Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Mechanical parameters selection in InSb focal plane array detector normal direction

Meng Qing-Duan Yu Qian Zhang Li-Wen Lü Yan-Qiu

Mechanical parameters selection in InSb focal plane array detector normal direction

Meng Qing-Duan, Yu Qian, Zhang Li-Wen, Lü Yan-Qiu
PDF
Get Citation
  • In order to learn the effects of front surface structural defects and back surface thinning process on the InSb chip deformation, its elastic modulus along normal direction is reduced in InSb structural modeling, and based on the typical strain character appearing under thermal shock, the mechanical parameter selection basis is deduced in this paper. Simulation results show that when the out-of-plane elastic modulus of InSb chip is set to be 30 percent Young's modulus, both the maximum Von Mises stress and Z component of strain appear in the N electrode zone, and the extremum values present non-continuous distribution. These are in good agreement with fracture origination zone and crack distribution in the fracture statistics results of 128 128 InSb infrared focal plane array under thermal shock. Besides, the region above the indium bump array is convex upward, and the domain above the isolation trough is concave downward, they are also identical with the scenario of Z component of strain in InSb chip under thermal shock. All these results indicate that the Z component of strain criterion can not only predict both crack origination zone and crack distribution, but also support both Z component of strain distribution in the central region and Z component of strain enhancement effect in the InSb chip N electrode zone.
    • Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No.61107083), the Aero Science Foundation of China (Grant No.20100142003), and the State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, China (Grant No.2012007).
    [1]

    He L, Yang D J, Ni G Q 2011 Introduction to Advanced Focal Plane Arrays (1st Ed.) (Beijing: National Defence Industry Press) p1 (in Chinese) [何力, 杨定江, 倪国强 2011 先进焦平面技术导论(第1版) (北京:国防工业出版社) 第1页]

    [2]

    Tidrow M Z 2005 Proceedings of SPIE, Bellingham, WA, March 25-28, 2005 p217

    [3]

    Gong H M, Liu D F 2008Infrared Laser Eng. 37 18 (in Chinese) [龚海梅, 刘大福 2008 红外与激光工程 37 18]

    [4]

    Dorn R J, Finger G, Huster G, Lizon J L, Mehrgan H, Meyer M, Stegmeier J, Moorwood A F M 2002 Eur. Southern Observatory. 1 1

    [5]

    Meng Q D, Zhang X L, Zhang L W, Lv Y Q 2012 Acta Phys. Sin. 61 190701 (in Chinese) [孟庆端, 张晓玲, 张立文, 吕衍秋 2012 物理学报 61 190701]

    [6]

    Liu Y D, Du H Y, Zhang G, Dong S, Ma J S 2005 Laser Infrared. 35 177 (in Chinese) [刘豫东, 杜红燕, 张刚, 董硕, 马莒生 2005 激光与红外 35 177]

    [7]

    Jiun H H, Ahmad I, Jalar A, Omar G 2006 Microelectron. Reliab. 46 836

    [8]

    Wasmer K, Ballif C, Pouvreau C, Schulz D, Michler J 2008 J. Mater. Process. Technol. 198 114

    [9]

    Schönfelder S, Ebert M, Bagdahn J 2006 Proceedings of EuroSimE, Como, Italy, April 24-26, 2006 p1

    [10]

    Pandolfi A, Weinberg K 2011 Eng. Fract. Mech. 78 2052

    [11]

    Jiang Y T, Tsao S, O'Sullivan T, Razeghi M, Brown G J 2004 Infrared Phys. Techn. 45 143

    [12]

    He Y, Moreira B E, Overson A, Nakamura S H, Bider C, Briscoe J F 2000 Thermochimica Acta. 357-358 1

    [13]

    White G K, Collins J G 1972 J. Low. Temp. Phys. 7 43

    [14]

    Cheng X, Liu C, Silberschmidt V V 2012 Comp. Mater. Sci. 52 274

    [15]

