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Near-infrared broadband emission spectroscopic properties of Bi: α-BaB2O4 single crystal induced by electron irradiation

Li Xin-Nian Fang Xiao-Ming Yang Qiu-Hong Zhao Heng-Yu Yu Ping-Sheng Guo Xing Su Liang-Bi Xu Jun

Near-infrared broadband emission spectroscopic properties of Bi: α-BaB2O4 single crystal induced by electron irradiation

Li Xin-Nian, Fang Xiao-Ming, Yang Qiu-Hong, Zhao Heng-Yu, Yu Ping-Sheng, Guo Xing, Su Liang-Bi, Xu Jun
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  • Bi:α-BaB2O4 crystal samples are grown by the traditional Czochralski method and the obtained samples are irradiated by electron beam. Absorption and emission spectra of the samples are measured at room temperature before and after their electron irradiation. Under 808 nm LD excitation, broadband (FWHM at 52 nm) near-infrared emissions centered at about 1135 nm are observed in electron-irradiated Bi:α-BaB2O4 samples. Both the emissions are believed to be due to Bi+ ions. Electron beam helps to reduce Bi3+ and Bi2+ into univalence. The formation processes in the samples with different radiation doses are not the same, which is primarily discussed in this work.
    • Funds:
    [1]

    Ogoshi H, Ichino S, Kurotori K 2000 J. Furukawa Rev. 20 17

    [2]

    Yang J H, Dai S X, Wen L, Liu Z P, Hu L L, Jiang Z H 2003 Acta Phys. Sin. 52 514(in Chinese) [杨建虎、戴世勋、温 磊、柳祝平、胡丽丽、姜中宏 2003 物理学报 52 514]

    [3]

    Chen B Y, Lin Y H, Chen D D, Jiang Z H 2005 Acta Phys. Sin. 54 2374 (in Chinese) [陈炳炎、刘粤惠、陈东丹、姜中宏 2005 物理学报 54 2374]

    [4]

    Fujimoto Y, Nakatsuka M 2001 Jpn. J. Appl. Phys. 40 L279

    [5]

    Peng M Y, Qiu J R, Chen D P, Meng X G, Yang Y, Jiang X W, Zhu C S 2004 Opt. Lett. 29 1998

    [6]

    Wang X J, Xia H P 2006 Acta Phys. Sin. 55 5263 (in Chinese) [王雪俊、夏海平 2006 物理学报 55 5263]

    [7]

    Dianov E M, Dvoyrin V V, Mashinsky V M, Umnikov A A, Gur'yanov A N 2005 Quantum Electon. 35 1083

    [8]

    Razdobreev I, Bigot L, Pureur V, Bouwmans G, Douay M, Jurdyc A M 2006 Appl. Phys. Lett. 90 031103

    [9]

    Dvoyrin V V, Mashinsky V M, Dianov E M 2007 Opt. Lett. 32 451

    [10]

    Kivisto S, Puustinen J, Guina M, Okhotnikov O G, Dianov E M 2008 Electron. Lett. 44 1456

    [11]

    Rulkov A B, Ferlin A A, Popov S V, Taylor J R, Razdobreev I, Bigot I, Bouwmans G 2007 Opt. Express. 15 5473

    [12]

    Meng X G, Qiu J R, Peng M Y, Chen D P, Zhao Q S, Jiang X W, Zhu C S 2005 Opt. Express 13 1628

    [13]

    Zhou S F, Zhu B, Yang H C, Ye S, Lakshminarayana G, Hao J H, Qiu J R 2008 Adv. Funt. Mater. 18 1407

    [14]

    Sokolov V O, Plotnichenko V G, Dianov E M 2008 Opt. Lett. 33 1488

    [15]

    Peng M Y, Qiu J R, Chen D P, Meng X G, Zhu C S 2005 Opt. Lett. 30 2433

    [16]

    Kustov E F, Bulatov L I, Dvoyrin V V, Mashinsky V M 2009 Opt. Lett. 34 1549

    [17]

    Okhrimchuk A G, Btuvia L N, Dianov E M, Lichkova N V, Zagorodnev V N, Boldyrev K N 2008 Opt. Lett. 33 2182

    [18]

    Peng M Y, Sprenger B, Schmidt M A, Schwefel H G L, Wondraczek L 2010 Opt. Express 18 12852

    [19]

