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Preparation of AlN nanowire macroscopic arrays

Li Zhi-Jie Tian Ming He Lian-Long

Preparation of AlN nanowire macroscopic arrays

Li Zhi-Jie, Tian Ming, He Lian-Long
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  • AlN nanowire macro-arrays are successfully synthesized and characterized by the second template method. In the article we mainly research the process of preparing the AlN nanowire macro-arrays each with a certain orientation and uniform diameter by the chemical vapor deposition (CVD) method. Metal nanoparticles are prepared by CVD and self-assembled PS sphere templates, and then AlN nanowires macro arrays are compounded by the CVD on template and the metal nanoparticles on the template as a catalyst. The samples are observed by SEM and TEM, AlN nanowire macro-arrays have an area of about 0.3 mm×0.2 mm, they are well distributed, and have an average diameter of about 41 nm, an average length of about 1.8μm, distributed density and coverage of large macro-hexagonal AlN nanowire arrays. So a method to controllably prepare AIN macroscopic nanowire arrays is obtained.
    • Funds:
    [1]

    Zhang Y Q, Shi Y, Pu L, Zhang R, Zheng Y D 2008 Acta Phys. Sin. 57 5198 (in Chinese)[张轶群、施 毅、濮 林、张 荣、郑有炓 2008 物理学报 57 5198]

    [2]

    Yu L M, Fan X H, Liu J G 2004 Materials Review 18 112 (in Chinese) [于灵敏、范新会、刘建刚 2004 材料导报 18 112]

    [3]

    Zuo J, Sun L, Lin C J 2003 Electronic Components & Materials 22 32(in Chinese) [左 鹃、孙 览、林昌健 2003 电子元件与材料 22 32]

    [4]

    Yuan S J, Zhou S M, Lu M 2006 Acta Phys. Sin. 55 891 (in Chinese) [袁淑娟、周仕明、鹿 牧 2006物理学报 55 891]

    [5]

    Hernandez-Velez M 2006 Thin Solid Films 495 51

    [6]

    Viernow J, Petrovykh D Y, Men F K 1999 Appl. Phys. Lett. 74 2125

    [7]

    Wang L C, Zhang X Z 2005 Chin. Electr. Microse. Soe. 24 252 (in Chinese) [王立晟、章晓中 2005 电子显微镜报 24 252]

    [8]

    Morkoc S S 1992 Vac. Sci. Technol B 10 1237

    [9]

    Rubio A, Coikill J L, Cohen M L 1993 Phys. Rev. B 48 11810

    [10]

    Xu C K, Xue L, Yin C R 2003 Phys. Stat Sol. A 198 329

    [11]

    Liu Q L, Tanaka T, Hu J Q 2003 Appl. Phys. Lett. 83 4939

    [12]

    Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto 2006 Nature 441 325

    [13]

    Yoganand S N, Jagannadham K, Karoui A 2002 Vac. Sci.Technol. A 20 1974

    [14]

    Tang Y B, Liu Y Q, Sun C H 2007 Mater. Res. 22 2711

    [15]

    Shen C H, Yang T Z, Xiao C W 2008 Chin. Phys. B 17 2191

  • [1]

    Zhang Y Q, Shi Y, Pu L, Zhang R, Zheng Y D 2008 Acta Phys. Sin. 57 5198 (in Chinese)[张轶群、施 毅、濮 林、张 荣、郑有炓 2008 物理学报 57 5198]

    [2]

    Yu L M, Fan X H, Liu J G 2004 Materials Review 18 112 (in Chinese) [于灵敏、范新会、刘建刚 2004 材料导报 18 112]

    [3]

    Zuo J, Sun L, Lin C J 2003 Electronic Components & Materials 22 32(in Chinese) [左 鹃、孙 览、林昌健 2003 电子元件与材料 22 32]

    [4]

    Yuan S J, Zhou S M, Lu M 2006 Acta Phys. Sin. 55 891 (in Chinese) [袁淑娟、周仕明、鹿 牧 2006物理学报 55 891]

    [5]

    Hernandez-Velez M 2006 Thin Solid Films 495 51

    [6]

    Viernow J, Petrovykh D Y, Men F K 1999 Appl. Phys. Lett. 74 2125

    [7]

    Wang L C, Zhang X Z 2005 Chin. Electr. Microse. Soe. 24 252 (in Chinese) [王立晟、章晓中 2005 电子显微镜报 24 252]

    [8]

    Morkoc S S 1992 Vac. Sci. Technol B 10 1237

    [9]

    Rubio A, Coikill J L, Cohen M L 1993 Phys. Rev. B 48 11810

    [10]

    Xu C K, Xue L, Yin C R 2003 Phys. Stat Sol. A 198 329

    [11]

    Liu Q L, Tanaka T, Hu J Q 2003 Appl. Phys. Lett. 83 4939

    [12]

    Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto 2006 Nature 441 325

    [13]

    Yoganand S N, Jagannadham K, Karoui A 2002 Vac. Sci.Technol. A 20 1974

    [14]

    Tang Y B, Liu Y Q, Sun C H 2007 Mater. Res. 22 2711

    [15]

    Shen C H, Yang T Z, Xiao C W 2008 Chin. Phys. B 17 2191

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    [9] Chen Cheng-Zhao, Zheng Yuan-Yu, Huang Shi-Hao, Li Cheng, Lai Hong-Kai, Chen Song-Yan. Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD. Acta Physica Sinica, 2012, 61(7): 078104. doi: 10.7498/aps.61.078104
    [10] LIAO KE-JUN, WANG WAN-LU. FRACTURE STRENGTH STUDIES OF POLYCRYSTALLINE DIAMOND FILMS PRODUCED BY DC PLASMA CVD. Acta Physica Sinica, 1994, 43(9): 1559-1563. doi: 10.7498/aps.43.1559
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  • Received Date:  22 October 2010
  • Accepted Date:  09 December 2010
  • Published Online:  15 September 2011

Preparation of AlN nanowire macroscopic arrays

  • 1. (1)College of Science, Shenyang University of Technology, Shenyang 110178,China; (2)Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China

Abstract: AlN nanowire macro-arrays are successfully synthesized and characterized by the second template method. In the article we mainly research the process of preparing the AlN nanowire macro-arrays each with a certain orientation and uniform diameter by the chemical vapor deposition (CVD) method. Metal nanoparticles are prepared by CVD and self-assembled PS sphere templates, and then AlN nanowires macro arrays are compounded by the CVD on template and the metal nanoparticles on the template as a catalyst. The samples are observed by SEM and TEM, AlN nanowire macro-arrays have an area of about 0.3 mm×0.2 mm, they are well distributed, and have an average diameter of about 41 nm, an average length of about 1.8μm, distributed density and coverage of large macro-hexagonal AlN nanowire arrays. So a method to controllably prepare AIN macroscopic nanowire arrays is obtained.

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