Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation

Duan Bao-Xing Yang Yin-Tang Kevin J. Chen

Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation

Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen
PDF
Get Citation
  • In order to alleviate the leakage current of AlGaN/GaN High Electron Mobility Transistors (HEMT) device with the N-type GaN buffer, the new Al0.25Ga0.75N/GaN HEMT with the Fluoride ion implantation is proposed for the first time in this paper. Firstly, the output characteristic has the ohmic characteristic for the AlGaN/GaN HEMT without acceptor-type trap, which explains why Fe and Mg are doped into the GaN buffer layer as reported in the literature in theory and simulation. By using the output characteristics of the Ids-Vds for the AlGaN/GaN HEMTs with and without low density drain, the results are obtained that fluoride ion implantation can capture effectively the electrons emitted from the source to reduce the leakage current of the GaN buffer compared with fluoride ions in the gate and the drain regions. The breakdown voltage goes up to 262 V. The scientific basis is set up for desiging the new AlGaN/GaN HEMT with both the low leakage current and the high breakdown voltage.
    • Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61106076), and the State Key Program of National Natural Science of China (Grant No.61234006).
    [1]

    Malinowski P E, Joachim John, Jean Yves Duboz 2009 IEEE Electron Device Lett. 23 1308

    [2]

    Chumbes E M, Schremer A T, Smart J A 2001 IEEE Transactions on Electron Devices 48 420

    [3]

    Song D, Liu J, Cheng Z Q, Wilson C W, Tang K M L, Chen K J 2007 IEEE Electron Device Lett. 28 189

    [4]

    Ando Y, Okamoto Y, Miyamoto H, Nakayama T, Inoue T, Kuzuhara M 2003 IEEE Electron Device Lett. 24 289

    [5]

    Saxler Y F W A, Moore M, Smith R P, Sheppard S, Chavarkar P M, Wisleder U K M, Parikh D P 2004 IEEE Electron Device Lett. 25 117

    [6]

    Hsien C C, Chia S C, Yuan J S 2005 Semicond. Sci. Techno. 20 1183

    [7]

    Tipirneni N, Koudymov A, Adivarahan V, Yang J G S, Asif Khan M 2006 IEEE Electron Device Lett. 27 716

    [8]

    Subramaniam A, Takashi E, Lawrence S and Hiroyasu I 2006 Japanese Journal of Applied Physics 45 L220

    [9]

    Bardwell J A, Haffouz S, McKinnon W R, Storey C, Tang H, Sproule G I, Roth D, Wang R 2007 Electrochemical and Solid-State Letters 10 H46

    [10]

    Arulkumaran S, Liu Z H, Ng G I, Cheong W C, Zeng R, Bu J, Wang H, Radhakrishnan K, Tan C L 2007 Thin Solid Films 515 4517

    [11]

    Arulkumaran S, Egawa T, Ishikawa H, Jimbo T 2003 Appl. Phys. Lett. 82 3110

    [12]

    Chen X B, Johnny K O S 2001 IEEE Trans Electron Devices. 48 344

    [13]

    Sameh G, Nassif K, Salama C A T 2003 IEEE Trans. Electron Devices. 50 1385

    [14]

    Shreepad K, Michael S S, Grigory S 2005 Trans. Electron Devices. 52 2534

    [15]

    Wataru S, Masahiko K, Yoshiharu T 2005 IEEE Trans. Electron Devices 52 106

    [16]

    Duan B X, Yang Y T 2012 Micro & Nano Letter. 7 9

    [17]

    Duan B X, Yang Y T 2012 Sci China Inf Sci. 55 473

    [18]

    Hidetoshi I, Daisuke S, Manabu Y, Yasuhiro U, Hisayoshi M, Tetsuzo U, Tsuyoshi T, Daisuke U 2008 IEEE Electron Device Lett. 29 1087

    [19]

    Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Device Lett. 30 1329

    [20]

    Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Device Lett. 30 305

    [21]

    Duan B X, Yang Y T 2011 IEEE Trans. Electron Devices 58 2057

    [22]

    Duan B X, Yang Y T, Zhang B 2010 Solid-State Electronics 54 685

    [23]

    Shreepad K, Deng J Y, Michael S S, Remis G 2001 IEEE Electron Device Lett. 22 373

    [24]

