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Evolution of Ge/Si quantum dots self-assembledgrown by ion beam sputtering

Zhang Xue-Gui Wang Chong Lu Zhi-Quan Yang Jie Li Liang Yang Yu

Evolution of Ge/Si quantum dots self-assembledgrown by ion beam sputtering

Zhang Xue-Gui, Wang Chong, Lu Zhi-Quan, Yang Jie, Li Liang, Yang Yu
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  • A series of Ge quantum dot samples with different Ge thickness is grown on n-Si(100) substrates by ion beam sputtering. Their morphology and structure are characterizated using AFM and Raman spectra, in which the evolution of the morphology, density, dimension, crystalline, and composition of the Ge quantum dots are discussed in detail. The results show that after the growth mode transiting from 2-D to 3-D, the shape of the Ge quantum dot changes directly into a dome shape and no pyramid dots are observed. Besides, with the increase of the Ge deposition, the density of the quantum dots increases to a maximum and then decreases, the crystalline becomes better, but the Ge/Si alloying processing is enhanced and the Ge composition decreases in quantum dots at the same time.
    • Funds:
    [1]

    Zhao L X, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2010 Acta Phys. Sin. 59 6545 (in Chinese) [赵丽霞、张鹤鸣、胡辉勇、宣荣喜、戴显英 2010 物理学报 59 6545]

    [2]

    Zhang H H, Zhang C H, Li B S, Zhou H L, Yang Y T, Fu Y 2009 Acta Phys. Sin. 58 3302 (in Chinese) [张洪华、张崇宏、李炳生、周丽宏、杨义涛、付云 2009 物理学报 58 3302]

    [3]

    Tu X H, Li D H 2000 Acta Phys. Sin. 49 1383 (in Chinese) [涂鲜花、李道火 2000 物理学报 49 1383]

    [4]

    Yao F, Xue C L, Cheng B W, Wang Q M 2007 Acta Phys. Sin. 56 6654 (in Chinese) [姚 飞、薛春来、成步文、王启明 2007 物理学报 56 6654]

    [5]

    Liu J L, Wu W G, Balandin A, Jin G L 1999 Appl. Phys. Lett. 74 185

    [6]

    Scarselli M, Masala S 2007 Appl. Phys. Lett. 81 141117

    [7]

    Wang K L, Liu J L, Jin G 2002 J. Cryst. Growth 237-239 1892

    [8]

    Alguno A, Usami N 2004 Appl. Phys. Lett. 84 2802

    [9]

    Eaglesham D J, Cerullo M 1990 Phys. Rev. Lett. 64 1943

    [10]

    Song Y X, Yu Z Y, Liu Y M 2008 Acta Phys. Sin. 57 2399 (in Chinese) [宋禹忻、于重远,刘玉敏 2008 物理学报 57 2399]

    [11]

    Ross F M, Tromp R M, Reuter M C 1999 Science 286 1931

    [12]

    Brunner K 2002 Rep. Prog. Phys. 65 27

    [13]

    Jin G, Liu J L, Wang K L 2003 Appl. Phys. Lett. 83 2847

    [14]

    Ross F M, Tersoff J, Tromp R M 1998 Phys. Rev. Lett. 80 984

    [15]

    Peng Y C, Ikeda M, Miyazaki S 2003 Acta Phys. Sin. 52 3108 (in Chinese) [彭英才、池田弘央、宫崎诚一 2003 物理学报 52 3108]

    [16]

    Liang S, Zhu H L, Pan J Q, Wang W 2006 Chin. Phys. 15 1114

    [17]

    Ribeiro G M, Gratkovski A M, Kamins T I 1998 Science 279 353

    [18]

    Ross F M, Tromp R M, Reuter M C 1994 Science 286 3570

    [19]

    Chung H C, Liu C P, Lai Y L 2008 Appl. Phys. A 91 267

    [20]

    Zhang X G, Wang C, Yang J, Yang Y 2010 Journal of Functional Materials 41 1982 (in Chinese) [张学贵、王 茺、杨 杰、杨 宇 2010 功能材料 41 1982]

    [21]

    Zhang X G, Wang C, Yang J, Lu Z Q, Yang Y 2010 7th National Conference on Functional Materials and Applications Changsha October 15—19 2010 p268 (in Chinese) [张学贵、王 茺、杨 杰、鲁植全、杨 宇 2010 第七届中国功能材料及其应用学术会议 长沙 2010.10.15—19 第268页]

    [22]

    Leonard D, Krishnamurthy M, Reaves C M, 1993 Appl. Phys. Lett. 63 3203

    [23]

