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Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer

Wang Chong Yang Yu Yang Rui-Dong Li Liang Wei Dong Jin Ying-Xia Bao Ji-Ming

Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer

Wang Chong, Yang Yu, Yang Rui-Dong, Li Liang, Wei Dong, Jin Ying-Xia, Bao Ji-Ming
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  • Received Date:  23 October 2010
  • Accepted Date:  03 February 2011
  • Published Online:  05 May 2011

Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer

  • 1. Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091;
  • 2. Department of Electrical and Computer Engineering, University of Houston, Houston, Texas 77204, USA

Abstract: The Si+ self-ion-implanted and annealing experiments are conducted on the Si film based on the silicon-on-insulator wafers. The photoluminescence (PL) spectroscopy is used to investigate the luminescence properties of these Si film samples. Plentiful optical structures are observed in the PL spectra, including the D1, D2, D3, X, and the sharp W lines. By comparing the normalized PL intensities recorded by the same spectral experiments, we obtain the optimum self-ion-implanted and thermal annealing parameters. In addition, the defect origins and optical properties of the series of the D peaks and W line are well discussed.

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