    Heikman S, Keller S, DenBaars S P, Mishra U K 2002 Appl. Phys. Lett. 81 439

    [25]

    Tang H, Webb J B, Bardwell J A, Raymond S, Salzman J, Uzan-Saguy C 2001 Appl. Phys. Lett. 78 757

    [26]

    Webb J B, Tang H, Rolfe S, Bardwell J A 1999 Appl. Phys. Lett. 75 953

    [27]

    Katzer D S, Storm D F, Binari S C, Roussos J A, Shanabrook B V, Glaser E R 2003 J. Cryst. Growth. 251 481

    [28]

    Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra U K, Speck J S 2004 J. Vac. Sci. Technol. B 22 114

  • [1]

    Malinowski P E, Joachim John, Jean Yves Duboz 2009 IEEE Electron Device Lett. 23 1308

    [2]

    Chumbes E M, Schremer A T, Smart J A 2001 IEEE Transactions on Electron Devices 48 420

    [3]

    Song D, Liu J, Cheng Z Q, Wilson C W, Tang K M L, Chen K J 2007 IEEE Electron Device Lett. 28 189

    [4]

    Ando Y, Okamoto Y, Miyamoto H, Nakayama T, Inoue T, Kuzuhara M 2003 IEEE Electron Device Lett. 24 289

    [5]

    Saxler Y F W A, Moore M, Smith R P, Sheppard S, Chavarkar P M, Wisleder U K M, Parikh D P 2004 IEEE Electron Device Lett. 25 117

    [6]

    Hsien C C, Chia S C, Yuan J S 2005 Semicond. Sci. Techno. 20 1183

    [7]

    Tipirneni N, Koudymov A, Adivarahan V, Yang J G S, Asif Khan M 2006 IEEE Electron Device Lett. 27 716

    [8]

    Subramaniam A, Takashi E, Lawrence S and Hiroyasu I 2006 Japanese Journal of Applied Physics 45 L220

    [9]

    Bardwell J A, Haffouz S, McKinnon W R, Storey C, Tang H, Sproule G I, Roth D, Wang R 2007 Electrochemical and Solid-State Letters 10 H46

    [10]

    Arulkumaran S, Liu Z H, Ng G I, Cheong W C, Zeng R, Bu J, Wang H, Radhakrishnan K, Tan C L 2007 Thin Solid Films 515 4517

    [11]

    Arulkumaran S, Egawa T, Ishikawa H, Jimbo T 2003 Appl. Phys. Lett. 82 3110

    [12]

    Chen X B, Johnny K O S 2001 IEEE Trans Electron Devices. 48 344

    [13]

    Sameh G, Nassif K, Salama C A T 2003 IEEE Trans. Electron Devices. 50 1385

    [14]

    Shreepad K, Michael S S, Grigory S 2005 Trans. Electron Devices. 52 2534

    [15]

    Wataru S, Masahiko K, Yoshiharu T 2005 IEEE Trans. Electron Devices 52 106

    [16]

    Duan B X, Yang Y T 2012 Micro & Nano Letter. 7 9

    [17]

    Duan B X, Yang Y T 2012 Sci China Inf Sci. 55 473

    [18]

    Hidetoshi I, Daisuke S, Manabu Y, Yasuhiro U, Hisayoshi M, Tetsuzo U, Tsuyoshi T, Daisuke U 2008 IEEE Electron Device Lett. 29 1087

    [19]

    Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Device Lett. 30 1329

    [20]

    Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Device Lett. 30 305

    [21]

    Duan B X, Yang Y T 2011 IEEE Trans. Electron Devices 58 2057

    [22]

    Duan B X, Yang Y T, Zhang B 2010 Solid-State Electronics 54 685

    [23]

    Shreepad K, Deng J Y, Michael S S, Remis G 2001 IEEE Electron Device Lett. 22 373

    [24]

    Heikman S, Keller S, DenBaars S P, Mishra U K 2002 Appl. Phys. Lett. 81 439

    [25]

    Tang H, Webb J B, Bardwell J A, Raymond S, Salzman J, Uzan-Saguy C 2001 Appl. Phys. Lett. 78 757

    [26]

    Webb J B, Tang H, Rolfe S, Bardwell J A 1999 Appl. Phys. Lett. 75 953

    [27]