    Yang H B 2005 Ph. D. Dissertation (Beijing: Beijing University of Posts and Telecommunications) (in Chinese) [杨红波 2005博士学位论文 (北京: 北京邮电大学)]

    [24]

    Schitterhelm P 1997 Thin Solid Films 294 291

    [25]

    Huang C J, Zuo Y H, Li D Z 2001 Appl. Phys. Lett. 78 3881

    [26]

    Li X L 2009 Ph. D. Dissertation (Guang Zhou:Sunyat-Sen University) (in Chinese) [李心磊 2009 博士学位论文 (广州:中山大学)]

    [27]

    Chung H C, Liu C P, Lai Y L 2008 Appl. Phys. A 91 267

    [28]

    Yang J, Wang C, Ouyang K, Yang R D, Liu F, Yang Y 2009 Journal of Functional Materials 40 135 (in Chinese) [杨 杰、王 茺、欧阳焜、杨瑞东、刘 芳、杨宇 2009 功能材料 40 135]

    [29]

    Radic N, Pivac B, Dubcek P, Kovacevic I, Bernstorff S 2006 Thin solid Films 515 7522

    [30]

    Brya W J 1973 Solid State Commun 12 253.

    [31]

    Cerdeira F, Pinczuk A, Bean J C 1984 Appl. Phys. Lett. 45 1138

    [32]

    Brunner K 2002 Rep. Prog. Phys. 65 27

    [33]

    Yang Y, Chen G, Deng S K, Gao L G 2004 Journal of functional materials 35 882 (in Chinese) [杨 宇、陈 刚、邓书康、高立刚 2004 功能材料 35 882]

  • [1]

    Zhao L X, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2010 Acta Phys. Sin. 59 6545 (in Chinese) [赵丽霞、张鹤鸣、胡辉勇、宣荣喜、戴显英 2010 物理学报 59 6545]

    [2]

    Zhang H H, Zhang C H, Li B S, Zhou H L, Yang Y T, Fu Y 2009 Acta Phys. Sin. 58 3302 (in Chinese) [张洪华、张崇宏、李炳生、周丽宏、杨义涛、付云 2009 物理学报 58 3302]

    [3]

    Tu X H, Li D H 2000 Acta Phys. Sin. 49 1383 (in Chinese) [涂鲜花、李道火 2000 物理学报 49 1383]

    [4]

    Yao F, Xue C L, Cheng B W, Wang Q M 2007 Acta Phys. Sin. 56 6654 (in Chinese) [姚 飞、薛春来、成步文、王启明 2007 物理学报 56 6654]

    [5]

    Liu J L, Wu W G, Balandin A, Jin G L 1999 Appl. Phys. Lett. 74 185

    [6]

    Scarselli M, Masala S 2007 Appl. Phys. Lett. 81 141117

    [7]

    Wang K L, Liu J L, Jin G 2002 J. Cryst. Growth 237-239 1892

    [8]

    Alguno A, Usami N 2004 Appl. Phys. Lett. 84 2802

    [9]

    Eaglesham D J, Cerullo M 1990 Phys. Rev. Lett. 64 1943

    [10]

    Song Y X, Yu Z Y, Liu Y M 2008 Acta Phys. Sin. 57 2399 (in Chinese) [宋禹忻、于重远,刘玉敏 2008 物理学报 57 2399]

    [11]

    Ross F M, Tromp R M, Reuter M C 1999 Science 286 1931

    [12]

    Brunner K 2002 Rep. Prog. Phys. 65 27

    [13]

    Jin G, Liu J L, Wang K L 2003 Appl. Phys. Lett. 83 2847

    [14]

    Ross F M, Tersoff J, Tromp R M 1998 Phys. Rev. Lett. 80 984

    [15]

    Peng Y C, Ikeda M, Miyazaki S 2003 Acta Phys. Sin. 52 3108 (in Chinese) [彭英才、池田弘央、宫崎诚一 2003 物理学报 52 3108]

    [16]

    Liang S, Zhu H L, Pan J Q, Wang W 2006 Chin. Phys. 15 1114

    [17]

    Ribeiro G M, Gratkovski A M, Kamins T I 1998 Science 279 353

    [18]

    Ross F M, Tromp R M, Reuter M C 1994 Science 286 3570

    [19]

    Chung H C, Liu C P, Lai Y L 2008 Appl. Phys. A 91 267

    [20]

    Zhang X G, Wang C, Yang J, Yang Y 2010 Journal of Functional Materials 41 1982 (in Chinese) [张学贵、王 茺、杨 杰、杨 宇 2010 功能材料 41 1982]

