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Fabrication and optical properties of ZnO/ZnMgO multiple quantum wells on m-sapphire substrates

Lü You-Ming Su Shi-Chen Mei Ting

Fabrication and optical properties of ZnO/ZnMgO multiple quantum wells on m-sapphire substrates

Lü You-Ming, Su Shi-Chen, Mei Ting
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  • The ZnO/Zn0.85Mg0.15O multiple quantum wells(MQWs)are fabricated on m-Al2O3 substrates by plasma-assisted molecular beam epitaxy (P-MBE) using a ZnMgO buffer layers. The reflection high-energy electron diffraction (RHEED) images indicate that the MQWs are of two-dimensional growth .The temperature dependent photoluminescence (PL) of the MQW also shows the quantum confine effect even at room temperature. The PL peak of 3nm MQW is 3.405 eV at 290 K.The PL spectrum in ZnO/Zn0.85Mg0.15O MQW is dominated by localized exciton emission at low temperatures, while the free exciton transition gradually dominates the spectrum at higher temperatures up to room temperature. The exciton binding energy in the 3 nm ZnO/Zn0.85Mg0.15O MQW is about 73 meV.
    • Funds:
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    Bagnall D M, Chen Y F, Zhu Z, Yao T, Shen M Y, Goto T 1998 Appl. Phys. Lett. 73 1038

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    Zhang X T, Xiao Z Y, Zhang W L, Gao H,Wang Y X, Liu Y C, Zhang J Y,Xu W 2003 Acta Phys. Sin. 52 740 (in Chinese)[张喜田、肖芝燕、张伟力、高 红、王玉玺、刘益春、张吉英、许 武 2003 物理学报 52 740]

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    Makino T, Tuan N T, Sun H D, Chia C H, Segawa Y, Kawasaki M, Ohtomo A 2001 Appl. Phys. Lett. 78 1979

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    Ohtomo A, Kawasaki M, Ohkubo I, Koinuma H, Segawa Y 1999 Appl. Phys. Lett. 75 980

    [8]

    Zhang B P, Binh N T, Wakatsuki K, Liu C Y, Segawa Y 2005 Appl. Phys. Lett. 86 032105

    [9]

    Wang K,Yao S D,Hou L N Ding Z B,Yuan H T,Du X L,Xue Q K 2006 Acta Phys. Sin. 55 2892 (in Chinese) [王 坤、姚淑德、侯利娜、丁志博、 袁洪涛、 杜小龙、 薛其坤 2006 物理学报 55 2892]

    [10]

    Bretagnon T, Lefebvre P, Guillet T, Taliercio T, Gil B 2007 Appl. Phys. Lett. 90 201912

    [11]

    Morhain C, Bretagnon T, Lefebvre P, Tang X, Valvin P, Guillet T 2005 Phys.Rev. B 72 241305

    [12]

    Sadofev S, Blumstehgel S, Cui J, Puls J, Rogaschewski S, Henneberger F 2005 App. Phys. Lett. 87 091903

    [13]

    Lee J W, Kim J H, Han S K, Hong S K, Lee J Y, Hong S I, and Yao T 2010 J. Cryst. Growth 312 238

    [14]

    Misra P, Sharma T K, Porwal S, Kukreja L M 2006 Appl. Phys. Lett. 89 161912

    [15]

    Sun J W, Lu Y M, Liu Y C, Shen D Z, Zhang Z Z, Li B H, Zhang J Y, Yao B, Zhao D X, Fan X W 2007 J. Phys. D: Appl. Phys. 40 6541

    [16]

    Parks C, Ramdas A K, Melloch M R, Mohan L R 1993 Phys. Rev. B 48 5413

    [17]

    Du B X 2001 Principles of the Semiconductor LASER (Press of Weapons Industry) p236(in Chinese)[杜宝勋 2001 半导体激光器原理(兵器工业出版社)第236页]

    [18]

    Su S C, Lu Y M, Zhang Z Z, Shan C X, Li B H, Shen D Z, Yao B, Zhang J Y, Zhao D X, Fan X W 2008 Appl. Phys.Lett. 93 082108

    [19]

    Coli G, Bajaj K K 2001 Appl. Phys.Lett. 78 2861

    [20]

    Makino T, Chia C H, Tuan N T, Sun H D, Segawa Y, Kawasaki M, Ohtomo A, Tamura K, Koinuma H 2000 Appl. Phys. Lett. 77 975

  • [1]

    Bagall D M,Chen Y F,Zhu Z 1997 Appl.Phys.Lett. 70 2230

    [2]

    Segawa Y, Ohtomo A, Kawasaki M, Koinuma H, Tang Z K 1997 Phys. Stat. Sol. B 202 669

    [3]

