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Competition between band filling effect and band-gap renormalization effect in GaAs

Teng Li-Hua Wang Xia Lai Tian-Shu

Competition between band filling effect and band-gap renormalization effect in GaAs

Teng Li-Hua, Wang Xia, Lai Tian-Shu
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  • Time-resolved linearly polarized pump-probe spectroscopy is used to investigate carrier relaxation dynamics in instrinsic GaAs. Absorption saturation and absorption enhancement are observed. It is found that the absorption saturation can be observed obviously when the photon energy is smaller than 1.549eV, otherwise, the absorption enhancement can be observed at a carrier density of 2×1017 cm-3. When the carrier density is above 7×1016 cm-3, the absorption enhancement increases rather than decreases with delay time. The simulation results with consideration of the competition between band filling effect and band-gap renormalization effect are in good agreement with our experimental results. With the band filling effect and band-gap renormalization effect considered, we develop a new analytical model to retrieve the carrier lifetime.
    • Funds:
    [1]

    Jiang Z, Zhang X L, Huang D X 2006 Acta Phys. Sin. 55 3196 (in Chinese) [蒋 中、张新亮、黄徳修 2006 物理学报 55 3196]

    [2]

    Hunsche S, Heesel H, Ewertz A, Kurz H 1993 Phys. Rev. B 48 17818

    [3]

    Leitenstorfer A, Fürst C, Laubereau A, Kaiser W, Trnkle G, Weimann G 1996 Phys. Rev. Lett. 76 1545

    [4]

    Lin W Z, Fujimoto L G, Ippen E P 1987 Appl. Phys. Lett. 50 124

    [5]

    Lin W Z, Schoenlein R W, Fujimoto J G 1988 IEEE Journal of Quantum Electronics 24 267

    [6]

    Rosenwaks Y, Hanna M C, Levi D H, Szmyd D M, Ahrenkiel R K, Nozik A J 1993 Phys. Rev. B 48 675

    [7]

    Fatti N D, Langot P, Tommasi R, vallée F 1999 Phys. Rev. B 59 4576

    [8]

    Guo B, Wen J H, Zhang H C, Liao R, Lai T S, Lin W Z 2001 J. Infrared Millim. Waves. 20 179 (in Chinese) [郭 冰、文锦辉、张海朝、廖 睿、赖天树、林位株 2001 红外与毫米波学报 20 179]

    [9]

    Bennett B R, Soref R A, Alamo J A D 1990 IEEE Journal of Quantum Electronics 26 113

    [10]

    Prabhu S S, Vengurlekar A S 2004 J. Appl. Phys. 95 7803

    [11]

    Trnkle G, Lach E, Forchel A, Scholz F, Ell C, Haug H, Weimann G, Griffiths G, Kroemer, Subbanna S 1987 Phys. Rev. B 36 6712

    [12]

    Güven K, Tanatar B 1996 Superlatt. Microstruct 20 81

    [13]

    Juodawlkis P W, Ralph S E 2000 Appl. Phys. Lett. 76 1722

    [14]

    Nagai T, Inagaki T J, Kanemitsu Y 2004 Appl. Phys. Lett. 84 1284

    [15]

    Zhang Y, Sarma S D 2005 Phys. Rev. B 72 125303

    [16]

    Collet J H, Hunsche S, Heesel H, Kurz H 1994 Phys. Rev. B 50 10649

    [17]

    Stanton C J, Bailey D W 1993 Phys. Rev. B 47 1624

    [18]

    Ganikhanov F, Burr K C, Hilton D J, Tang C L 1999 Phys. Rev. B 60 8890

    [19]

    Henriques A B, Obukhov S, Goncalves L C D, Souza P L, Yavich B 1997 phys. Stat. sol. (a) 164 133

    [20]

    Trnkle G, Leier H, Forchel A 1987 Phys. Rev. Lett. 58 419

    [21]

    Nagai T, Inagaki T J, Kanemitsu Y 2004 Appl. Phys. Lett. 84 1284

    [22]

    Langot P, Tommasi R, vallée F 1996 Phys. Rev. B 54 1775

    [23]

    Ortiz V, Nagle J, Alexandrou A 2002 Appl. Phys. Lett. 80 2505

    [24]

    Lai T S, Teng L H, Jiao Z X, Xu H H, Lei L, Wen J H, Lin W Z 2007 Appl. Phys. Lett. 91 062110

    [25]

    Ahrenkiel R K, Lundstrom M S 1993 Minority Carries in Ⅲ-Ⅴ Semiconductors: Physics and Applications(New York: Academic) p274

    [26]

    Xu Z Y, Tang C L 1984 Appl. Phys. Lett. 44 69

  • [1]

