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Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory

Li Ming Yu Xue-Feng Xue Yao-Guo Lu Jian Cui Jiang-Wei Gao Bo

Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory

Li Ming, Yu Xue-Feng, Xue Yao-Guo, Lu Jian, Cui Jiang-Wei, Gao Bo
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  • Received Date:  04 July 2011
  • Accepted Date:  28 May 2012
  • Published Online:  05 May 2012

Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory

  • 1. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
  • 2. Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;
  • 3. Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Abstract: In this paper, the changes of electrical parameters and their functional errors with the total radiation dose are studied, when the PDSOI static random access memory (SRAM) is irradiated under different total doses. After the SOI SRAM is irradiated by the 60Co-γ ray, the total dose radiation damage mechanism and the correlation between the changes of device parameters and function errors are discussed. For the large-scale SOI integrated circuits, this provides a possible method to further study the total dose radiation hardening and the radiation damage assessment of the devices. It is indicated that the increase of current consumption is due mainly to the radiation-induced leakage current from both field oxygen and buried oxide. The drift of threshold voltage creates the decline in output high level, the slight increase in output low level, the significant reduction in peak-peak value, and the increase of transmission delay. When the total dose accumulates and reaches a certain amount of dose, the logic mutation error emerges, resulting in the failure of shutdown function. There is a certain correlation between the transmission delay, the output high and the logic error.

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