    Chang R W, Patrick M F 2009 J. Electron. Mater. 38 1855

    [16]

    Pau I, Majeed B, Razeeb K M, Barton J 2006 Acta Mater. 54 3991

    [17]

    Hauck T, Bohm C, Müller W H 2005 Proceedings of EuroSimE, Berlin, Germany, April 18-20, 2005 p242

  • [1]

    He L, Yang D J, Ni G Q 2011 Introduction to Advanced Focal Plane Arrays (1st Ed.) (Beijing: National Defence Industry Press) p1 (in Chinese) [何力, 杨定江, 倪国强 2011 先进焦平面技术导论(第1版) (北京:国防工业出版社) 第1页]

    [2]

    Tidrow M Z 2005 Proceedings of SPIE, Bellingham, WA, March 25-28, 2005 p217

    [3]

    Gong H M, Liu D F 2008Infrared Laser Eng. 37 18 (in Chinese) [龚海梅, 刘大福 2008 红外与激光工程 37 18]

    [4]

    Dorn R J, Finger G, Huster G, Lizon J L, Mehrgan H, Meyer M, Stegmeier J, Moorwood A F M 2002 Eur. Southern Observatory. 1 1

    [5]

    Meng Q D, Zhang X L, Zhang L W, Lv Y Q 2012 Acta Phys. Sin. 61 190701 (in Chinese) [孟庆端, 张晓玲, 张立文, 吕衍秋 2012 物理学报 61 190701]

    [6]

    Liu Y D, Du H Y, Zhang G, Dong S, Ma J S 2005 Laser Infrared. 35 177 (in Chinese) [刘豫东, 杜红燕, 张刚, 董硕, 马莒生 2005 激光与红外 35 177]

    [7]

    Jiun H H, Ahmad I, Jalar A, Omar G 2006 Microelectron. Reliab. 46 836

    [8]

    Wasmer K, Ballif C, Pouvreau C, Schulz D, Michler J 2008 J. Mater. Process. Technol. 198 114

    [9]

    Schönfelder S, Ebert M, Bagdahn J 2006 Proceedings of EuroSimE, Como, Italy, April 24-26, 2006 p1

    [10]

    Pandolfi A, Weinberg K 2011 Eng. Fract. Mech. 78 2052

    [11]

    Jiang Y T, Tsao S, O'Sullivan T, Razeghi M, Brown G J 2004 Infrared Phys. Techn. 45 143

    [12]

    He Y, Moreira B E, Overson A, Nakamura S H, Bider C, Briscoe J F 2000 Thermochimica Acta. 357-358 1

    [13]

    White G K, Collins J G 1972 J. Low. Temp. Phys. 7 43

    [14]

    Cheng X, Liu C, Silberschmidt V V 2012 Comp. Mater. Sci. 52 274

    [15]

    Chang R W, Patrick M F 2009 J. Electron. Mater. 38 1855

    [16]

    Pau I, Majeed B, Razeeb K M, Barton J 2006 Acta Mater. 54 3991

    [17]

    Hauck T, Bohm C, Müller W H 2005 Proceedings of EuroSimE, Berlin, Germany, April 18-20, 2005 p242