    Jiang Z, Zhang X L, Huang D X 2006 Acta Phys. Sin. 55 3196 (in Chinese) [蒋 中、张新亮、黄徳修 2006 物理学报 55 3196]

    [2]

    Hunsche S, Heesel H, Ewertz A, Kurz H 1993 Phys. Rev. B 48 17818

    [3]

    Leitenstorfer A, Fürst C, Laubereau A, Kaiser W, Trnkle G, Weimann G 1996 Phys. Rev. Lett. 76 1545

    [4]

    Lin W Z, Fujimoto L G, Ippen E P 1987 Appl. Phys. Lett. 50 124

    [5]

    Lin W Z, Schoenlein R W, Fujimoto J G 1988 IEEE Journal of Quantum Electronics 24 267

    [6]

    Rosenwaks Y, Hanna M C, Levi D H, Szmyd D M, Ahrenkiel R K, Nozik A J 1993 Phys. Rev. B 48 675

    [7]

    Fatti N D, Langot P, Tommasi R, vallée F 1999 Phys. Rev. B 59 4576

    [8]

    Guo B, Wen J H, Zhang H C, Liao R, Lai T S, Lin W Z 2001 J. Infrared Millim. Waves. 20 179 (in Chinese) [郭 冰、文锦辉、张海朝、廖 睿、赖天树、林位株 2001 红外与毫米波学报 20 179]

    [9]

    Bennett B R, Soref R A, Alamo J A D 1990 IEEE Journal of Quantum Electronics 26 113

    [10]

    Prabhu S S, Vengurlekar A S 2004 J. Appl. Phys. 95 7803

    [11]

    Trnkle G, Lach E, Forchel A, Scholz F, Ell C, Haug H, Weimann G, Griffiths G, Kroemer, Subbanna S 1987 Phys. Rev. B 36 6712

    [12]

    Güven K, Tanatar B 1996 Superlatt. Microstruct 20 81

    [13]

    Juodawlkis P W, Ralph S E 2000 Appl. Phys. Lett. 76 1722

    [14]

    Nagai T, Inagaki T J, Kanemitsu Y 2004 Appl. Phys. Lett. 84 1284

    [15]

    Zhang Y, Sarma S D 2005 Phys. Rev. B 72 125303

    [16]

    Collet J H, Hunsche S, Heesel H, Kurz H 1994 Phys. Rev. B 50 10649

    [17]

    Stanton C J, Bailey D W 1993 Phys. Rev. B 47 1624

    [18]

    Ganikhanov F, Burr K C, Hilton D J, Tang C L 1999 Phys. Rev. B 60 8890

    [19]

    Henriques A B, Obukhov S, Goncalves L C D, Souza P L, Yavich B 1997 phys. Stat. sol. (a) 164 133

    [20]

    Trnkle G, Leier H, Forchel A 1987 Phys. Rev. Lett. 58 419

    [21]

    Nagai T, Inagaki T J, Kanemitsu Y 2004 Appl. Phys. Lett. 84 1284

    [22]

    Langot P, Tommasi R, vallée F 1996 Phys. Rev. B 54 1775

    [23]

    Ortiz V, Nagle J, Alexandrou A 2002 Appl. Phys. Lett. 80 2505

    [24]

    Lai T S, Teng L H, Jiao Z X, Xu H H, Lei L, Wen J H, Lin W Z 2007 Appl. Phys. Lett. 91 062110

    [25]

    Ahrenkiel R K, Lundstrom M S 1993 Minority Carries in Ⅲ-Ⅴ Semiconductors: Physics and Applications(New York: Academic) p274

    [26]

    Xu Z Y, Tang C L 1984 Appl. Phys. Lett. 44 69

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  • Received Date:  11 January 2010
  • Accepted Date:  20 July 2010
  • Published Online:  15 April 2011

Competition between band filling effect and band-gap renormalization effect in GaAs

  • 1. (1)School of Mathematics and physics, Qingdao University of Scienced and Technology, Qingdao 266061 China; (2)State Key laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

Abstract: Time-resolved linearly polarized pump-probe spectroscopy is used to investigate carrier relaxation dynamics in instrinsic GaAs. Absorption saturation and absorption enhancement are observed. It is found that the absorption saturation can be observed obviously when the photon energy is smaller than 1.549eV, otherwise, the absorption enhancement can be observed at a carrier density of 2×1017 cm-3. When the carrier density is above 7×1016 cm-3, the absorption enhancement increases rather than decreases with delay time. The simulation results with consideration of the competition between band filling effect and band-gap renormalization effect are in good agreement with our experimental results. With the band filling effect and band-gap renormalization effect considered, we develop a new analytical model to retrieve the carrier lifetime.

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