Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Study of growth of [111]-oriented CdTe thin films by MBE

Zhang Bing-Po Cai Chun-Feng Cai Xi-Kun Wu Hui-Zhen Wang Miao

Study of growth of [111]-oriented CdTe thin films by MBE

Zhang Bing-Po, Cai Chun-Feng, Cai Xi-Kun, Wu Hui-Zhen, Wang Miao
PDF
Get Citation
  • In this study, CdTe(111) thin films were epitaxially grown on freshly cleaved BaF2 substrate using molecular beam epitaxy (MBE). In situ characterization of reflection high energy electron diffraction (RHEED) reveals the growth mode of transition from 2D to 3D. XRD analysis results verify the single crystalline property of the as-grown films. Theoretical method is adopted to fit the measured near infrared transmission spectrum, revealing a CdTe energy gap of 1.511 eV at room temperature.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 10974174, 91021020), and the Natural Science Foundation of Zhejiang Province, China(Grant Nos.Z6100117, Z111057).
    [1]

    Sporken R, Sivananthan S,Mahavadi K K,Monfroy G, Boukerche M, Faurie J P 1989 Appl. Phys. Lett. 55 1879

    [2]

    Datta S, Furdyna J K, Gunshor R L 1985 Supperlatt.Microstruct. 1 327

    [3]

    Britt J, Ferekidis C 1993 Appl. Phys. Lett. 62 2851

    [4]

    Romeo N, Basio A, Tedeschi R, Canevari V 2000 Mater. Chem. Phys. 66 201

    [5]

    Wu X Z 2004 Sol. Energy. 77 803

    [6]

    Novruzov V D, Fathi N M, Gorur1 O, Tomakin M, Bayramov A I, Schorr S, Mamedov N 2010 Phys. Status Solidi A207 3 730

    [7]

    Li Y J, Zheng J G, Feng L H, Li B, Zeng G G, Cai Y P, Zhang J Q, Li W, Lei Z, Wu L L, Cai W 2010 Acta Phys. Sin. 59 0625 ( in Chinese) [李愿杰, 郑家贵, 冯良桓, 黎兵, 曾广根, 蔡亚平, 张静全, 李卫, 雷智, 武莉莉, 蔡伟 2010 物理学报 59 0625]

    [8]

    Kazuto Koike, Takanori Hotei, Ryou Kawaguchi, Mitsuaki Yano 2009 Journal of Crystal Growth 311 2102

    [9]

    Kazuto Koike, Takayoshi Honden, Isao Makabe, FengPingYan, Mitsuaki Yano 2003 Journal of Crystal Growth 257 212

    [10]

    Xu T N, Wu H Z, Si J X 2008 Acta Phys. Sin. 57 2574(in Chinese) [徐天宁, 吴惠桢, 斯剑霄 2008 物理学报 57 2574]

    [11]

    Kazuto Koike, Takashi Tanaka, Shuwei Li, Mitsuaki Yano 2001 Journal of Crysal Growth 227-228 671

    [12]

    Si J X, Jin S Q, Zhang H J, Zhu P, Qiu D J, Wu H Z 2008 Appl. Phys. Lett. 93 202101

    [13]

    Dziawa P, Taliashvili B, Domuchowski W, Kowalczyk L, Sakowska E, Mycielski A 2005 phys. stat. sol.(c) 2 3 1167

    [14]

    Mitsuaki Yano, Kazuto Koike, Takeshi Furushou, TokuoYodo 1997 Journal of Crystal Growth 175/176 665

    [15]

    Park S H, Park S E, Lee J C, Song P K, Lee J H 2009 J. Kor. Phys. Soc. 54 1344

    [16]

    Zhang Q, Li X F, Li G F 2008 Thin solid films 517 613

  • [1]

    Sporken R, Sivananthan S,Mahavadi K K,Monfroy G, Boukerche M, Faurie J P 1989 Appl. Phys. Lett. 55 1879

    [2]

    Datta S, Furdyna J K, Gunshor R L 1985 Supperlatt.Microstruct. 1 327

    [3]

    Britt J, Ferekidis C 1993 Appl. Phys. Lett. 62 2851

    [4]

    Romeo N, Basio A, Tedeschi R, Canevari V 2000 Mater. Chem. Phys. 66 201

    [5]

    Wu X Z 2004 Sol. Energy. 77 803

    [6]

    Novruzov V D, Fathi N M, Gorur1 O, Tomakin M, Bayramov A I, Schorr S, Mamedov N 2010 Phys. Status Solidi A207 3 730

    [7]

    Li Y J, Zheng J G, Feng L H, Li B, Zeng G G, Cai Y P, Zhang J Q, Li W, Lei Z, Wu L L, Cai W 2010 Acta Phys. Sin. 59 0625 ( in Chinese) [李愿杰, 郑家贵, 冯良桓, 黎兵, 曾广根, 蔡亚平, 张静全, 李卫, 雷智, 武莉莉, 蔡伟 2010 物理学报 59 0625]

    [8]

    Kazuto Koike, Takanori Hotei, Ryou Kawaguchi, Mitsuaki Yano 2009 Journal of Crystal Growth 311 2102

    [9]

    Kazuto Koike, Takayoshi Honden, Isao Makabe, FengPingYan, Mitsuaki Yano 2003 Journal of Crystal Growth 257 212

    [10]

    Xu T N, Wu H Z, Si J X 2008 Acta Phys. Sin. 57 2574(in Chinese) [徐天宁, 吴惠桢, 斯剑霄 2008 物理学报 57 2574]

    [11]

    Kazuto Koike, Takashi Tanaka, Shuwei Li, Mitsuaki Yano 2001 Journal of Crysal Growth 227-228 671