  • [1] Zhang Xiao-Ling, Meng Qing-Duan, Zhang Li-Wen, Geng Dong-Feng, Lü Yan-Qiu. Deformation modeling of InSb IRFPAs under liquid nitrogen shock. Acta Physica Sinica, 2014, 63(15): 156101. doi: 10.7498/aps.63.156101
    [2] Meng Qing-Duan, Zhang Xiao-Ling, Zhang Li-Wen, Lü Yan-Qiu. Structural modeling of 128× 128 InSb focal plane array detector. Acta Physica Sinica, 2012, 61(19): 190701. doi: 10.7498/aps.61.190701
    [3] Zhang Xiao-Ling, Si Le-Fei, Meng Qing-Duan, Lü Yan-Qiu, Si Jun-Jie. Structural model of InSb IRFPAs including underfill curing process. Acta Physica Sinica, 2017, 66(1): 016102. doi: 10.7498/aps.66.016102
    [4] Gu Wen-Hao, Chang Sheng-Jiang, Fan Fei, Zhang Xuan-Zhou. InSb based subwavelength array for terahertz wave focusing. Acta Physica Sinica, 2016, 65(1): 010701. doi: 10.7498/aps.65.010701
    [5] YU ZHEN-ZHONG, JIN GANG, CHEN XIN-QIANG, MA KE-JUN. ON THE FACETS AND TWIN FORMATION IN THE GROWTH OF InSb SINGLE CRYSTALS. Acta Physica Sinica, 1980, 169(1): 11-18. doi: 10.7498/aps.29.11
    [6] SHU HUNG-DAR, LIN LAN-YING. HEAT TREATMENT OF INDIUM ANTIMONIDE. Acta Physica Sinica, 1966, 131(6): 698-707. doi: 10.7498/aps.22.698
    [7] LIN LAN-YING, SHU HUNG-DAR. THE MECHANICAL DAMAGE OF INDIUM ANTIMONIDE. Acta Physica Sinica, 1964, 105(12): 1268-1277. doi: 10.7498/aps.20.1268
    [8] WU TZU-CHIANG, TANG TING-YUAN. THE NOISE OF THE p-TYPE INDIUM ANTIMONIDE. Acta Physica Sinica, 1966, 127(2): 205-213. doi: 10.7498/aps.22.205
    [9] HUANG CHII-SHENG, TANG TING-YUAN. RECOMBINATION PROCESSES OF CARRIERS IN INDIUM ANTIMONIDE. Acta Physica Sinica, 1965, 121(5): 1038-1048. doi: 10.7498/aps.21.1038
    [10] YU ZHEN-ZHONG, JIN GANG, CHEN XIN-QIANG, MA KE-JUN. ANOMALOUS IMPURITY SEGREGATION IN InSb SINGLE CRYSTALS. Acta Physica Sinica, 1980, 169(1): 19-24. doi: 10.7498/aps.29.19
  • Citation:
Metrics
  • Abstract views:  1544
  • PDF Downloads:  584
  • Cited By: 0
Publishing process
  • Received Date:  01 May 2012
  • Accepted Date:  08 June 2012
  • Published Online:  20 November 2012

Mechanical parameters selection in InSb focal plane array detector normal direction

  • 1. School of Electronic Information Engineering, Henan University of Science and Technology, Luoyang 471003, China;
  • 2. China Airborne Missile Academy, Luoyang 471009, China
Fund Project:  Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No.61107083), the Aero Science Foundation of China (Grant No.20100142003), and the State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, China (Grant No.2012007).

Abstract: In order to learn the effects of front surface structural defects and back surface thinning process on the InSb chip deformation, its elastic modulus along normal direction is reduced in InSb structural modeling, and based on the typical strain character appearing under thermal shock, the mechanical parameter selection basis is deduced in this paper. Simulation results show that when the out-of-plane elastic modulus of InSb chip is set to be 30 percent Young's modulus, both the maximum Von Mises stress and Z component of strain appear in the N electrode zone, and the extremum values present non-continuous distribution. These are in good agreement with fracture origination zone and crack distribution in the fracture statistics results of 128 128 InSb infrared focal plane array under thermal shock. Besides, the region above the indium bump array is convex upward, and the domain above the isolation trough is concave downward, they are also identical with the scenario of Z component of strain in InSb chip under thermal shock. All these results indicate that the Z component of strain criterion can not only predict both crack origination zone and crack distribution, but also support both Z component of strain distribution in the central region and Z component of strain enhancement effect in the InSb chip N electrode zone.

Reference (17)

Catalog

    /

    返回文章
    返回