Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Frist principles study of effect of high Al doping concentrationof p-type ZnO on electric conductivity performance

Hou Qing-Yu Zao Chun-Wang Li Ji-Jun Wang Gang

Frist principles study of effect of high Al doping concentrationof p-type ZnO on electric conductivity performance

Hou Qing-Yu, Zao Chun-Wang, Li Ji-Jun, Wang Gang
PDF
Get Citation
Metrics
  • Abstract views:  3859
  • PDF Downloads:  931
  • Cited By: 0
Publishing process
  • Received Date:  27 April 2010
  • Accepted Date:  16 July 2010
  • Published Online:  15 April 2011

Frist principles study of effect of high Al doping concentrationof p-type ZnO on electric conductivity performance

  • 1. College of Sciences, Inner Mongolia University of Technology, Hohhot 010051, China

Abstract: We optimize the geometric structure and calculate total densities of states, band structures, the relative number of electrons and mobility ratios of electrons of ZnO mode established at different concentrations of Al, in the condition of high concentration of Al heavily doped ZnO semiconductor at low temperature, by adopting the ab-initio study of plane wave ultra-soft pseudo potential technique based on the density function theory (DFT). It is found that the relative number of electrons increases, but the mobility ratio of electrons of ZnO decreases, with the concentration of Al increasing. On the contrary, the lower the Al doping concentration, the stronger the conductivity of ZnOis. The conductivity is compared. We can draw a conclusion that the conductivity of ZnO semiconductor decreases with Al doping concentration increasing. The calculation results are consistent with the change trend of experiments with Al concentrations exceeding o.z, i.e., x≥0.02.

Reference (21)

Catalog

    /

    返回文章
    返回