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Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistor

Zhang Bin Yang Yin-Tang Li Yue-Jin Xu Xiao-Bo

Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistor

Zhang Bin, Yang Yin-Tang, Li Yue-Jin, Xu Xiao-Bo
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  • The paper deals with the design optimization of SiGe heterojunction bipolar transistor (HBT) on thin film silicon-on-insulator (SOI). The basic DC and AC current characteristics are obtained and the differences between the SOI and bulk SiGe HBT are analyzed. As the incorporation of SOI substrate makes the SOI SiGe HBT a four-terminal device, the influences of the substrate bias on Gummel plot, output current and avalanche current are studied emphatically. Finally, the physical parameters of material and geometric parameters of the device are discussed by changing the frequency characteristics. Compared with the bulk counterpart, the SOI SiGe HBT is designed and fabricated with a great degree of freedom for better performance. This systematic analysis of SOI SiGe HBT provides a valuable reference for the SOI SiGe BiCMOS circuit design and simulation.
    • Funds: Project supported by the Pre-research Foundation from the National Ministries and Commissions of China (Grant Nos. 51308030201, 9140A080509DZ0106).
    [1]

    Cressler J, Niu G 2003 Silicon-Germanium Heterojunction Bipolar Transistors (London: Artech House) p12

    [2]

    Fleetwood D M, Thome F V, Tsao S S, Dressendorfer P V, Dandini V J, Schwank J R 1988 IEEE Transactions Nuclear Science 35 1099

    [3]

    Washio K, Ohue E, Shimamoto H, Oda K, Hayami R, Kiyota Y, Tanabe M, Kondo M, Hashimoto T, Harada T 2002 IEEE Transactions on Electron Devices 49 271

    [4]

    Sato F, Hashimoto T, Tezuka H, Soda M, Suzaki T, Tatsumi T, Tashiro T 1999 IEEE Transactions Electron Devices 46 1332

    [5]

    Sato F, Hashimoto T, Tatsumi T, Tashiro T 1995 IEEE Transactions on Electron Devices 42 483

    [6]

    Sugiyama M, Shimizu T, Takemura H, Yoshino A, Oda N, Tashiro T, Minato Y, Takahashi Y, Nakamae M 1989 1989 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.89CH2694-8) Tokyo, Japan 22-25 May 1989 p59

    [7]

    Cai J, Ajmera A, Ouyang C, Oldiges P, Steigerwalt M, Stein K, Jenkins K, Shahidi G, Ning T 2002 VLSI Technology, 2002. Digest of Technical Papers 2002 p172

    [8]

    Ouyang Q C, Cai J, Ning T, Oldiges P, Johnson J B 2002 Bipolar/BiCMOS Circuits and Technology Meeting 2002 p28

    [9]

    Bellini M, Cressler J D, Jin C 2007 Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE September 30 2007-October 2, 2007 p234

    [10]

    Jin C, Ning T H 2004 Solid-State and Integrated Circuits Technology, 2004 Proceedings, 7th International Conference Oct. 18-21 2004 p2102

    [11]

    Tianbing C, Sutton A K, Bellini M, Haugerud B M, Comeau J P, Qingqing L, Cressler J D, Jin C, Ning T H, Marshall P W, Marshall C J 2005 IEEE Transactions on Nuclear Science 52 2353

    [12]

    Bellini M, Tianbing C, Chendong Z, Cressler J D, Jin C 2006 Bipolar/BiCMOS Circuits and Technology Meeting, 2006 Oct. 8-10 2006 p1

    [13]

    Qiqing O, Kai X 2005 Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference Sept. 01-03 2005 p55

    [14]

    Tianhing C, Bellini M, Zhao E, Comeau J P, Sutton A K, Grens C M, Cressler J D, Jin C, Ning T H 2005 Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Oct. 9-11 2005 p256

    [15]

    Bellini M, Jun B, Chen T, Cressler J D, Marshall P W, Chen D, Schrimpf R D, Fleetwood D M, Cai J 2006 IEEE Transactions on Nuclear Science 53 3182