    Su L B, Yu J, Zhou P, Li H J, Zheng L H, Yang Y, Wu F, Xia H P, Xu J 2009 Opt. Lett. 34 2504

    [20]

    Zhou P, Su L B, Li H J, Yu J, Zheng L H, Yang Q H, Xu J 2010 Acta Phys. Sin. 59 2827 (in Chinese) [周 朋、 苏良碧、李红军、喻 军、郑丽和、杨秋红、徐 军 2010 物理学报 59 2827]

    [21]

    Zhou G Q, Xu J, Chen X D 1998 J. Crystal Growth. 191 517

    [22]

    Yu J, Zhou P, Zhao H Y, Wu F, Xia H P, Su L B, Xu J 2010 Acta Phys. Sin. 59 3538 (in Chinese) [喻 军、周 朋、赵衡煜、吴 峰、夏海平、苏良碧、徐 军 2010 物理学报 59 3538]

    [23]

    Blasse G, Meijerink A, Nomes M, Zuidema J 1994 J. Phys. Chem. Solids 55 171

    [24]

    Srivastava A M 1998 J. Lumin. 78 239

    [25]

    Novoselov A, Yoshikawa A, Nikl M, Pejchal J, Fukuda T 2006 J. Cryst. Growth 292 236

    [26]

    Blasse G, Bril A 1968 J. Chem. Phys. 48 217

    [27]

    Srivastava A M 1998 J. Lumin. 78 239

    [28]

    Dvoyrin V V, Kir'yanov A V, Mashinsky V M, Medvedkov O I, Umnikov A A, Guryanov A N, Dianov E M 2010 IEEE J. Quantum Elect. 46 182

    [29]

    Shannon R D 1976 Acta Cryst. A 2 751

    [30]

    Xu J, Zhao H Y, Su L B, Yu J, Zhou P, Tang H L, Zheng L H, Li H J 2010 Opt. Express. 18 3385

    [31]

    Zhou N, Qiao D J 2002 Materials Dynamics Under Pulse Beam Radiation (Beijing: China National Defence Industry Press) p495—498 (in Chinese) [周 南、乔登江 2002 脉冲束辐照材料动力学 (北京: 国防工业出版社) 第495—498页]

  • [1]

    Ogoshi H, Ichino S, Kurotori K 2000 J. Furukawa Rev. 20 17

    [2]

    Yang J H, Dai S X, Wen L, Liu Z P, Hu L L, Jiang Z H 2003 Acta Phys. Sin. 52 514(in Chinese) [杨建虎、戴世勋、温 磊、柳祝平、胡丽丽、姜中宏 2003 物理学报 52 514]

    [3]

    Chen B Y, Lin Y H, Chen D D, Jiang Z H 2005 Acta Phys. Sin. 54 2374 (in Chinese) [陈炳炎、刘粤惠、陈东丹、姜中宏 2005 物理学报 54 2374]

    [4]

    Fujimoto Y, Nakatsuka M 2001 Jpn. J. Appl. Phys. 40 L279

    [5]

    Peng M Y, Qiu J R, Chen D P, Meng X G, Yang Y, Jiang X W, Zhu C S 2004 Opt. Lett. 29 1998

    [6]

    Wang X J, Xia H P 2006 Acta Phys. Sin. 55 5263 (in Chinese) [王雪俊、夏海平 2006 物理学报 55 5263]

    [7]

    Dianov E M, Dvoyrin V V, Mashinsky V M, Umnikov A A, Gur'yanov A N 2005 Quantum Electon. 35 1083

    [8]

    Razdobreev I, Bigot L, Pureur V, Bouwmans G, Douay M, Jurdyc A M 2006 Appl. Phys. Lett. 90 031103

    [9]

    Dvoyrin V V, Mashinsky V M, Dianov E M 2007 Opt. Lett. 32 451

    [10]

    Kivisto S, Puustinen J, Guina M, Okhotnikov O G, Dianov E M 2008 Electron. Lett. 44 1456

    [11]

    Rulkov A B, Ferlin A A, Popov S V, Taylor J R, Razdobreev I, Bigot I, Bouwmans G 2007 Opt. Express. 15 5473

    [12]

    Meng X G, Qiu J R, Peng M Y, Chen D P, Zhao Q S, Jiang X W, Zhu C S 2005 Opt. Express 13 1628

    [13]

