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Amending the ferromagnetic properties of Ga0.94Mn0.06As films by He+ irradiation

Ding Bin-Feng Xiang Feng-Hua Wang Li-Ming Wang Hong-Tao

Amending the ferromagnetic properties of Ga0.94Mn0.06As films by He+ irradiation

Ding Bin-Feng, Xiang Feng-Hua, Wang Li-Ming, Wang Hong-Tao
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  • Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in Ga0.94Mn0.06As films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated Ga0.94Mn0.06As layers indicates that the controlled amending of magnetism results from a compensation of holes by generated electrical defects and not from a structural modification.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos.10875004, 11005005), and the National Basic Research Program of China (Grant No. 2010CB832904).
    [1]

    Fassbender, McCord J 2008 J. Magn. Magn. Mater. 320 579

    [2]

    Chappert C, Bernas H, Ferré J, Kottler V, Jamet J P, Chen Y, Cambril E, Devolder T, Rousseaux F, Mathet V, Launois H 1998 Science 280 1919

    [3]

    Matsukura F, Ohno H, Shen A, Sugawara Y 1998 Phys. Rev. B 57 R2037

    [4]

    Xu Z F, Liu L L, Zhao Y T, Chen L, Zhu J, Wang Y Y, Xiao G Q 2008 Acta Phys. Sin. 57 3833 (in Chinese) [徐忠锋,刘丽莉,赵永涛, 陈亮,朱键,王瑜玉, 肖国青 2008 物理学报 57 3833]]

    [5]

    Ma Y G, He G W, Hu G, Chen Y, Duan X F 2001 Acta Phys. Sin. 51 620 (in Chinese) [马余刚, 何国伟, 胡岗, 陈一, 段晓峰 2002 物理学报 100 620]

    [6]

    Dietl T, Ohno H 2001 Physica E 9 185

    [7]

    Jungwirth T, Sinova J, Mašek J, Kučra J, MacDonald A H 2006 Rev. Mod. Phys. 78 809

    [8]

    Yamanouchi M, Chiba D, Matsukura F, Ohno H 2004 Nature 428 539

    [9]

    Hümpfner S, Sawicki M, Pappert K,Wenisch J, Brunner K, Gould C, Schmidt G, Dietl T, Molenkamp L W 2007 Appl. Phys. Lett. 90 102102

    [10]

    Wunderlich J, Irvine A C, Zemen J, Holy V, Rushforth A W, De Ranieri E, Rana U, Vyborny K, Sinova J, Foxon C T, Campion R P, Williams D A, Gallagher B L, Jungwirth T 2007 Phys. Rev. B 76 054424

    [11]

    Pearton S J 1990 Mater. Sci. Rep. 4 313

    [12]

    Deenapanray P N K, Gao Q, Jagadish C 2003 J. Appl. Phys. 93 9123

    [13]

    Dietl T, Ohno H, Matsukura F, Cibert J, Ferr D 2000 Science 287 1019

    [14]

    Thevenard L,Mauguin O, Largeau L, Theys B, Lema?itre A 2005 Appl. Phys. Lett. 87 182506

    [15]

    Thevenard L, Largeau L, Mauguin O, Lema?itre A, Khazen Kh, Bardeleben H J 2007 Phys. Rev. B 75 195218

    [16]

    Van Esch A, Van Bockstal L, De Boeck J, Verbanck G, Steenbergen A S,Wellmann P J, Grietens B, Bogaerts R, Herlach F, Borghs G 1997 Phys. Rev. B 56 13103

    [17]

    Yoon I T, Kang T W, Kim K H, Kim D J 2005 J. Appl. Phys. 97 063902

    [18]

    Oiwa A, Katsumoto S, Endo A, Hirasawa M, Iye Y, Ohno H, Matsukura F, Shen A, Sugawara Y 1997 Solid State Commun. 103 209

    [19]

    Omiya T, Matsukura F, Dietl T, Ohno Y, Sakon T, Motokawa M, Ohno H 2000 Physica E 7 976

    [20]

    Wang K Y, Edmonds K W, Campion R P, Zhao L X, Foxon C T, Gallagher B L 2005 Phys. Rev. B 72 085201

    [21]

    Iye Y, Oiwa A, Endo A, Katsumoto S,Matsukura F, Shen A, Ohno H, Munekata H 1999 Mater. Sci. Eng. B 63 88

    [22]

    Edmonds K W, Campion R P, Wang K -Y, Neumann A C, Gallagher B L, Foxon C T, Main P C 2003 J. Appl. Phys. 93 6787

    [23]

    Ziegler J F, Biersack J P, Littmark U 1985 The Stopping, Range of Ions in Solids, Pergamon, New York

    [24]

    Carmeli I, Bloom F, Gwinn E G, Kreutz T C, Scoby C, Gossard A C 2006 Appl. Phys. Lett. 89 112508

    [25]

    Kreutz T C, Artzi R, Gwinn E G, Naaman R, Pizem H, Sukenik C N 2003 Appl. Phys. Lett. 83 4211-3

    [26]

    Wang B, Zhao YW, Dong Z Y, Deng A H,Miao S S, Yang J 2007 Acta Phys. Sin. 56 1603 (in Chinese) [王博, 赵有文, 董志远, 邓爱红, 苗杉杉, 杨 俊 2007 物理学报 56 1603]