    [16]

    Avenier G, Schwartzmann T, Chevalier P, Vandelle B, Rubaldo L, Dutartre D, Boissonnet L, Saguin F, Pantel R, Fregonese S, Maneux C, Zimmer T, Chantre A 2005 Bipolar/BiCMOS Circuits and Technology Meeting, 2005 Oct. 9-11 2005 p128

    [17]

    Boissonnet L, Judong F, Vandelle B, Rubaldo L, Bouillon P, Dutartre D, Perrotin A, Avenier G, Chevalier P, Chantre A, Rauber B 2006 Bipolar/BiCMOS Circuits and Technology Meeting 2006 Oct. 8-10 2006 p1

    [18]

    Chantre A, Avenier G, Chevalier P, Vandelle B, Saguin F, Maneux C, Dutartre D, Zimmer T 2006 Third International SiGe Technology and Device Meeting, ISTDM 2006. p1

    [19]

    Duvernay J, Brossard F, Borot G, Boissonnet L, Vandelle B, Rubaldo L, Deleglise F, Avenier G, Chevalier P, Rauber B, Dutartre D, Chantre A 2007 Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE Sept. 30-Oct. 2 2007 p34

    [20]

    Bellini M, Phillips S D, Diestelhorst R M, Cheng P, Cressler J D, Marshall P W, Turowski M, Avenier G, Chantre A, Chevalier P 2008 IEEE Transactions on Nuclear Science 55 3197

    [21]

    Avenier G, Fregonese S, Chevalier P, Bustos J, Saguin F, Schwartzmann T, Maneux C, Zimmer T, Chantre A 2008 IEEE Transactions on Electron Devices 55 585

    [22]

    Peng C, Seth S, Cressler J D, Cestra G, Krakowski T, Babcock J A, Buchholz A 2011 IEEE Transactions on Electron Devices 58 2573

    [23]

    Hermann P, Hecker M, Renn F, Rlke M, Kolanek K, Rinderknecht J, Eng L M 2011 J. Appl. Phys. 109

    [24]

    Babcock J A, Sadovnikov A, Choi L J, van Noort W, Allard P, Cestra G 2011 2011 25th IEEE Bipolar/BiCMOS Technology and Circuits Meeting, BCTM 2011, Atlanta, GA, United states Oct. 9, -Oct. 11, 2011 p9

    [25]

    Xu X B, Zhang H M, Hu H Y, Xu L J, Ma J L 2011 Acta Phys. Sin. 60 078502 (in Chinese) [徐小波, 张鹤鸣, 胡辉勇, 许立军, 马建立 2011 物理学报 60 078502]

    [26]

    Xu X B, Zhang H M, Hu H Y, Qu J T 2011 Chin. Phys. B 20 058503

    [27]

    Xu X B, Zhang H M, Hu H Y, Ma J L, Xu L J 2011 Chin. Phys. B 20 018502

    [28]

    Xu X B, Zhang H M, Hu H Y, Ma J L 2011 Chin. Phys. B 20 058502

    [29]

    Xu X B, Zhang H M, Hu H Y, Li Y C, Qu J T 2011 Chin. Phys. B 20 108502

    [30]

    Xu X B, Zhang H M 2011 Chin. Phys. Lett. 28 078505

    [31]

    Xu X B, Xu K X, Zhang H M, Qin S S 2011 Chin. Phys. B 20 098501

    [32]

    Fregonese S, Avenier G, Maneux C, Chantre A, Zimmer T 2006 IEEE Transactions on Electron Devices 53 296

    [33]

    Kroemer H 1985 Solid-State Electronics 28 1101

    [34]

    Slotboom J W, Graaff H C 1977 IEEE Transactions on Electron Devices 24 1123

    [35]

    Fossum J G, Lee D S 1982 Solid-State Electronics 25 741

    [36]

    Fossum J G, Mertens R P, Lee D S, Nijs J F 1983 Solid-State Electronics 26 569

    [37]