    [21]

    Zhang X G, Wang C, Yang J, Lu Z Q, Yang Y 2010 7th National Conference on Functional Materials and Applications Changsha October 15—19 2010 p268 (in Chinese) [张学贵、王 茺、杨 杰、鲁植全、杨 宇 2010 第七届中国功能材料及其应用学术会议 长沙 2010.10.15—19 第268页]

    [22]

    Leonard D, Krishnamurthy M, Reaves C M, 1993 Appl. Phys. Lett. 63 3203

    [23]

    Yang H B 2005 Ph. D. Dissertation (Beijing: Beijing University of Posts and Telecommunications) (in Chinese) [杨红波 2005博士学位论文 (北京: 北京邮电大学)]

    [24]

    Schitterhelm P 1997 Thin Solid Films 294 291

    [25]

    Huang C J, Zuo Y H, Li D Z 2001 Appl. Phys. Lett. 78 3881

    [26]

    Li X L 2009 Ph. D. Dissertation (Guang Zhou:Sunyat-Sen University) (in Chinese) [李心磊 2009 博士学位论文 (广州:中山大学)]

    [27]

    Chung H C, Liu C P, Lai Y L 2008 Appl. Phys. A 91 267

    [28]

    Yang J, Wang C, Ouyang K, Yang R D, Liu F, Yang Y 2009 Journal of Functional Materials 40 135 (in Chinese) [杨 杰、王 茺、欧阳焜、杨瑞东、刘 芳、杨宇 2009 功能材料 40 135]

    [29]

    Radic N, Pivac B, Dubcek P, Kovacevic I, Bernstorff S 2006 Thin solid Films 515 7522

    [30]

    Brya W J 1973 Solid State Commun 12 253.

    [31]

    Cerdeira F, Pinczuk A, Bean J C 1984 Appl. Phys. Lett. 45 1138

    [32]

    Brunner K 2002 Rep. Prog. Phys. 65 27

    [33]

    Yang Y, Chen G, Deng S K, Gao L G 2004 Journal of functional materials 35 882 (in Chinese) [杨 宇、陈 刚、邓书康、高立刚 2004 功能材料 35 882]

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    [8] Peng Shu-Ming, Shen Hua-Hai, Long Xing-Gui, Zhou Xiao-Song, Yang Li, Zu Xiao-Tao. The influence of deuteration and helium-implantation on the surface morphology and phase structure of scandium thick film. Acta Physica Sinica, 2012, 61(17): 176106. doi: 10.7498/aps.61.176106
    [9] LIAO MEI-YONG, QIN FU-GUANG, CHAI CHUN-LIN, LIU ZHI-KAI, YANG SHAO-YAN, YAO ZHEN-YU, WANG ZHAN-GUO. INFLUENCE OF ION ENERGY AND DEPOSITION TEMPERATURE ON THE SURFACE MORPHOLOGY OF CARBON FILMS DEPOSITED BY ION BEAMS. Acta Physica Sinica, 2001, 50(7): 1324-1328. doi: 10.7498/aps.50.1324
    [10] Zhong Hong-Mei, Chen Xiao-Shuang, Wang Jin-Bin, Xia Chang-Sheng, Wang Shao-Wei, Li Zhi-Feng, Xu Wen-Lan, Lu Wei. Preparation of ZnMnO by ion implantation and its spectral characterization. Acta Physica Sinica, 2006, 55(4): 2073-2077. doi: 10.7498/aps.55.2073
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  • Received Date:  05 November 2010
  • Accepted Date:  23 December 2010
  • Published Online:  15 September 2011

Evolution of Ge/Si quantum dots self-assembledgrown by ion beam sputtering

  • 1. Institute of Optoelectronic Information Materials,Academy of Engineering and Technology, Yunnan University, Kunming 650091, China

Abstract: A series of Ge quantum dot samples with different Ge thickness is grown on n-Si(100) substrates by ion beam sputtering. Their morphology and structure are characterizated using AFM and Raman spectra, in which the evolution of the morphology, density, dimension, crystalline, and composition of the Ge quantum dots are discussed in detail. The results show that after the growth mode transiting from 2-D to 3-D, the shape of the Ge quantum dot changes directly into a dome shape and no pyramid dots are observed. Besides, with the increase of the Ge deposition, the density of the quantum dots increases to a maximum and then decreases, the crystalline becomes better, but the Ge/Si alloying processing is enhanced and the Ge composition decreases in quantum dots at the same time.

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