    Katzer D S, Storm D F, Binari S C, Roussos J A, Shanabrook B V, Glaser E R 2003 J. Cryst. Growth. 251 481

    [28]

    Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra U K, Speck J S 2004 J. Vac. Sci. Technol. B 22 114

  • [1] Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan. Study of high breakdown-voltage AlGaN/GaN FP-HEMT. Acta Physica Sinica, 2007, 56(5): 2895-2899. doi: 10.7498/aps.56.2895
    [2] Duan Bao-Xing, Yang Yin-Tang. Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers. Acta Physica Sinica, 2014, 63(5): 057302. doi: 10.7498/aps.63.057302
    [3] Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke. The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors. Acta Physica Sinica, 2011, 60(4): 047101. doi: 10.7498/aps.60.047101
    [4] Wang Xin-Hua, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Zheng Ying-Kui, Wei Ke, Liu Xin-Yu. Investigation on trap by the gate fringecapacitance in GaN HEMT. Acta Physica Sinica, 2011, 60(9): 097101. doi: 10.7498/aps.60.097101
    [5] Yuan Song, Duan Bao-Xing, Yuan Xiao-Ning, Ma Jian-Chong, Li Chun-Lai, Cao Zhen, Guo Hai-Jun, Yang Yin-Tang. Experimental research on the new Al0.25Ga0.75N/GaN HEMTs with a step AlGaN layer. Acta Physica Sinica, 2015, 64(23): 237302. doi: 10.7498/aps.64.237302
    [6] Fan Long, Hao Yue. The effect of radiation induced strain relaxation on electric performance of AlmGa1-mN/GaN HEMT. Acta Physica Sinica, 2007, 56(6): 3393-3399. doi: 10.7498/aps.56.3393
    [7] Wei Wei, Hao Yue, Feng Qian, Zhang Jin-Cheng, Zhang Jin-Feng. Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistor. Acta Physica Sinica, 2008, 57(4): 2456-2461. doi: 10.7498/aps.57.2456
    [8] Liu Lin-Jie, Yue Yuan-Zheng, Zhang Jin-Cheng, Ma Xiao-Hua, Dong Zuo-Dian, Hao Yue. Temperature characteristics of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric. Acta Physica Sinica, 2009, 58(1): 536-540. doi: 10.7498/aps.58.536
    [9] Wang Chong, Quan Si, Zhang Jin-Feng, Hao Yue, Feng Qian, Chen Jun-Feng. Simulation and experimental investigation of recessed-gate AlGaN/GaN HEMT. Acta Physica Sinica, 2009, 58(3): 1966-1970. doi: 10.7498/aps.58.1966
    [10] Zhu Yan-Xu, Cao Wei-Wei, Xu Chen, Deng Ye, Zou De-Shu. Effect of different ohmic contact pattern on GaN HEMT electrical properties. Acta Physica Sinica, 2014, 63(11): 117302. doi: 10.7498/aps.63.117302
  • Citation:
Metrics
  • Abstract views:  3905
  • PDF Downloads:  629
  • Cited By: 0
Publishing process
  • Received Date:  23 April 2012
  • Accepted Date:  18 June 2012
  • Published Online:  20 November 2012

Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation

  • 1. Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, XidianUniversity, Xi’an 710071, China;
  • 2. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
Fund Project:  Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61106076), and the State Key Program of National Natural Science of China (Grant No.61234006).

Abstract: In order to alleviate the leakage current of AlGaN/GaN High Electron Mobility Transistors (HEMT) device with the N-type GaN buffer, the new Al0.25Ga0.75N/GaN HEMT with the Fluoride ion implantation is proposed for the first time in this paper. Firstly, the output characteristic has the ohmic characteristic for the AlGaN/GaN HEMT without acceptor-type trap, which explains why Fe and Mg are doped into the GaN buffer layer as reported in the literature in theory and simulation. By using the output characteristics of the Ids-Vds for the AlGaN/GaN HEMTs with and without low density drain, the results are obtained that fluoride ion implantation can capture effectively the electrons emitted from the source to reduce the leakage current of the GaN buffer compared with fluoride ions in the gate and the drain regions. The breakdown voltage goes up to 262 V. The scientific basis is set up for desiging the new AlGaN/GaN HEMT with both the low leakage current and the high breakdown voltage.

Reference (28)

Catalog

    /

    返回文章
    返回