    Klaassen D B M 1992 Solid-State Electronics 35 953

  • [1]

    Cressler J, Niu G 2003 Silicon-Germanium Heterojunction Bipolar Transistors (London: Artech House) p12

    [2]

    Fleetwood D M, Thome F V, Tsao S S, Dressendorfer P V, Dandini V J, Schwank J R 1988 IEEE Transactions Nuclear Science 35 1099

    [3]

    Washio K, Ohue E, Shimamoto H, Oda K, Hayami R, Kiyota Y, Tanabe M, Kondo M, Hashimoto T, Harada T 2002 IEEE Transactions on Electron Devices 49 271

    [4]

    Sato F, Hashimoto T, Tezuka H, Soda M, Suzaki T, Tatsumi T, Tashiro T 1999 IEEE Transactions Electron Devices 46 1332

    [5]

    Sato F, Hashimoto T, Tatsumi T, Tashiro T 1995 IEEE Transactions on Electron Devices 42 483

    [6]

    Sugiyama M, Shimizu T, Takemura H, Yoshino A, Oda N, Tashiro T, Minato Y, Takahashi Y, Nakamae M 1989 1989 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.89CH2694-8) Tokyo, Japan 22-25 May 1989 p59

    [7]

    Cai J, Ajmera A, Ouyang C, Oldiges P, Steigerwalt M, Stein K, Jenkins K, Shahidi G, Ning T 2002 VLSI Technology, 2002. Digest of Technical Papers 2002 p172

    [8]

    Ouyang Q C, Cai J, Ning T, Oldiges P, Johnson J B 2002 Bipolar/BiCMOS Circuits and Technology Meeting 2002 p28

    [9]

    Bellini M, Cressler J D, Jin C 2007 Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE September 30 2007-October 2, 2007 p234

    [10]

    Jin C, Ning T H 2004 Solid-State and Integrated Circuits Technology, 2004 Proceedings, 7th International Conference Oct. 18-21 2004 p2102

    [11]

    Tianbing C, Sutton A K, Bellini M, Haugerud B M, Comeau J P, Qingqing L, Cressler J D, Jin C, Ning T H, Marshall P W, Marshall C J 2005 IEEE Transactions on Nuclear Science 52 2353

    [12]

    Bellini M, Tianbing C, Chendong Z, Cressler J D, Jin C 2006 Bipolar/BiCMOS Circuits and Technology Meeting, 2006 Oct. 8-10 2006 p1

    [13]

    Qiqing O, Kai X 2005 Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference Sept. 01-03 2005 p55

    [14]

    Tianhing C, Bellini M, Zhao E, Comeau J P, Sutton A K, Grens C M, Cressler J D, Jin C, Ning T H 2005 Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Oct. 9-11 2005 p256

    [15]

    Bellini M, Jun B, Chen T, Cressler J D, Marshall P W, Chen D, Schrimpf R D, Fleetwood D M, Cai J 2006 IEEE Transactions on Nuclear Science 53 3182

    [16]

    Avenier G, Schwartzmann T, Chevalier P, Vandelle B, Rubaldo L, Dutartre D, Boissonnet L, Saguin F, Pantel R, Fregonese S, Maneux C, Zimmer T, Chantre A 2005 Bipolar/BiCMOS Circuits and Technology Meeting, 2005 Oct. 9-11 2005 p128

    [17]

    Boissonnet L, Judong F, Vandelle B, Rubaldo L, Bouillon P, Dutartre D, Perrotin A, Avenier G, Chevalier P, Chantre A, Rauber B 2006 Bipolar/BiCMOS Circuits and Technology Meeting 2006 Oct. 8-10 2006 p1

    [18]

    Chantre A, Avenier G, Chevalier P, Vandelle B, Saguin F, Maneux C, Dutartre D, Zimmer T 2006 Third International SiGe Technology and Device Meeting, ISTDM 2006. p1

    [19]

    Duvernay J, Brossard F, Borot G, Boissonnet L, Vandelle B, Rubaldo L, Deleglise F, Avenier G, Chevalier P, Rauber B, Dutartre D, Chantre A 2007 Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE Sept. 30-Oct. 2 2007 p34

