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Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons

Lin Qi Chen Yu-Hang Wu Jian-Bao Kong Zong-Min

Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons

Lin Qi, Chen Yu-Hang, Wu Jian-Bao, Kong Zong-Min
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Publishing process
  • Received Date:  02 November 2010
  • Accepted Date:  24 December 2010
  • Published Online:  15 September 2011

Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons

  • 1. Shanghai University of Engineering Science, Shanghai 201620, China

Abstract: The energy band structure, the transmission spectrum and the current-voltage characteristics of the N-doped zigzag graphene nanoribbons (z-GNRs) have been investigated by performing first-principles calculations. The results show the appearance of energy gap and a metal-semiconductor transition induced by N-doping of z-GNRs. With impurity concentration increasing, the current under the same bias decreases significantly, while the transmission coefficient near the Fermi surface decreases gradually. In addition, the length, the width and the N-doping position of z-GNR affect the transport property. Especially, the impurity concentration competes with the N-doping position in the influence on the transport property for narrow z-GNRs.

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