    Bagnall D M, Chen Y F, Zhu Z, Yao T, Shen M Y, Goto T 1998 Appl. Phys. Lett. 73 1038

    [4]

    Liu H X, Zhou S M,Li S Z,Hang Y,Xu J,Gu S L, Zhang R 2006 Acta Phys. Sin. 55 1398 (in Chinese)[刘红霞、周圣明、李抒智、杭 寅、徐 军、顾书林、张 荣 2006 物理学报 55 1398]

    [5]

    Zhang X T, Xiao Z Y, Zhang W L, Gao H,Wang Y X, Liu Y C, Zhang J Y,Xu W 2003 Acta Phys. Sin. 52 740 (in Chinese)[张喜田、肖芝燕、张伟力、高 红、王玉玺、刘益春、张吉英、许 武 2003 物理学报 52 740]

    [6]

    Makino T, Tuan N T, Sun H D, Chia C H, Segawa Y, Kawasaki M, Ohtomo A 2001 Appl. Phys. Lett. 78 1979

    [7]

    Ohtomo A, Kawasaki M, Ohkubo I, Koinuma H, Segawa Y 1999 Appl. Phys. Lett. 75 980

    [8]

    Zhang B P, Binh N T, Wakatsuki K, Liu C Y, Segawa Y 2005 Appl. Phys. Lett. 86 032105

    [9]

    Wang K,Yao S D,Hou L N Ding Z B,Yuan H T,Du X L,Xue Q K 2006 Acta Phys. Sin. 55 2892 (in Chinese) [王 坤、姚淑德、侯利娜、丁志博、 袁洪涛、 杜小龙、 薛其坤 2006 物理学报 55 2892]

    [10]

    Bretagnon T, Lefebvre P, Guillet T, Taliercio T, Gil B 2007 Appl. Phys. Lett. 90 201912

    [11]

    Morhain C, Bretagnon T, Lefebvre P, Tang X, Valvin P, Guillet T 2005 Phys.Rev. B 72 241305

    [12]

    Sadofev S, Blumstehgel S, Cui J, Puls J, Rogaschewski S, Henneberger F 2005 App. Phys. Lett. 87 091903

    [13]

    Lee J W, Kim J H, Han S K, Hong S K, Lee J Y, Hong S I, and Yao T 2010 J. Cryst. Growth 312 238

    [14]

    Misra P, Sharma T K, Porwal S, Kukreja L M 2006 Appl. Phys. Lett. 89 161912

    [15]

    Sun J W, Lu Y M, Liu Y C, Shen D Z, Zhang Z Z, Li B H, Zhang J Y, Yao B, Zhao D X, Fan X W 2007 J. Phys. D: Appl. Phys. 40 6541

    [16]

    Parks C, Ramdas A K, Melloch M R, Mohan L R 1993 Phys. Rev. B 48 5413

    [17]

    Du B X 2001 Principles of the Semiconductor LASER (Press of Weapons Industry) p236(in Chinese)[杜宝勋 2001 半导体激光器原理(兵器工业出版社)第236页]

    [18]

    Su S C, Lu Y M, Zhang Z Z, Shan C X, Li B H, Shen D Z, Yao B, Zhang J Y, Zhao D X, Fan X W 2008 Appl. Phys.Lett. 93 082108

    [19]

    Coli G, Bajaj K K 2001 Appl. Phys.Lett. 78 2861

    [20]

    Makino T, Chia C H, Tuan N T, Sun H D, Segawa Y, Kawasaki M, Ohtomo A, Tamura K, Koinuma H 2000 Appl. Phys. Lett. 77 975

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  • Received Date:  17 January 2011
  • Accepted Date:  29 March 2011
  • Published Online:  15 September 2011

Fabrication and optical properties of ZnO/ZnMgO multiple quantum wells on m-sapphire substrates

  • 1. (1)College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China; (2)Key Laboratory of Electroluminescent Devices, Department of Education of Guangdong Province, China Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631, China

Abstract: The ZnO/Zn0.85Mg0.15O multiple quantum wells(MQWs)are fabricated on m-Al2O3 substrates by plasma-assisted molecular beam epitaxy (P-MBE) using a ZnMgO buffer layers. The reflection high-energy electron diffraction (RHEED) images indicate that the MQWs are of two-dimensional growth .The temperature dependent photoluminescence (PL) of the MQW also shows the quantum confine effect even at room temperature. The PL peak of 3nm MQW is 3.405 eV at 290 K.The PL spectrum in ZnO/Zn0.85Mg0.15O MQW is dominated by localized exciton emission at low temperatures, while the free exciton transition gradually dominates the spectrum at higher temperatures up to room temperature. The exciton binding energy in the 3 nm ZnO/Zn0.85Mg0.15O MQW is about 73 meV.

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