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Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors

Mao Wei Hao Yue Zhang Jin-Cheng Liu Hong-Xia Wang Chong Zhang Jin-Feng Yang Lin-An Xu Sheng-Rui Bi Zhi-Wei Zhou Zhou Yang Ling Wang Hao Yang Cui Ma Xiao-Hua

Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors

Mao Wei, Hao Yue, Zhang Jin-Cheng, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua
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  • Received Date:  03 July 2010
  • Accepted Date:  10 August 2010
  • Published Online:  15 January 2011

Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors

  • 1. (1)School of Microelectronics, Xidian University, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China; (2)School of Technical Physics, Xidian University, Xi'an 710071, China

Abstract: The physical mechanisms underlying current collapse effects in the passivated GaN high-electron mobility transistors(HEMTs), the gate field-plated GaN HEMTs and the gate-source field-plated GaN HEMTs are investigated in experiments and numerical device simulations. And the intrinsic relationships of the current collapse with the carrier concentration, the probability of traps ionization, and the electric field within the cap layer are established. Results show that the direction of the longitudinal electric field, as well as the intensity distribution of both the transverse and longitudinal electric fields within the cap layer, can be modulated effectively by the field-plates. The electric field intensity near the gate is reduced and that beneath the field-plates increased. Due to the effects of the field-plates on electric field, the transverse movement of electrons near the gate is reduced, and the longitudinal electron movement beneath the field-plates is increased. These affects the electron concentration distribution and the ionization probability of the traps in the cap layer, which makes field-plates effective for the reduction in the current collapse.

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