Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors

Wang Xin-Hua Zhao Miao Liu Xin-Yu Pu Yan Zheng Ying-Kui Wei Ke

The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors

Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke
PDF
Get Citation
  • This paper expresses the experiential relationship between Fermi level and the density of two-dimensional electron gas, based on the capacitance voltage (C-V) characteristics of the AlGaN/AlN/GaN high electron mobility transistor (HEMT) on sapphire substrate. The expression provides important references for establishing the device charge control model and simpliying the transconductance and capacitance. Parameter α is introduced for describing the ability for the two-dimensional potential well to restrict electrons, and we believe that the smaller the value of α, the stronger the restricting ability is. A coherent fitting effect, compared with the measurement, is obtained by making use of the experiential relationship said above.
    • Funds:
    [1]

    Jimenez J L, Chowdhury U 2008 IEEE 46th Annual International Reliability Physics Symposium Phoenix, USA, APR 27-MAY 01, 2008 p429

    [2]

    Guo L, Wang X, Wang C, Xiao H, Ran J, Luo W, Wang X, Wang B, Fang C, Hu G 2008 Microelectronics Journal 39 777

    [3]

    Lisesivdin S B, Balkan N, Makarovsky O, Patane A, Yildiz A, Caliskan M D, Kasap M, Ozcelik S, Ozbay E 2009 Journal of Applied Physics 105 6

    [4]

    Qian F, Leach J H, Jinqiao X, Ozgur U, Morkoc H, Zhou L, Smith D J 2009 Proceedings of the International Society for Optical Engineering San Jose, USA, January 26—29, 2009 p14

    [5]

    Kumar S P, Agrawal A, Kabra S, Gupta M, Gupta R S 2006 Microelectronics Journal 37 1339

    [6]

    Farahmand M, Garetto C, Bellotti E, Brennan K F, Goano M, Ghillino E, Ghione G, Albrecht J D and Ruden P P 2001 IEEE Transactions on Electron Devices 48 535

    [7]

    Parvesh G, Sujata P, Subhasis H, Mridula G, Gupta R S 2007 Microelectron. J. 38 848

    [8]

    Liu J, Hao Y, Feng Q, Wang C, Zhang J C, Guo L L 2007 Acta Phys. Sin. 56 3483 (in Chinese) [刘 杰、郝 跃、冯 倩、王 冲、张进城、郭亮良 2008 物理学报 56 3483]

    [9]

    Zhang J F, Wang C, Zhang J C, Hao Y 2006 Chin. Phys. 15 1060

    [10]

    Zhang J F, Zhang J C, Hao Y 2004 Chin. Phys. 13 1334

    [11]

    Wang X H, Zhao M, Liu X Y, Pu Y, Zheng Y K, Wei K 2010 Chin. Phys. B 19 097302

    [12]

    Delagebeaudeuf D, Linh N T 1982 IEEE Transactions on Electron Devices 29 955

    [13]

    Aziz M A, El-Banna M 1996 Thirteenth National Radio Science Conference Cairo, Egypt, March 19—21,1996 p547

    [14]

    Frank S, Sankar D S 1984 Phys. Rev. B 30 840

    [15]

    Norris G B, Look D C, Kopp W, Klem J, Morkoc H 1985 Appl. Phys. Lett. 47 423

    [16]

    Kwangman P, Hong Bae K, Kae Dal K 1987 IEEE Transactions on Electron Devices 34 2422

    [17]

    Cazaux J L, Ng G I, Pavlidis D, Chau H F 1988 IEEE Transactions on Electron Devices 35 1223

    [18]

    Ando Y, Itoh T 1988 IEEE Transactions on Electron Devices 35 2295

    [19]

    Shey A J, Ku W H 1988 IEEE Electron Device Letters 9 624

    [20]

    Kokorev M F, Maleev N A 1996 Solid-State Electronics 39 297

    [21]

    Liu W L, Chen Y L, Balandin A A, Wang K L 2006 Journal of Nanoelectronics and Optoelectronics 1 258

    [22]

    Moloney M J, Ponse F, Morkoc H 1985 IEEE Transactions on Electron Devices 32 1675

    [23]

