Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

The study of defects in Ga0.946Mn0.054As by X-ray absorption spectra

Qiao Yuan-Yuan Xiao Zheng-Guo Cao Xian-Cun Guo Hao-Min Shi Tong-Fei Wang Yu-Qi

The study of defects in Ga0.946Mn0.054As by X-ray absorption spectra

Qiao Yuan-Yuan, Xiao Zheng-Guo, Cao Xian-Cun, Guo Hao-Min, Shi Tong-Fei, Wang Yu-Qi
PDF
Get Citation
  • The influence of the major compensating defects As antisites (AsGa) and Mn interstitials (MnI) in the Ga0.946Mn0.054As diluted magnetic semiconductor (DMS) were studied by X-ray absorption spectra (XAS). The experimental results show that the defects in Ga0.946Mn0.054As grown at lower temperature (TS=200℃) is mainly AsGa, but at TS>230℃ MnI is the major defects. On the other hand, a higher LT-annealing temperature (250℃) can remove MnI out of the Ga0.946Mn0.054As lattice, and the highest Curie temperature (TC=130 K) is reached. Moreover, it is indicated that the LT-annealing process can increase the number of MnGa atoms by reducing the concentration of AsGa defects and driving MnI defects to fill up the holes left by AsGa.
    • Funds:
    [1]

    Ohno H, Shen A, Matsukura F, Oiwa A,Endo A,Kataumoto S, Iye Y 1996 Appl. Phys. Lett. 69 363

    [2]

    Dietl T 2008 J. Appl. Phys. 103 07D111-1

    [3]

    Ohno H 1998 Science 281 951

    [4]

    Valenzuela S O, Tinkham M, Tinkham M 2007 J. Appl. Phys. 101 09B103-1

    [5]

    Van’t Erve O M J, Hanbicki A T, Holub M, Li C H, Awo-Affouda C, Thompson P E, Jonker B T 2007 Appl. Phys. Lett. 91 212109-1

    [6]

    Nazmul Ahsan M, Sugahara S, Tanaka M 2003 Phys.Rev. B 67 241308-1

    [7]

    Ji C J, Cao X C, Han Q F, Qiu K, Zhong F, Li X H 2007 Appl. Phys. Lett. 90 232501

    [8]

    Ji C J, He H T, Cao X C, Qiu K, Zhong F, Li X H, Han Q F, Xu F Q, Wang J N, Wang Y Q 2007 Europhys. Lett. 78 57006

    [9]

    Luo X D, Ji C J, Wang Y Q, Wang J N 2008 Acta Phys. Sin. 57 5277 (in Chinese) [罗向东、姬长健、王玉琦、王建农 2008 物理学报 57 5277]

    [10]

    Liu X D, Wang W Z, Gao R X, Zhao J H, Wen J H, Lin W Z, Lai T S 2008 Acta Phys. Sin. 57 3857(in Chinese)[刘晓东、王玮竹、高瑞鑫、赵建华、文锦辉、 林位株、赖天树 2008 物理学报 57 3857]

    [11]

    Liu G B, Liu B G 2009 Chin. Phys. B 18 5047

    [12]

    Zhong Y J, Cheng S C, Su P,Gong M,Shi R Y, Cao X C, Shi T F 2009 The Journal of Light Scattering 21 3 (in Chinese) [钟玉杰、程顺昌、苏 平、龚 敏、石瑞英、曹先存、史同飞 2009 光散射学报 21 3]

    [13]

    He H C, Yang L, Ge W K, Wang J N, Dai X, Wang Y Q 2005 Appl. Phys. Lett. 87 162506

    [14]

    Sadowski J, Domagala J Z 2004 Phys.Rev. B 69 075206-1

    [15]

    Ankundinov A L, Ravel B, Rehr J J, Conradson S D 1998 Phys.Rev. B 58 7565

    [16]

    Yonamoto Y, Yokoyama T, Amemiya K, Matsumura D, Ohta T 2001 Phys.Rev. B 63 214406-1

