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Spatiotemporal dynamics of photogenerated carriers in GaAs/AlGaAs multiple quantum wells

Ye Hui-Qi Wang Gang Liu Bao-Li Hu Chang-Cheng

Spatiotemporal dynamics of photogenerated carriers in GaAs/AlGaAs multiple quantum wells

Ye Hui-Qi, Wang Gang, Liu Bao-Li, Hu Chang-Cheng
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  • Received Date:  29 March 2009
  • Accepted Date:  07 May 2010
  • Published Online:  15 January 2011

Spatiotemporal dynamics of photogenerated carriers in GaAs/AlGaAs multiple quantum wells

  • 1. (1)Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China; (2)College of Physics,Jilin University,Changchun 130021,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

Abstract: The ambipolar diffusion coefficient of (110) GaAs/AlGaAs multiple quantum wells was measured by the transient spin grating technique.The ambipolar diffusion coefficient and carrier life time,which are Da=13.0 cm2/s and τR=1.9 ns,were obtained directly by this technique under carrier concentration nex=3.4×1010/cm2 at room temperature.The measured Da keeps almost a constant value when the photoexcited carrier concentration is increased up to 1.2×1011/cm2.

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