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Characteristics of dual-wavelength vertical-cavitysurface-emitting lasers

Guan Bao-Lu Guo Xia Zhang Jing-Lan Ren Xiu-Juan Guo Shuai Li Shuo Chuai Dong-Xu Shen Guang-Di

Characteristics of dual-wavelength vertical-cavitysurface-emitting lasers

Guan Bao-Lu, Guo Xia, Zhang Jing-Lan, Ren Xiu-Juan, Guo Shuai, Li Shuo, Chuai Dong-Xu, Shen Guang-Di
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  • Received Date:  26 January 2010
  • Accepted Date:  24 March 2010
  • Published Online:  15 January 2011

Characteristics of dual-wavelength vertical-cavitysurface-emitting lasers

  • 1. Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China

Abstract: Based on asymmetric one-dimensional photonic crystal structure,a dual-wavelength vertical-cavity surface-emitting laser (VCSEL) with modified standing wave field distribution has been constructed. The defect layer is Al0.8Ga0.2As with 5λ/4 thickness. Specifically, the dual-wavelength output spectrum of the VCSEL has low absorption loss, easy wavelength adjustment and same output direction. In addition, the two wavelengths and their spacing could be tuned by changing the refractive index contrast of the asymmetric PC structure and the thickness of defect layer. Such dual-VCSEL structure can be applied in optical bistable switches, amplifiers, modulators and detectors, etc..

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