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Influences of dislocation distribution on the resistive switching effect of Ag-SiO2 thin films

Zhang Pei-Jian Meng Yang Liu Zi-Yu Pan Xin-Yu Liang Xue-Jin Chen Dong-Min Zhao Hong-Wu

Influences of dislocation distribution on the resistive switching effect of Ag-SiO2 thin films

Zhang Pei-Jian, Meng Yang, Liu Zi-Yu, Pan Xin-Yu, Liang Xue-Jin, Chen Dong-Min, Zhao Hong-Wu
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  • Influences of dislocation distribution on the resistive switching effect of Ag doped SiO2 thin film are investigated under different sample preparation conditions. Stable resistance switching characteristics are observed for the samples annealed at 120 ℃ and prepared in Ar/O2 mixed atmosphere. It is shown that annealing process, electric field formation and atmosphere of preparation can change the intensity and the distribution of the dislocations (Ag interstitial atoms and oxygen vacancies) in the Ag-SiO2 structure, which leads to the resistive switching effect based on the formation and annihilation of the conducting filaments.
    • Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2007CB925002, 2009CB930803) and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-YW-W24).
    [1]

    Liu S Q, Wu N J, Ignatiev A 2000 Appl. Phys. Lett. 76 2749

    [2]

    Zhuang W W, Pan W, Ulrich B D, Lee J J, Stecker J, Burmaster A, Evans D R, Hsul S T, Tajiri M, Shimaoka A, Inoue K, Naka T, Awaya N, Sakiyama K, Wang Y, Liu S Q, Wu N J, Ignatiev A 2002 IEEE. IEDM p193

    [3]

    Kim D C, Seo S, Ahn S E, Suh D S, Lee M J, Park B H, Yoo I K 2006 Appl. Phys. Lett. 88 202102

    [4]

    Yang J J, Pickett M D, Li X M, Ohlberg D A A, Stewart D R, Williams R S 2008 Nat. Nanotech. 3 429

    [5]

    Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W, Chen D M 2010 Chin. Phys. B 19 037304

    [6]

    Guan W H, Long S B, Jia R, Liu M 2007 Appl. Phys. Lett. 91 062111

    [7]

    Seo J W, Park J W, Lim K S, Yang J H , Kang S J 2008 Appl. Phys. Lett. 93 223505

    [8]

    Chen A, Haddad S, Wu Y C, Lan Z, Fang T N, Kaza S 2007 Appl. Phys. Lett. 91 123517

    [9]

    Dong R, Lee D S, Xiang W F, Oh S J, Seong D J, Heo S H, Choi H J, Kwon M J, Seo S N, Pyun M B, Hasan M, Hwang H 2007 Appl. Phys. Lett. 90 042107

    [10]

    Shang D S, Sun J R, Shi L, Shen B G 2008 Appl. Phys. Lett. 93 102106

    [11]

    Shang D S, Sun J R, Shi L, Wang Z H, Shen B G 2008 Appl. Phys. Lett. 93 172119

    [12]

    Rossel C, Meijer G I, Bremaud D, Widmer D 2001 J. Appl. Phys. 90 2892

    [13]

    Gang J L, Li S L, Meng Y, Liao Z L, Liang X J, Chen D M 2009 Acta Phys. Sin. 58 5730 (in Chinese) [刚建雷, 黎松林, 孟洋, 廖昭亮, 梁学锦, 陈东敏 2009 物理学报 58 5730]

    [14]

    Waser R, Aono M 2007 Nat. Mater. 6 833

    [15]

    Sawa A 2008 Mater. Today 11 28

    [16]

    Kwon D H, Kim K M, Jang J H, Jeon J M, Lee M H, Kim G H, Li X S, Park G S, Lee B, Han S, Kim M, Hwang C S 2010 Nat. Nanotech. 5 148

    [17]

    Janousch M, Meijer G I, Staub U, Delley B, Karg S F, Andreasson B P 2007 Adv. Mat. 19 2232

    [18]

    Tsubouchi K, Ohkubo I, Kumigashira H, Oshima M, Matsumoto Yitaka K, Ohnishi T, Lippmaa M, Koinuma H 2007 Adv. Mater. 19 1711

