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A new growth method of roughed p-GaN in GaN-based light emitting diodes

Wang Lai Han Yan-Jun Luo Yi Deng He-Qing Qiu Jian-Sheng Zhang Jie Li Shui-Qing

A new growth method of roughed p-GaN in GaN-based light emitting diodes

Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie, Li Shui-Qing
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  • Received Date:  07 December 2010
  • Accepted Date:  13 December 2010
  • Published Online:  15 September 2011

A new growth method of roughed p-GaN in GaN-based light emitting diodes

  • 1. (1)Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China; (2)Xiamen Sanan Optoelectronics Co. Ltd., Xiamen 361009, China; (3)Xiamen Sanan Optoelectronics Co. Ltd., Xiamen 361009, China;Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Abstract: A new growth method of roughed p-GaN has been demonstrated in this paper. First, some crystal seeds of p-GaN are obtained by utilizing low-temperature growth. Then, a p-GaN high-temperature expitaxy layer is grown on it subsequently with a fast growth rate, which will enlarge the roughness degree. Compared with the luminous flux of the conventional light emitting diode with flat p-GaN, the luminous flux is improved by 45%. Meanwhile, it is found that the problems of large reverse current and high forward bias aroused by the low-temperature epitaxy are also solved.

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