    [17]

    Yu K M, Walukiewicz W, Wojtowicz T, Denlinger J 2005 Appl. Phys. Lett. 86 042102

  • [1]

    Ohno H, Shen A, Matsukura F, Oiwa A,Endo A,Kataumoto S, Iye Y 1996 Appl. Phys. Lett. 69 363

    [2]

    Dietl T 2008 J. Appl. Phys. 103 07D111-1

    [3]

    Ohno H 1998 Science 281 951

    [4]

    Valenzuela S O, Tinkham M, Tinkham M 2007 J. Appl. Phys. 101 09B103-1

    [5]

    Van’t Erve O M J, Hanbicki A T, Holub M, Li C H, Awo-Affouda C, Thompson P E, Jonker B T 2007 Appl. Phys. Lett. 91 212109-1

    [6]

    Nazmul Ahsan M, Sugahara S, Tanaka M 2003 Phys.Rev. B 67 241308-1

    [7]

    Ji C J, Cao X C, Han Q F, Qiu K, Zhong F, Li X H 2007 Appl. Phys. Lett. 90 232501

    [8]

    Ji C J, He H T, Cao X C, Qiu K, Zhong F, Li X H, Han Q F, Xu F Q, Wang J N, Wang Y Q 2007 Europhys. Lett. 78 57006

    [9]

    Luo X D, Ji C J, Wang Y Q, Wang J N 2008 Acta Phys. Sin. 57 5277 (in Chinese) [罗向东、姬长健、王玉琦、王建农 2008 物理学报 57 5277]

    [10]

    Liu X D, Wang W Z, Gao R X, Zhao J H, Wen J H, Lin W Z, Lai T S 2008 Acta Phys. Sin. 57 3857(in Chinese)[刘晓东、王玮竹、高瑞鑫、赵建华、文锦辉、 林位株、赖天树 2008 物理学报 57 3857]

    [11]

    Liu G B, Liu B G 2009 Chin. Phys. B 18 5047

    [12]

    Zhong Y J, Cheng S C, Su P,Gong M,Shi R Y, Cao X C, Shi T F 2009 The Journal of Light Scattering 21 3 (in Chinese) [钟玉杰、程顺昌、苏 平、龚 敏、石瑞英、曹先存、史同飞 2009 光散射学报 21 3]

    [13]

    He H C, Yang L, Ge W K, Wang J N, Dai X, Wang Y Q 2005 Appl. Phys. Lett. 87 162506

    [14]

    Sadowski J, Domagala J Z 2004 Phys.Rev. B 69 075206-1

    [15]

    Ankundinov A L, Ravel B, Rehr J J, Conradson S D 1998 Phys.Rev. B 58 7565

    [16]

    Yonamoto Y, Yokoyama T, Amemiya K, Matsumura D, Ohta T 2001 Phys.Rev. B 63 214406-1

    [17]