    Karmalkar S 1997 IEEE Transactions on Electron Devices 44 862

    [24]

    Ketterson A A, Morkoc H 1986 IEEE Transactions on Electron Devices 33 1626

    [25]

    Anwar A F M, Liu K W 1993 IEEE Transactions on Electron Devices 40 1174

    [26]

    Ando Y, Itoh T 1990 IEEE Transactions on Electron Devices 37 67

    [27]

    Tong K Y 1991 Electronics Letters 27 668

    [28]

    Miller E J, Dang X Z, Wieder H H, Asbeck P M, Yu E T, Sullivan G J, Redwing J M 2000 Journal of Applied Physics 87 8070

    [29]

    Khondker A N, Anwar A F M, Islam M A, Limoncelli L, Wilson D 1986 IEEE Transactions on Electron Devices 33 1825

  • [1]

    Jimenez J L, Chowdhury U 2008 IEEE 46th Annual International Reliability Physics Symposium Phoenix, USA, APR 27-MAY 01, 2008 p429

    [2]

    Guo L, Wang X, Wang C, Xiao H, Ran J, Luo W, Wang X, Wang B, Fang C, Hu G 2008 Microelectronics Journal 39 777

    [3]

    Lisesivdin S B, Balkan N, Makarovsky O, Patane A, Yildiz A, Caliskan M D, Kasap M, Ozcelik S, Ozbay E 2009 Journal of Applied Physics 105 6

    [4]

    Qian F, Leach J H, Jinqiao X, Ozgur U, Morkoc H, Zhou L, Smith D J 2009 Proceedings of the International Society for Optical Engineering San Jose, USA, January 26—29, 2009 p14

    [5]

    Kumar S P, Agrawal A, Kabra S, Gupta M, Gupta R S 2006 Microelectronics Journal 37 1339

    [6]

    Farahmand M, Garetto C, Bellotti E, Brennan K F, Goano M, Ghillino E, Ghione G, Albrecht J D and Ruden P P 2001 IEEE Transactions on Electron Devices 48 535

    [7]

    Parvesh G, Sujata P, Subhasis H, Mridula G, Gupta R S 2007 Microelectron. J. 38 848

    [8]

    Liu J, Hao Y, Feng Q, Wang C, Zhang J C, Guo L L 2007 Acta Phys. Sin. 56 3483 (in Chinese) [刘 杰、郝 跃、冯 倩、王 冲、张进城、郭亮良 2008 物理学报 56 3483]

    [9]

    Zhang J F, Wang C, Zhang J C, Hao Y 2006 Chin. Phys. 15 1060

    [10]

    Zhang J F, Zhang J C, Hao Y 2004 Chin. Phys. 13 1334

    [11]

    Wang X H, Zhao M, Liu X Y, Pu Y, Zheng Y K, Wei K 2010 Chin. Phys. B 19 097302

    [12]

    Delagebeaudeuf D, Linh N T 1982 IEEE Transactions on Electron Devices 29 955

    [13]

    Aziz M A, El-Banna M 1996 Thirteenth National Radio Science Conference Cairo, Egypt, March 19—21,1996 p547

    [14]

    Frank S, Sankar D S 1984 Phys. Rev. B 30 840

    [15]

    Norris G B, Look D C, Kopp W, Klem J, Morkoc H 1985 Appl. Phys. Lett. 47 423

    [16]

    Kwangman P, Hong Bae K, Kae Dal K 1987 IEEE Transactions on Electron Devices 34 2422

    [17]

    Cazaux J L, Ng G I, Pavlidis D, Chau H F 1988 IEEE Transactions on Electron Devices 35 1223

    [18]

    Ando Y, Itoh T 1988 IEEE Transactions on Electron Devices 35 2295

    [19]

    Shey A J, Ku W H 1988 IEEE Electron Device Letters 9 624

    [20]

    Kokorev M F, Maleev N A 1996 Solid-State Electronics 39 297

    [21]

    Liu W L, Chen Y L, Balandin A A, Wang K L 2006 Journal of Nanoelectronics and Optoelectronics 1 258

    [22]

    Moloney M J, Ponse F, Morkoc H 1985 IEEE Transactions on Electron Devices 32 1675

