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Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation

Zhou Xin-Jie Li Lei-Lei Yu Zong-Guang Xiao Zhi-Qiang

Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation

Zhou Xin-Jie, Li Lei-Lei, Yu Zong-Guang, Xiao Zhi-Qiang
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  • Threshold voltage drift is one of the most important characteristics of device degradation. Based on the research of threshold drifts of the front and the back gate of SOI SONOS EEPROM, device degradation is studied in irradiation environment. Physical mechanism of threshold drifts is analyzed through physical band and mobile carrier analysis. And measures to improve device performance are proposed.
    • Funds:
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    White M H, Adams D A, Bu J 2000 IEEE Circuits and Devices Magazine 16 22

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    Fang S H, Cheng X L 2007 Chinese Journal of Electron Devices 30 1211(in Chinese)[房少华、程秀兰 2007 电子器件 30 1211]

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    Takeuchi H, King T J 2003 IEEE Electron Device Letters 24 309

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    Kuesters K H, Ludwig C, Mikolajick T, Nagel N, Specht M, Pissors V, Schulze N, Stein N, Willer J 2006 ICSICT '06. 8th International Conference on Solid-State and Integrated Circuit Technology Shanghai, Oct. 23—26 2006, p740

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    Li L L, Liu H X, Yu Z G, Hao Y 2006 Acta Phys. Sin. 55 2459 (in Chinese)[李蕾蕾、刘红侠、于宗光、郝 跃 2006 物理学报 55 2459]

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    Wallinger, T 2007 Semiconductor International 30 49

    [7]

    Binder D, Smith E C, Holman A B 1975 IEEE Transactions on Nuclear Science 22 2675

    [8]

    Musseau O 1996 IEEE Transactions on Nuclear Science 43 603

    [9]

    Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Paillet P, Dodd P E 2003 IEEE Transactions on Nuclear Science 50 522

    [10]

    Du P Y, Lue H T, Wang S Y, Huang T Y, Hsieh K Y, Liu R, Lu C Y 2008 IEEE Transactions on Electron Devices 55 2230

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    He C H, Geng B, Yang H L, Chen X H, Wang Y P, Li G Z 2003 Acta Phys. Sin. 52 180 (in Chinese)[贺朝会、耿 斌、杨海亮、陈晓华 王燕萍、李国政 2003 物理学报 52 180]

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    Fang S H, Cheng X L, Huang Y, Gu H H 2007 Acta Phys. Sin. 56 6634(in Chinese)[房少华、程秀兰、黄 晔、顾怀怀 2007 物理学报 56 6634]

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    Yu Z G, Lu F, Xu Z, Ye S Y, Huang W, Wang W Y, Xu J Y 2000 Acta. Electronica Sinica 28 90 (in Chinese) [于宗光、陆 锋、徐 征、叶守银、黄 卫、王万业、许居衍 2000 电子学报 28 90]

    [14]

    Cellere G, Pellati P, Chimenton A, Wyss J, Modelli A, Larcher L, Paccagnella A 2001 IEEE Transactions on Nuclear Science 48 2222

    [15]

    Cai J R 2004 Electronisc and Packing 4 20(in Chinese)[蔡菊容 2004 电子与封装 4 20]

    [16]

    Zhao F Z, Liu M X, Guo T L, Liu G, Hai C H, Han Z S, Yang S C, Li R B, Lin D S, Chen W 2008 Chin. Phys. B 17 4509

    [17]

    WU A M, Chen J, Zhang E X, Yang H, Zhang Z X, Wang X 2007 Functional Materials Information 38 866(in Chinese)[武 爱民、陈 静、张恩霞、杨 慧、张正选、王 曦 2007 功能材料信息 38 866]

    [18]

    Draper B, Dockerty R, Shaneyfelt M, Habermehl S, Murray J 2008 IEEE Transactions on Nuclear Science 55 3202

    [19]

    Huang R, Zhang G Y, Li Y X, Zhang X 2005 SOI CMOS Technology and Its Application (Beijing:Science Press) p154(in Chinese)[黄 如、张国艳、李映雪、张 兴 2005 SOI CMOS技术及其应用(北京:科学出版社)第154页]

    [20]

    Wu K H,Chien H C,Chan C C 2005 IEEE Transactions on Electron De vices 52 992

    [21]

    Chien H C,Kao C H,Chang J W 2005 Microelectronic Engineering 80 256

    [22]

    Wang S Y, Lue H T, Lai E K,Yang L W, Yang T, Chen K C, Gong J, Hsieh K Y, Liu R, Lu C Y 2007 Reliability Physics Symposium 2007 Proceedings 45th Annual. IEEE International, Phoenix, AZ, April 15—19 2007 p175

    [23]

    Wang G, Eichenlaub N T, Jin Z A, Zhang Y L, White M H 2007 Semiconductor Device Research Symposium 2007 International, College Park, MD, Dec. 12—14 2007 p1

  • [1]

    White M H, Adams D A, Bu J 2000 IEEE Circuits and Devices Magazine 16 22

    [2]

