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S substituting for P point defect-induced laser damage in KDP crystals

Wang Kun-Peng Yan Shi

S substituting for P point defect-induced laser damage in KDP crystals

Wang Kun-Peng, Yan Shi
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Publishing process
  • Received Date:  23 December 2009
  • Accepted Date:  06 December 2010
  • Published Online:  15 September 2011

S substituting for P point defect-induced laser damage in KDP crystals

  • 1. National Center for Materials Service Safety, University of Science and Technology Beijing, Beijing 100083,China

Abstract: In this paper, we present the ab initio calculations of S substituting for P point defects (Sp) in KDP crystal. The electronic structure and the relaxing configuration of Sp are studied. The properties of density of states and band structure of KDP with Sp are discussed. The Sp’s in neutral, ±1, and +2 charge states lead to the formation of an isolated SO4 in KDP and no defect state appearing in the energy gap. However, Sp in the -2 charge states induces defect states in the energy gap and therefore laser-induced damage threshold will be reduced.

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