    [23]

    Karmalkar S 1997 IEEE Transactions on Electron Devices 44 862

    [24]

    Ketterson A A, Morkoc H 1986 IEEE Transactions on Electron Devices 33 1626

    [25]

    Anwar A F M, Liu K W 1993 IEEE Transactions on Electron Devices 40 1174

    [26]

    Ando Y, Itoh T 1990 IEEE Transactions on Electron Devices 37 67

    [27]

    Tong K Y 1991 Electronics Letters 27 668

    [28]

    Miller E J, Dang X Z, Wieder H H, Asbeck P M, Yu E T, Sullivan G J, Redwing J M 2000 Journal of Applied Physics 87 8070

    [29]

    Khondker A N, Anwar A F M, Islam M A, Limoncelli L, Wilson D 1986 IEEE Transactions on Electron Devices 33 1825

  • [1] Fan Long, Hao Yue. The effect of radiation induced strain relaxation on electric performance of AlmGa1-mN/GaN HEMT. Acta Physica Sinica, 2007, 56(6): 3393-3399. doi: 10.7498/aps.56.3393
    [2] Li Dong-Lin, Zeng Yi-Ping. Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors. Acta Physica Sinica, 2006, 55(7): 3677-3682. doi: 10.7498/aps.55.3677
    [3] The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20191931
    [4] Wang Xin-Hua, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Zheng Ying-Kui, Wei Ke, Liu Xin-Yu. Investigation on trap by the gate fringecapacitance in GaN HEMT. Acta Physica Sinica, 2011, 60(9): 097101. doi: 10.7498/aps.60.097101
    [5] Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan. Study of high breakdown-voltage AlGaN/GaN FP-HEMT. Acta Physica Sinica, 2007, 56(5): 2895-2899. doi: 10.7498/aps.56.2895
    [6] Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen. Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation. Acta Physica Sinica, 2012, 61(22): 227302. doi: 10.7498/aps.61.227302
    [7] WANG HONG, WANG DONG, WANG MIN, LU WEI, SHEN XUE-CHU, WANG SHAO-WEI. C-V CHARACTERISTICS OF Bi2Ti2O7 THIN FILMS ON n-Si(100). Acta Physica Sinica, 2001, 50(12): 2461-2465. doi: 10.7498/aps.50.2461
    [8] Wang Hua. Studies on the preparation and characterization of Bi4Ti3O12 thin films on p-Si substrates. Acta Physica Sinica, 2004, 53(4): 1265-1270. doi: 10.7498/aps.53.1265
    [9] Liu Hong, Yin Hai-Jian, Xia Shu-Ning. Electrical properties of the deformed carbon nanotube field-effect transistors. Acta Physica Sinica, 2009, 58(12): 8489-8500. doi: 10.7498/aps.58.8489
    [10] WANG REN-ZHI, ZHENG YONG-MEI, LI SHU-PING. STUDY ON PHYSICAL CONNOTATION OF AVERAGE BOND ENERGY Em. Acta Physica Sinica, 2001, 50(2): 273-277. doi: 10.7498/aps.50.273
  • Citation:
Metrics
  • Abstract views:  3562
  • PDF Downloads:  803
  • Cited By: 0
Publishing process
  • Received Date:  22 June 2010
  • Accepted Date:  19 July 2010
  • Published Online:  15 April 2011

The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors

  • 1. Key Laboratory of Microelectronics Device & Integrated Technology, Institute of microelectronicsof Chinese Academy of Sciences, Beijing 100029, China

Abstract: This paper expresses the experiential relationship between Fermi level and the density of two-dimensional electron gas, based on the capacitance voltage (C-V) characteristics of the AlGaN/AlN/GaN high electron mobility transistor (HEMT) on sapphire substrate. The expression provides important references for establishing the device charge control model and simpliying the transconductance and capacitance. Parameter α is introduced for describing the ability for the two-dimensional potential well to restrict electrons, and we believe that the smaller the value of α, the stronger the restricting ability is. A coherent fitting effect, compared with the measurement, is obtained by making use of the experiential relationship said above.

Reference (29)

Catalog

    /

    返回文章
    返回