    Zhou S F, Zhu B, Yang H C, Ye S, Lakshminarayana G, Hao J H, Qiu J R 2008 Adv. Funt. Mater. 18 1407

    [14]

    Sokolov V O, Plotnichenko V G, Dianov E M 2008 Opt. Lett. 33 1488

    [15]

    Peng M Y, Qiu J R, Chen D P, Meng X G, Zhu C S 2005 Opt. Lett. 30 2433

    [16]

    Kustov E F, Bulatov L I, Dvoyrin V V, Mashinsky V M 2009 Opt. Lett. 34 1549

    [17]

    Okhrimchuk A G, Btuvia L N, Dianov E M, Lichkova N V, Zagorodnev V N, Boldyrev K N 2008 Opt. Lett. 33 2182

    [18]

    Peng M Y, Sprenger B, Schmidt M A, Schwefel H G L, Wondraczek L 2010 Opt. Express 18 12852

    [19]

    Su L B, Yu J, Zhou P, Li H J, Zheng L H, Yang Y, Wu F, Xia H P, Xu J 2009 Opt. Lett. 34 2504

    [20]

    Zhou P, Su L B, Li H J, Yu J, Zheng L H, Yang Q H, Xu J 2010 Acta Phys. Sin. 59 2827 (in Chinese) [周 朋、 苏良碧、李红军、喻 军、郑丽和、杨秋红、徐 军 2010 物理学报 59 2827]

    [21]

    Zhou G Q, Xu J, Chen X D 1998 J. Crystal Growth. 191 517

    [22]

    Yu J, Zhou P, Zhao H Y, Wu F, Xia H P, Su L B, Xu J 2010 Acta Phys. Sin. 59 3538 (in Chinese) [喻 军、周 朋、赵衡煜、吴 峰、夏海平、苏良碧、徐 军 2010 物理学报 59 3538]

    [23]

    Blasse G, Meijerink A, Nomes M, Zuidema J 1994 J. Phys. Chem. Solids 55 171

    [24]

    Srivastava A M 1998 J. Lumin. 78 239

    [25]

    Novoselov A, Yoshikawa A, Nikl M, Pejchal J, Fukuda T 2006 J. Cryst. Growth 292 236

    [26]

    Blasse G, Bril A 1968 J. Chem. Phys. 48 217

    [27]

    Srivastava A M 1998 J. Lumin. 78 239

    [28]

    Dvoyrin V V, Kir'yanov A V, Mashinsky V M, Medvedkov O I, Umnikov A A, Guryanov A N, Dianov E M 2010 IEEE J. Quantum Elect. 46 182

    [29]

    Shannon R D 1976 Acta Cryst. A 2 751

    [30]

    Xu J, Zhao H Y, Su L B, Yu J, Zhou P, Tang H L, Zheng L H, Li H J 2010 Opt. Express. 18 3385

    [31]

    Zhou N, Qiao D J 2002 Materials Dynamics Under Pulse Beam Radiation (Beijing: China National Defence Industry Press) p495—498 (in Chinese) [周 南、乔登江 2002 脉冲束辐照材料动力学 (北京: 国防工业出版社) 第495—498页]

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  • Received Date:  21 September 2010
  • Accepted Date:  05 December 2010
  • Published Online:  15 September 2011

Near-infrared broadband emission spectroscopic properties of Bi: α-BaB2O4 single crystal induced by electron irradiation

  • 1. (1)Applied Radiation Institute, Shanghai University, Shanghai 201800, China; (2)Department of Electronic Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China; (3)Department of Electronic Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China;Key Laboratory of Transparent and Opto-functional Inorganic Materials, Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 201800, China; (4)Key Laboratory of Transparent and Opto-functional Inorganic Materials, Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 201800, China

Abstract: Bi:α-BaB2O4 crystal samples are grown by the traditional Czochralski method and the obtained samples are irradiated by electron beam. Absorption and emission spectra of the samples are measured at room temperature before and after their electron irradiation. Under 808 nm LD excitation, broadband (FWHM at 52 nm) near-infrared emissions centered at about 1135 nm are observed in electron-irradiated Bi:α-BaB2O4 samples. Both the emissions are believed to be due to Bi+ ions. Electron beam helps to reduce Bi3+ and Bi2+ into univalence. The formation processes in the samples with different radiation doses are not the same, which is primarily discussed in this work.

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