    [19]

    Shibuya K, Dittmann R, Mi S B, Waser R 2010 Adv. Mat. 22 411

    [20]

    Viana C E, Morimoto N I, Bonnaud 2000 Microelectronics Reliability 40 613

    [21]

    Kim E, Soejima N, Watanabe Y, Ishiko M, Kachi T 2010 Jpn. J. Appl. Phys. 49 04DF08

    [22]

    Santamaria J, Iborra E, Quesada F S, Diaz G G, Vidal M R 1986 Thin Solid Films 139 201

    [23]

    Schindler C, Thermadam S C P, Waser R, Kozicki M N 2007 IEEE Trans. Electron Dev. 54 2762

    [24]

    Schindler C, Weides M, Kozicki M N, Waser R 2008 Appl. Phys. Lett. 92 122910

    [25]

    Sarkar D K, Cloutier F, El Khakani M A 2005 J. Appl. Phys. 97 084302

    [26]

    Nason T C, Yang G R, Park K H, Lu T M 1991 J. Appl. Phys. 70 1392

    [27]

    Mcbrayer J D, Swanson R M, Sigmon T W 1986 J. Electrochem. Soc. A 133 1242

    [28]

    McBrayer J D, Swanson R M, Sigmon T W, Bravman J 1983 Appl. Phys. Lett. 43 653

    [29]

    Simmons J G, Verderber R R 1967 Proc. Roy. Soc. A 301 77

    [30]

    Hsiung C P, Liao H W, Gan J Y, Wu T B, Hwang J C, Chen F, Tsai M J 2010 ACS Nano 4 5414

    [31]

    Guoa X, Schindler C, Menzel S, Waser R 2007 Appl. Phys. Lett. 91 133513

    [32]

    Rozenberg M J, Inoue I H, Sánchez M J 2006 Appl. Phys. Lett. 88 033510

    [33]

    Rozenberg M J, Inoue I H, Sánchez M J 2004 Phys. Rev. Lett. 92 178302

    [34]

    Eftekhari G 1995 Phys. Stat. Sol. A 151 129

  • [1]

    Liu S Q, Wu N J, Ignatiev A 2000 Appl. Phys. Lett. 76 2749

    [2]

    Zhuang W W, Pan W, Ulrich B D, Lee J J, Stecker J, Burmaster A, Evans D R, Hsul S T, Tajiri M, Shimaoka A, Inoue K, Naka T, Awaya N, Sakiyama K, Wang Y, Liu S Q, Wu N J, Ignatiev A 2002 IEEE. IEDM p193

    [3]

    Kim D C, Seo S, Ahn S E, Suh D S, Lee M J, Park B H, Yoo I K 2006 Appl. Phys. Lett. 88 202102

    [4]

    Yang J J, Pickett M D, Li X M, Ohlberg D A A, Stewart D R, Williams R S 2008 Nat. Nanotech. 3 429

    [5]

    Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W, Chen D M 2010 Chin. Phys. B 19 037304

    [6]

    Guan W H, Long S B, Jia R, Liu M 2007 Appl. Phys. Lett. 91 062111

    [7]

    Seo J W, Park J W, Lim K S, Yang J H , Kang S J 2008 Appl. Phys. Lett. 93 223505

    [8]

    Chen A, Haddad S, Wu Y C, Lan Z, Fang T N, Kaza S 2007 Appl. Phys. Lett. 91 123517

    [9]

    Dong R, Lee D S, Xiang W F, Oh S J, Seong D J, Heo S H, Choi H J, Kwon M J, Seo S N, Pyun M B, Hasan M, Hwang H 2007 Appl. Phys. Lett. 90 042107

    [10]

    Shang D S, Sun J R, Shi L, Shen B G 2008 Appl. Phys. Lett. 93 102106

    [11]

    Shang D S, Sun J R, Shi L, Wang Z H, Shen B G 2008 Appl. Phys. Lett. 93 172119

    [12]

    Rossel C, Meijer G I, Bremaud D, Widmer D 2001 J. Appl. Phys. 90 2892

    [13]

