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Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer

Hu Hui-Yong Shu Yu Zhang He-Ming Song Jian-Jun Xuan Rong-Xi Qing Shan-Shan Qu Jiang-Tao

Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer

Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao
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  • By solving Poisson equation, models of voltage and electric field distribution are build respectively in collector junction depletion layer of SiGe HBT (heterojunction bipolar transistor) with intrinsic SiGe layer. On this basis, models of the collector junction depletion layer width and delay time are obtained. Applying MATLAB, the impact of physical and electrical parameters on SiGe HBT collector junction depletion layer width and depletion delay time are quantitatively analyzed. When base doping concentration and collector junction reverse bias are large, the depletion delay time is quite long. But, when base doping external diffusion depth and collector region doping are large, the depletion delay time is quite short.
    • Funds:
    [1]

    Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918(in Chinese)[宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 5918]

    [2]

    Hu H Y, Zhang H M, Lv Y, Dai X Y, Hou H, Ou J F, Wang W, Wang X Y 2006 Acta Phys. Sin. 55 403 (in Chinese)[胡辉勇、张鹤鸣、吕 懿、戴显英、侯 慧、区健锋、王 伟、王喜媛 2006 物理学报 55 403]

    [3]

    Lv Y, Zhang H M, Dai X Y, Hu H Y, Shu B 2004 Acta Phys. Sin. 53 3239 (in Chinese) [吕 懿、张鹤鸣、戴显英、胡辉勇、舒 斌 2004 物理学报 53 3239]

    [4]

    Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 7947(in Chinese)[宋建军、张鹤鸣、胡辉勇、宣荣喜、戴显英 2009 物理学报 58 7947]

    [5]

    Kondo M, Oda K, Ohue E, Shimamoto H, Tanabe M, Onai T, Washio K 1998 IEEE Trans. on Electron Devices 45 1287

    [6]

    Gruhle A, Kibbel H, Mhner C, Mroczek W 1999 IEEE Trans. on Electron Devices 46 1510

    [7]

    Rieh J S, Lu L H, Ma Z Q, Liu X F, Katehi L P B, Bhattacharya P 1999 IEEE Microwave Theory and Techniques Society (MTT-S) International Microwave Symposium 1999, Anaheim, CA, USA, June 13—19, 1999, p1191

    [8]

    Ma Z, Mohammadi S, Bhattacharya P, Katehi L P B, Alterovitz S A, Ponchak G E IEEE Electronics Letters 37 790

    [9]

    Hu H Y, Zhang H M, Dai X Y, Li K C, Wang W, Zhu Y G, Wang S X, Cui X Y, Wang X Y 2005 Chinese Journal of Semiconductors 26 641

    [10]

    Hu H Y, Zhang H M, Dai X Y, Xuan R X, Cui X Y,Wang Q, Jiang T 2006 Chinese Journal of Semiconductors 27 1059(in Chinese)[胡辉勇、张鹤鸣、戴显英、宣荣喜、崔晓英、王 青、姜 涛 2006 半导体学报 27 1059]

    [11]

    Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. on Electron Devices 51 2069

    [12]

    Patton G L Comfort J H Meyerson B S 1990 IEEE Device Lett. 11 171

  • [1]

    Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918(in Chinese)[宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 5918]

    [2]

    Hu H Y, Zhang H M, Lv Y, Dai X Y, Hou H, Ou J F, Wang W, Wang X Y 2006 Acta Phys. Sin. 55 403 (in Chinese)[胡辉勇、张鹤鸣、吕 懿、戴显英、侯 慧、区健锋、王 伟、王喜媛 2006 物理学报 55 403]

    [3]

    Lv Y, Zhang H M, Dai X Y, Hu H Y, Shu B 2004 Acta Phys. Sin. 53 3239 (in Chinese) [吕 懿、张鹤鸣、戴显英、胡辉勇、舒 斌 2004 物理学报 53 3239]

    [4]

    Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 7947(in Chinese)[宋建军、张鹤鸣、胡辉勇、宣荣喜、戴显英 2009 物理学报 58 7947]

    [5]

    Kondo M, Oda K, Ohue E, Shimamoto H, Tanabe M, Onai T, Washio K 1998 IEEE Trans. on Electron Devices 45 1287

    [6]

    Gruhle A, Kibbel H, Mhner C, Mroczek W 1999 IEEE Trans. on Electron Devices 46 1510

    [7]

    Rieh J S, Lu L H, Ma Z Q, Liu X F, Katehi L P B, Bhattacharya P 1999 IEEE Microwave Theory and Techniques Society (MTT-S) International Microwave Symposium 1999, Anaheim, CA, USA, June 13—19, 1999, p1191

    [8]

    Ma Z, Mohammadi S, Bhattacharya P, Katehi L P B, Alterovitz S A, Ponchak G E IEEE Electronics Letters 37 790

    [9]

    Hu H Y, Zhang H M, Dai X Y, Li K C, Wang W, Zhu Y G, Wang S X, Cui X Y, Wang X Y 2005 Chinese Journal of Semiconductors 26 641

    [10]

    Hu H Y, Zhang H M, Dai X Y, Xuan R X, Cui X Y,Wang Q, Jiang T 2006 Chinese Journal of Semiconductors 27 1059(in Chinese)[胡辉勇、张鹤鸣、戴显英、宣荣喜、崔晓英、王 青、姜 涛 2006 半导体学报 27 1059]

    [11]

    Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. on Electron Devices 51 2069

    [12]

    Patton G L Comfort J H Meyerson B S 1990 IEEE Device Lett. 11 171

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    [6] Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun. Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2011, 60(4): 044402. doi: 10.7498/aps.60.044402
    [7] Zhang Shu-Qing, Li Xin-Xin, Zhang Li-Guo, Hu Yong-Tao, Li Liang. Delay time obtaining method using the maximum joint entroy on the basis of symbolic analysis. Acta Physica Sinica, 2013, 62(11): 110506. doi: 10.7498/aps.62.110506
    [8] Liu Ling-Yu, Tian Hui-Ping, Ji Yue-Feng. Soliton pulse propagation and optical delay properties in photonic crystal waveguide. Acta Physica Sinica, 2011, 60(10): 104216. doi: 10.7498/aps.60.104216
    [9] Lü Zhi-Wei, He Wei-Ming, Dong Yong-Kang, Gao Wei. High-gain amplification of weak Stokes signal of stimulated Brillouin scattering in water. Acta Physica Sinica, 2008, 57(4): 2248-2252. doi: 10.7498/aps.57.2248
    [10] Gao Wei, Lü Zhi-Wei, He Wei-Ming. Optimal working point of a Brillouin amplifier for a weak input signal in the transient regime. Acta Physica Sinica, 2012, 61(20): 204204. doi: 10.7498/aps.61.204204
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  • Received Date:  13 January 2010
  • Accepted Date:  21 April 2010
  • Published Online:  15 January 2011

Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer

  • 1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071,China

Abstract: By solving Poisson equation, models of voltage and electric field distribution are build respectively in collector junction depletion layer of SiGe HBT (heterojunction bipolar transistor) with intrinsic SiGe layer. On this basis, models of the collector junction depletion layer width and delay time are obtained. Applying MATLAB, the impact of physical and electrical parameters on SiGe HBT collector junction depletion layer width and depletion delay time are quantitatively analyzed. When base doping concentration and collector junction reverse bias are large, the depletion delay time is quite long. But, when base doping external diffusion depth and collector region doping are large, the depletion delay time is quite short.

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