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Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy

Hu Yi-Bin Hao Zhi-Biao Hu Jian-Nan Niu Lang Wang Lai Luo Yi

Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy

Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi
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  • Received Date:  19 April 2012
  • Accepted Date:  28 June 2012
  • Published Online:  05 December 2012

Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy

  • 1. Tsinghua National Laboratory for Information Science and Technology Deptment of Electronic Engineering, Tsinghua University, Beijing 100084, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 61176015, 61176059, 60723002, 60977022, 51002085), the National Basic Research Program of China (Grant Nos. 2011CB301902, 2011CB301903), and the National High Technology Research and Development Program of China (Grant Nos. 2011AA03A112, 2011AA03A106, 2011AA03A105).

Abstract: In this article we report on the green-light wavelength InGaN/AlN quantum dots (QDs) grown by molecular beam epitaxy, and propose a method to determine the composition of the InGaN QDs by combining reflection high-energy electron diffraction in-situ measurement and photoluminescence measurement, in which the strain relaxation and the influences of strain and quantum-confined Stark effect on the exciton energy are taken into consideration.

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