    Gang J L, Li S L, Meng Y, Liao Z L, Liang X J, Chen D M 2009 Acta Phys. Sin. 58 5730 (in Chinese) [刚建雷, 黎松林, 孟洋, 廖昭亮, 梁学锦, 陈东敏 2009 物理学报 58 5730]

    [14]

    Waser R, Aono M 2007 Nat. Mater. 6 833

    [15]

    Sawa A 2008 Mater. Today 11 28

    [16]

    Kwon D H, Kim K M, Jang J H, Jeon J M, Lee M H, Kim G H, Li X S, Park G S, Lee B, Han S, Kim M, Hwang C S 2010 Nat. Nanotech. 5 148

    [17]

    Janousch M, Meijer G I, Staub U, Delley B, Karg S F, Andreasson B P 2007 Adv. Mat. 19 2232

    [18]

    Tsubouchi K, Ohkubo I, Kumigashira H, Oshima M, Matsumoto Yitaka K, Ohnishi T, Lippmaa M, Koinuma H 2007 Adv. Mater. 19 1711

    [19]

    Shibuya K, Dittmann R, Mi S B, Waser R 2010 Adv. Mat. 22 411

    [20]

    Viana C E, Morimoto N I, Bonnaud 2000 Microelectronics Reliability 40 613

    [21]

    Kim E, Soejima N, Watanabe Y, Ishiko M, Kachi T 2010 Jpn. J. Appl. Phys. 49 04DF08

    [22]

    Santamaria J, Iborra E, Quesada F S, Diaz G G, Vidal M R 1986 Thin Solid Films 139 201

    [23]

    Schindler C, Thermadam S C P, Waser R, Kozicki M N 2007 IEEE Trans. Electron Dev. 54 2762

    [24]

    Schindler C, Weides M, Kozicki M N, Waser R 2008 Appl. Phys. Lett. 92 122910

    [25]

    Sarkar D K, Cloutier F, El Khakani M A 2005 J. Appl. Phys. 97 084302

    [26]

    Nason T C, Yang G R, Park K H, Lu T M 1991 J. Appl. Phys. 70 1392

    [27]

    Mcbrayer J D, Swanson R M, Sigmon T W 1986 J. Electrochem. Soc. A 133 1242

    [28]

    McBrayer J D, Swanson R M, Sigmon T W, Bravman J 1983 Appl. Phys. Lett. 43 653

    [29]

    Simmons J G, Verderber R R 1967 Proc. Roy. Soc. A 301 77

    [30]

    Hsiung C P, Liao H W, Gan J Y, Wu T B, Hwang J C, Chen F, Tsai M J 2010 ACS Nano 4 5414

    [31]

    Guoa X, Schindler C, Menzel S, Waser R 2007 Appl. Phys. Lett. 91 133513

    [32]

    Rozenberg M J, Inoue I H, Sánchez M J 2006 Appl. Phys. Lett. 88 033510

    [33]

    Rozenberg M J, Inoue I H, Sánchez M J 2004 Phys. Rev. Lett. 92 178302

    [34]

    Eftekhari G 1995 Phys. Stat. Sol. A 151 129

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  • Received Date:  19 July 2011
  • Accepted Date:  28 May 2012
  • Published Online:  05 May 2012

Influences of dislocation distribution on the resistive switching effect of Ag-SiO2 thin films

  • 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Fund Project:  Project supported by the National Basic Research Program of China (Grant Nos. 2007CB925002, 2009CB930803) and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-YW-W24).

Abstract: Influences of dislocation distribution on the resistive switching effect of Ag doped SiO2 thin film are investigated under different sample preparation conditions. Stable resistance switching characteristics are observed for the samples annealed at 120 ℃ and prepared in Ar/O2 mixed atmosphere. It is shown that annealing process, electric field formation and atmosphere of preparation can change the intensity and the distribution of the dislocations (Ag interstitial atoms and oxygen vacancies) in the Ag-SiO2 structure, which leads to the resistive switching effect based on the formation and annihilation of the conducting filaments.

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