  • [1]

    Fassbender, McCord J 2008 J. Magn. Magn. Mater. 320 579

    [2]

    Chappert C, Bernas H, Ferré J, Kottler V, Jamet J P, Chen Y, Cambril E, Devolder T, Rousseaux F, Mathet V, Launois H 1998 Science 280 1919

    [3]

    Matsukura F, Ohno H, Shen A, Sugawara Y 1998 Phys. Rev. B 57 R2037

    [4]

    Xu Z F, Liu L L, Zhao Y T, Chen L, Zhu J, Wang Y Y, Xiao G Q 2008 Acta Phys. Sin. 57 3833 (in Chinese) [徐忠锋,刘丽莉,赵永涛, 陈亮,朱键,王瑜玉, 肖国青 2008 物理学报 57 3833]]

    [5]

    Ma Y G, He G W, Hu G, Chen Y, Duan X F 2001 Acta Phys. Sin. 51 620 (in Chinese) [马余刚, 何国伟, 胡岗, 陈一, 段晓峰 2002 物理学报 100 620]

    [6]

    Dietl T, Ohno H 2001 Physica E 9 185

    [7]

    Jungwirth T, Sinova J, Mašek J, Kučra J, MacDonald A H 2006 Rev. Mod. Phys. 78 809

    [8]

    Yamanouchi M, Chiba D, Matsukura F, Ohno H 2004 Nature 428 539

    [9]

    Hümpfner S, Sawicki M, Pappert K,Wenisch J, Brunner K, Gould C, Schmidt G, Dietl T, Molenkamp L W 2007 Appl. Phys. Lett. 90 102102

    [10]

    Wunderlich J, Irvine A C, Zemen J, Holy V, Rushforth A W, De Ranieri E, Rana U, Vyborny K, Sinova J, Foxon C T, Campion R P, Williams D A, Gallagher B L, Jungwirth T 2007 Phys. Rev. B 76 054424

    [11]

    Pearton S J 1990 Mater. Sci. Rep. 4 313

    [12]

    Deenapanray P N K, Gao Q, Jagadish C 2003 J. Appl. Phys. 93 9123

    [13]

    Dietl T, Ohno H, Matsukura F, Cibert J, Ferr D 2000 Science 287 1019

    [14]

    Thevenard L,Mauguin O, Largeau L, Theys B, Lema?itre A 2005 Appl. Phys. Lett. 87 182506

    [15]

    Thevenard L, Largeau L, Mauguin O, Lema?itre A, Khazen Kh, Bardeleben H J 2007 Phys. Rev. B 75 195218

    [16]

    Van Esch A, Van Bockstal L, De Boeck J, Verbanck G, Steenbergen A S,Wellmann P J, Grietens B, Bogaerts R, Herlach F, Borghs G 1997 Phys. Rev. B 56 13103

    [17]

    Yoon I T, Kang T W, Kim K H, Kim D J 2005 J. Appl. Phys. 97 063902

    [18]

    Oiwa A, Katsumoto S, Endo A, Hirasawa M, Iye Y, Ohno H, Matsukura F, Shen A, Sugawara Y 1997 Solid State Commun. 103 209

    [19]

    Omiya T, Matsukura F, Dietl T, Ohno Y, Sakon T, Motokawa M, Ohno H 2000 Physica E 7 976

    [20]

    Wang K Y, Edmonds K W, Campion R P, Zhao L X, Foxon C T, Gallagher B L 2005 Phys. Rev. B 72 085201

    [21]

    Iye Y, Oiwa A, Endo A, Katsumoto S,Matsukura F, Shen A, Ohno H, Munekata H 1999 Mater. Sci. Eng. B 63 88

    [22]

    Edmonds K W, Campion R P, Wang K -Y, Neumann A C, Gallagher B L, Foxon C T, Main P C 2003 J. Appl. Phys. 93 6787

    [23]

    Ziegler J F, Biersack J P, Littmark U 1985 The Stopping, Range of Ions in Solids, Pergamon, New York

    [24]

    Carmeli I, Bloom F, Gwinn E G, Kreutz T C, Scoby C, Gossard A C 2006 Appl. Phys. Lett. 89 112508

    [25]

    Kreutz T C, Artzi R, Gwinn E G, Naaman R, Pizem H, Sukenik C N 2003 Appl. Phys. Lett. 83 4211-3

    [26]

    Wang B, Zhao YW, Dong Z Y, Deng A H,Miao S S, Yang J 2007 Acta Phys. Sin. 56 1603 (in Chinese) [王博, 赵有文, 董志远, 邓爱红, 苗杉杉, 杨 俊 2007 物理学报 56 1603]

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  • Received Date:  19 August 2011
  • Accepted Date:  21 October 2011
  • Published Online:  15 April 2012

Amending the ferromagnetic properties of Ga0.94Mn0.06As films by He+ irradiation

  • 1. Department of Physics and Electronic Information, Langfang Teachers College, Langfang 065000, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos.10875004, 11005005), and the National Basic Research Program of China (Grant No. 2010CB832904).

Abstract: Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in Ga0.94Mn0.06As films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated Ga0.94Mn0.06As layers indicates that the controlled amending of magnetism results from a compensation of holes by generated electrical defects and not from a structural modification.

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