    Fang S H, Cheng X L 2007 Chinese Journal of Electron Devices 30 1211(in Chinese)[房少华、程秀兰 2007 电子器件 30 1211]

    [3]

    Takeuchi H, King T J 2003 IEEE Electron Device Letters 24 309

    [4]

    Kuesters K H, Ludwig C, Mikolajick T, Nagel N, Specht M, Pissors V, Schulze N, Stein N, Willer J 2006 ICSICT '06. 8th International Conference on Solid-State and Integrated Circuit Technology Shanghai, Oct. 23—26 2006, p740

    [5]

    Li L L, Liu H X, Yu Z G, Hao Y 2006 Acta Phys. Sin. 55 2459 (in Chinese)[李蕾蕾、刘红侠、于宗光、郝 跃 2006 物理学报 55 2459]

    [6]

    Wallinger, T 2007 Semiconductor International 30 49

    [7]

    Binder D, Smith E C, Holman A B 1975 IEEE Transactions on Nuclear Science 22 2675

    [8]

    Musseau O 1996 IEEE Transactions on Nuclear Science 43 603

    [9]

    Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Paillet P, Dodd P E 2003 IEEE Transactions on Nuclear Science 50 522

    [10]

    Du P Y, Lue H T, Wang S Y, Huang T Y, Hsieh K Y, Liu R, Lu C Y 2008 IEEE Transactions on Electron Devices 55 2230

    [11]

    He C H, Geng B, Yang H L, Chen X H, Wang Y P, Li G Z 2003 Acta Phys. Sin. 52 180 (in Chinese)[贺朝会、耿 斌、杨海亮、陈晓华 王燕萍、李国政 2003 物理学报 52 180]

    [12]

    Fang S H, Cheng X L, Huang Y, Gu H H 2007 Acta Phys. Sin. 56 6634(in Chinese)[房少华、程秀兰、黄 晔、顾怀怀 2007 物理学报 56 6634]

    [13]

    Yu Z G, Lu F, Xu Z, Ye S Y, Huang W, Wang W Y, Xu J Y 2000 Acta. Electronica Sinica 28 90 (in Chinese) [于宗光、陆 锋、徐 征、叶守银、黄 卫、王万业、许居衍 2000 电子学报 28 90]

    [14]

    Cellere G, Pellati P, Chimenton A, Wyss J, Modelli A, Larcher L, Paccagnella A 2001 IEEE Transactions on Nuclear Science 48 2222

    [15]

    Cai J R 2004 Electronisc and Packing 4 20(in Chinese)[蔡菊容 2004 电子与封装 4 20]

    [16]

    Zhao F Z, Liu M X, Guo T L, Liu G, Hai C H, Han Z S, Yang S C, Li R B, Lin D S, Chen W 2008 Chin. Phys. B 17 4509

    [17]

    WU A M, Chen J, Zhang E X, Yang H, Zhang Z X, Wang X 2007 Functional Materials Information 38 866(in Chinese)[武 爱民、陈 静、张恩霞、杨 慧、张正选、王 曦 2007 功能材料信息 38 866]

    [18]

    Draper B, Dockerty R, Shaneyfelt M, Habermehl S, Murray J 2008 IEEE Transactions on Nuclear Science 55 3202

    [19]

    Huang R, Zhang G Y, Li Y X, Zhang X 2005 SOI CMOS Technology and Its Application (Beijing:Science Press) p154(in Chinese)[黄 如、张国艳、李映雪、张 兴 2005 SOI CMOS技术及其应用(北京:科学出版社)第154页]

    [20]

    Wu K H,Chien H C,Chan C C 2005 IEEE Transactions on Electron De vices 52 992

    [21]

    Chien H C,Kao C H,Chang J W 2005 Microelectronic Engineering 80 256

    [22]

    Wang S Y, Lue H T, Lai E K,Yang L W, Yang T, Chen K C, Gong J, Hsieh K Y, Liu R, Lu C Y 2007 Reliability Physics Symposium 2007 Proceedings 45th Annual. IEEE International, Phoenix, AZ, April 15—19 2007 p175

    [23]

    Wang G, Eichenlaub N T, Jin Z A, Zhang Y L, White M H 2007 Semiconductor Device Research Symposium 2007 International, College Park, MD, Dec. 12—14 2007 p1

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  • Received Date:  17 October 2010
  • Accepted Date:  31 December 2010
  • Published Online:  15 September 2011

Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation

  • 1. (1)School of Electronic Science and Engineering, South-East University, Nanjing 210096, China; (2)School of Microelectronics, Xidian University, Xi’an 710071, China;The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi 214035, China; (3)State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi 214035, China

Abstract: Threshold voltage drift is one of the most important characteristics of device degradation. Based on the research of threshold drifts of the front and the back gate of SOI SONOS EEPROM, device degradation is studied in irradiation environment. Physical mechanism of threshold drifts is analyzed through physical band and mobile carrier analysis. And measures to improve device performance are proposed.

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