    [12]

    Si J X, Jin S Q, Zhang H J, Zhu P, Qiu D J, Wu H Z 2008 Appl. Phys. Lett. 93 202101

    [13]

    Dziawa P, Taliashvili B, Domuchowski W, Kowalczyk L, Sakowska E, Mycielski A 2005 phys. stat. sol.(c) 2 3 1167

    [14]

    Mitsuaki Yano, Kazuto Koike, Takeshi Furushou, TokuoYodo 1997 Journal of Crystal Growth 175/176 665

    [15]

    Park S H, Park S E, Lee J C, Song P K, Lee J H 2009 J. Kor. Phys. Soc. 54 1344

    [16]

    Zhang Q, Li X F, Li G F 2008 Thin solid films 517 613

  • [1] Chen Ying-Fei, Peng Wei, Li Jie, Chen Ke, Zhu Xiao-Hong, Wang Ping, Zeng Guang, Zheng Dong-Ning, Li Lin. In-situ monitoring of the growth of oxide thin films in PLD using high-pressure reflection high energy electron diffraction. Acta Physica Sinica, 2003, 52(10): 2601-2606. doi: 10.7498/aps.52.2601
    [2] Zheng Xu, Li Bing, Wang Zhao, Zhang Dong-Ting, Feng Liang-Huan, Zhang Jing-Quan, Cai Ya-Ping, Zheng Jia-Gui, Wu Li-Li, Li Wei, Lei Zhi, Zeng Guang-Gen. Cu deep level center in CdTe solar cell. Acta Physica Sinica, 2010, 59(4): 2783-2788. doi: 10.7498/aps.59.2783
    [3] Yin Shi-Long, Fan Jiang-Wei, Yan Wen-Sheng, Wei Shi-Qiang, Liu Wen-Han, Bian Qing. X-ray absorption fine structure and x-ray diffraction studies on structures of Fe70Cu30 alloys affected by mechanical alloying. Acta Physica Sinica, 2004, 53(2): 514-520. doi: 10.7498/aps.53.514
    [4] Sun Zhi-Hu, Ye Jian, Pan Zhi-Yun, Wei Shi-Qiang, Sun Yu, Zhu San-Yuan, Shi Tong-Fei, Liu Wen-Han. Structure of MnxGe1-x dilute magnetic semiconductor films. Acta Physica Sinica, 2007, 56(9): 5471-5475. doi: 10.7498/aps.56.5471
    [5] Ren Peng, Liu Zhong-Liang, Ye Jian, Jiang Yong, Liu Jin-Feng, Sun Yu, Xu Peng-Shou, Sun Zhi-Hu, Pan Zhi-Yun, Yan Wen-Sheng, Wei Shi-Qiang. Structural study of MnxSi1-x magnetic semiconductor thin films. Acta Physica Sinica, 2008, 57(7): 4322-4327. doi: 10.7498/aps.57.4322
    [6] Ren Rong, Wu Yu-Cheng, Tang Wen-Ming, Wang Feng-Tao, Zheng Zhi-Xiang. Structural evolution and grain growth kinetics of the mechanically alloyed Fe42.5Al42.5Ti5B10 induced by annealing. Acta Physica Sinica, 2008, 57(9): 5774-5781. doi: 10.7498/aps.57.5774
    [7] Niu Hua-Lei, Li Xiao-Na, Hu Bing, Dong Chuang, Jiang Xin. Room-temperature photoluminescence analysis of nano-β-FeSi2/a-Si multilayer films. Acta Physica Sinica, 2009, 58(6): 4117-4122. doi: 10.7498/aps.58.4117
    [8] Zhang Cai-Hong, Sheng Yi, Tian Hong, Xu Yao, Lü Chun-Xiang, Wu Zhong-Hua. The evolution of crystalline structure in the preparationof PAN-based carbon fibers studiedby whole powder pattern fitting. Acta Physica Sinica, 2011, 60(3): 036101. doi: 10.7498/aps.60.036101
    [9] K. Ogata, K. Koike, S. Sasa, M. Inoue, M. Yano, Zheng Kai, Wang Lin, Li Yi-Fan, Gong Tao-Rong, Jian Shui-Sheng, Yan Feng-Ping. Measurement of thickness and refractive index of Zn1-xMgxO film grown on sapphire substrate by molecular beam epitaxy. Acta Physica Sinica, 2007, 56(7): 4127-4131. doi: 10.7498/aps.56.4127
    [10] Zhang Chong, Ye Hui, Zhang Lei, Huang-Fu You-Rui, Liu Xu. A study of RHEED pattern from the epitaxial growth of Si-Ge crystal. Acta Physica Sinica, 2009, 58(11): 7765-7772. doi: 10.7498/aps.58.7765
  • Citation:
Metrics
  • Abstract views:  1640
  • PDF Downloads:  848
  • Cited By: 0
Publishing process
  • Received Date:  17 April 2011
  • Accepted Date:  13 June 2011
  • Published Online:  15 April 2012

Study of growth of [111]-oriented CdTe thin films by MBE

  • 1. Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 10974174, 91021020), and the Natural Science Foundation of Zhejiang Province, China(Grant Nos.Z6100117, Z111057).

Abstract: In this study, CdTe(111) thin films were epitaxially grown on freshly cleaved BaF2 substrate using molecular beam epitaxy (MBE). In situ characterization of reflection high energy electron diffraction (RHEED) reveals the growth mode of transition from 2D to 3D. XRD analysis results verify the single crystalline property of the as-grown films. Theoretical method is adopted to fit the measured near infrared transmission spectrum, revealing a CdTe energy gap of 1.511 eV at room temperature.

Reference (16)

Catalog

    /

    返回文章
    返回