    [20]

    Bellini M, Phillips S D, Diestelhorst R M, Cheng P, Cressler J D, Marshall P W, Turowski M, Avenier G, Chantre A, Chevalier P 2008 IEEE Transactions on Nuclear Science 55 3197

    [21]

    Avenier G, Fregonese S, Chevalier P, Bustos J, Saguin F, Schwartzmann T, Maneux C, Zimmer T, Chantre A 2008 IEEE Transactions on Electron Devices 55 585

    [22]

    Peng C, Seth S, Cressler J D, Cestra G, Krakowski T, Babcock J A, Buchholz A 2011 IEEE Transactions on Electron Devices 58 2573

    [23]

    Hermann P, Hecker M, Renn F, Rlke M, Kolanek K, Rinderknecht J, Eng L M 2011 J. Appl. Phys. 109

    [24]

    Babcock J A, Sadovnikov A, Choi L J, van Noort W, Allard P, Cestra G 2011 2011 25th IEEE Bipolar/BiCMOS Technology and Circuits Meeting, BCTM 2011, Atlanta, GA, United states Oct. 9, -Oct. 11, 2011 p9

    [25]

    Xu X B, Zhang H M, Hu H Y, Xu L J, Ma J L 2011 Acta Phys. Sin. 60 078502 (in Chinese) [徐小波, 张鹤鸣, 胡辉勇, 许立军, 马建立 2011 物理学报 60 078502]

    [26]

    Xu X B, Zhang H M, Hu H Y, Qu J T 2011 Chin. Phys. B 20 058503

    [27]

    Xu X B, Zhang H M, Hu H Y, Ma J L, Xu L J 2011 Chin. Phys. B 20 018502

    [28]

    Xu X B, Zhang H M, Hu H Y, Ma J L 2011 Chin. Phys. B 20 058502

    [29]

    Xu X B, Zhang H M, Hu H Y, Li Y C, Qu J T 2011 Chin. Phys. B 20 108502

    [30]

    Xu X B, Zhang H M 2011 Chin. Phys. Lett. 28 078505

    [31]

    Xu X B, Xu K X, Zhang H M, Qin S S 2011 Chin. Phys. B 20 098501

    [32]

    Fregonese S, Avenier G, Maneux C, Chantre A, Zimmer T 2006 IEEE Transactions on Electron Devices 53 296

    [33]

    Kroemer H 1985 Solid-State Electronics 28 1101

    [34]

    Slotboom J W, Graaff H C 1977 IEEE Transactions on Electron Devices 24 1123

    [35]

    Fossum J G, Lee D S 1982 Solid-State Electronics 25 741

    [36]

    Fossum J G, Mertens R P, Lee D S, Nijs J F 1983 Solid-State Electronics 26 569

    [37]

    Klaassen D B M 1992 Solid-State Electronics 35 953

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  • Received Date:  18 May 2012
  • Accepted Date:  17 June 2012
  • Published Online:  05 December 2012

Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistor

  • 1. Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
Fund Project:  Project supported by the Pre-research Foundation from the National Ministries and Commissions of China (Grant Nos. 51308030201, 9140A080509DZ0106).

Abstract: The paper deals with the design optimization of SiGe heterojunction bipolar transistor (HBT) on thin film silicon-on-insulator (SOI). The basic DC and AC current characteristics are obtained and the differences between the SOI and bulk SiGe HBT are analyzed. As the incorporation of SOI substrate makes the SOI SiGe HBT a four-terminal device, the influences of the substrate bias on Gummel plot, output current and avalanche current are studied emphatically. Finally, the physical parameters of material and geometric parameters of the device are discussed by changing the frequency characteristics. Compared with the bulk counterpart, the SOI SiGe HBT is designed and fabricated with a great degree of freedom for better performance. This systematic analysis of SOI SiGe HBT provides a valuable reference for the SOI SiGe BiCMOS circuit design and simulation.

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