    Yu K M, Walukiewicz W, Wojtowicz T, Denlinger J 2005 Appl. Phys. Lett. 86 042102

  • [1] Yang Jia-Min, Ding Yao-Nan, Zheng Zhi-Jian, Wang Yao-Mei, Zhang Wen-Hai, Zhang Ji-Yan, Liu Jin-Yuan, San Bing, Gao Sheng-Chen, Ren You-Lai, Liu Xiu-Qin. Diagnostic technology of time-and space-resolved soft-x-ray spectra. Acta Physica Sinica, 2003, 52(6): 1427-1431. doi: 10.7498/aps.52.1427
    [2] Wang Rui-Rong, Wang Wei, Fang Zhi-Heng, An Hong-Hai, Jia Guo, Xie Zhi-Yong, Meng Xiang-Fu. Experimental studies on the opacity of dense aluminum compressed by a laser-driven shock waves. Acta Physica Sinica, 2013, 62(12): 125202. doi: 10.7498/aps.62.125202
    [3] Ji Yang, Zhao Jian-Hua, Yang Wei, Luo Hai-Hui, Ruan Xue-Zhong, Wang Wei-Zhu. Electronic noise of diluted magnetic semiconductor (Ga,Mn)As around Curie point. Acta Physica Sinica, 2009, 58(12): 8560-8565. doi: 10.7498/aps.58.8560
    [4] Zhu Meng-Yao, Lu Jun, Ma Jia-Lin, Li Li-Xia, Wang Hai-Long, Pan Dong, Zhao Jian-Hua. Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films. Acta Physica Sinica, 2015, 64(7): 077501. doi: 10.7498/aps.64.077501
    [5] Xu Da-Qing, Li Pei-Xian, Lou Yong-Le, Yue Gai-Li, Zhang Chao, Zhang Yan, Liu Ning-Zhuang, Yang Bo. Effects of vacancy defect and Mg substitution on electronic structure, magnetic and optical properties of wurtzite structure (Ga, Mn)N. Acta Physica Sinica, 2016, 65(19): 197501. doi: 10.7498/aps.65.197501
    [6] Li Hang, Zhang Xin-Hui. Analysis of fitting methods for laser-triggered ultrafast magnetization dynamics in diluted magnetic semiocnductor (Ga, Mn)As film. Acta Physica Sinica, 2015, 64(17): 177503. doi: 10.7498/aps.64.177503
    [7] Yu Zhou, Li Xiang, Long Xue, Cheng Xing-Wang, Liu Ying, Cao Mao-Sheng, Wang Fu-Chi, Wang Jing-Yun. Study of synthesis and magnetic properties of Mn-doped ZnO diluted magnetic semiconductors. Acta Physica Sinica, 2008, 57(7): 4539-4544. doi: 10.7498/aps.57.4539
    [8] Lu Zhong-Lin, Zou Wen-Qin, Wang Shen, Liu Yuan, Lu Lu, Li Li, Zhang Feng-Ming, Du You-Wei. Activation of room-temperature ferromagnetism in Mn doped ZnO thin films by N codoping. Acta Physica Sinica, 2009, 58(8): 5763-5767. doi: 10.7498/aps.58.5763
    [9] Wang Shi-Wei, Zhu Ming-Yuan,  Zhong Min, Liu Cong, Li Ying, Hu Ye-Min, Jin Hong-Ming. Effects of pulsed magnetic field on Mn-doped ZnO diluted magnetic semiconductor prepared by hydrothermal method. Acta Physica Sinica, 2012, 61(19): 198103. doi: 10.7498/aps.61.198103
    [10] Wang Ai-Ling, Wu Zhi-Min, Wang Cong, Hu Ai-Yuan, Zhao Ruo-Yu. First-priciples study on Mn-doped LiZnAs, a new diluted magnetic semiconductor. Acta Physica Sinica, 2013, 62(13): 137101. doi: 10.7498/aps.62.137101
  • Citation:
Metrics
  • Abstract views:  3815
  • PDF Downloads:  800
  • Cited By: 0
Publishing process
  • Received Date:  04 March 2010
  • Accepted Date:  12 April 2010
  • Published Online:  15 January 2011

The study of defects in Ga0.946Mn0.054As by X-ray absorption spectra

  • 1. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences,Hefei 230031,China

Abstract: The influence of the major compensating defects As antisites (AsGa) and Mn interstitials (MnI) in the Ga0.946Mn0.054As diluted magnetic semiconductor (DMS) were studied by X-ray absorption spectra (XAS). The experimental results show that the defects in Ga0.946Mn0.054As grown at lower temperature (TS=200℃) is mainly AsGa, but at TS>230℃ MnI is the major defects. On the other hand, a higher LT-annealing temperature (250℃) can remove MnI out of the Ga0.946Mn0.054As lattice, and the highest Curie temperature (TC=130 K) is reached. Moreover, it is indicated that the LT-annealing process can increase the number of MnGa atoms by reducing the concentration of AsGa defects and driving MnI defects to fill up the holes left by AsGa.

Reference (17)

Catalog

    /

    返回文章
    返回