Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si

Wang Cheng Wang Guan-Yu Zhang He-Ming Song Jian-Jun Yang Chen-Dong Mao Yi-Fei Li Yong-Mao Hu Hui-Yong Xuan Rong-Xi

Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si

Wang Cheng, Wang Guan-Yu, Zhang He-Ming, Song Jian-Jun, Yang Chen-Dong, Mao Yi-Fei, Li Yong-Mao, Hu Hui-Yong, Xuan Rong-Xi
PDF
Get Citation
  • Performance enhancement of strained Si material originates from the stress on it, which can be measured by Raman spectroscopy. A study of the theoretical model of strain-induced Raman spectrum frequency shift in strained Si material is of profound theoretical and practical significance. The Raman frequency shift of strained Si is significantly correlated with the stress intensity, the stress type and the crystal plane. However, the corresponding reports republished are lacking in integrality and systematization in the process of modeling. In this paper, according to the theory of Raman spectroscopy, based on Secular equation and Raman selection rules, quantitative relationships between strain tensor and Raman frequency shift for uniaxial and biaxial strained Si grown on (001), (101), and (111) SiGe substrates are achieved. On this basis, theoretical models of mechanical stress and Raman spectrum for uniaxial and biaxial strained Si materials grown on (001), (101), and (111) SiGe substrates are obtained using Hooke's law, respectively. The procedure for setling up these models is elaborate and systematic and the results obtained are comprehensive and quantificational, which can provide an important reference for the stress analysis in strained Si material.
    • Funds: Project supported by the National Ministries and Commissions (Grant Nos. 51308040203, 6139801), the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499, 72104089), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).
    [1]

    Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 2064 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2010 物理学报 59 2064]

    [2]

    Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Science in China 53 454

    [3]

    Zhang J H, Gu F, Liu Q Q, Gu B, Li M 2010 Acta Phys. Sin. 59 4226 (in Chinese) [张加宏, 顾芳, 刘清惓, 顾斌, 李敏 2010 物理学报 59 4226]

    [4]

    Gao H, Ikeda K, Hata S, Nakashima H, Wang D, Nakashima H 2011 Acta Materialia 59 2882

    [5]

    Song J J, Zhang H M, Hu H Y, Fu Q 2009 Science in China 52 546

    [6]

    Haugerud B M, Nayeem M B, Krithivasan R, Lu Y, Zhu C D, Cressler J D, Belford R E, Joseph A J 2005 Solid-State Electronics 49 986

    [7]

    Olsen S H, Dobrosz P, Agaiby M B, Tsang Y L, Alatise O, Bull S J, O’Neill A G, Moselund K E, Ionescu A M, Majhi P, Buca D, Mantl S, Coulson H 2008 Materials Science in Semiconductor Processing 11(5-6) 271

    [8]

    Mermoux M, Crisci A, Baillet F, Destefanis V, Rouchon D, Papon A M, Hartmann J M 2010 J. Appl. Phys. 107 013512

    [9]

    Qian J 2003 MS Thesis (Beijing: The Chinese Academy of Sciences) (in Chinese) [钱劲 2003 硕士论文(北京: 中国科学院研究生院)]

    [10]

    Narayanan S, Kalidindi S R, Schadler L S 1997 J. Appl. Phys. 82 2595

    [11]

    Qiu Y, Lei Z K, Kang Y L, Hu M, Xu H, Niu H P 2004 Journal of Mechanical Strength 26 389

    [12]

    Anastassakis E, Pinczuk A, Burstein E 1970 Solid State Communications 8 133

    [13]

    Anastassakis E, Cantarere A, Cardona M 1990 Phys. Rev. B 41 7529

    [14]

    Brantley W A 1973 J. Appl. Phys. 44 534

    [15]

    Loudon R 1964 Adv. Phys. 13 423

    [16]

    Song J J, Mao Y F, Shan H S, Yang C D, Li Y M, Zhang H M, Hu H Y 2010 IEEE International Asia Conference on Optical Instrument and Measurement Shenzhen 120—122

    [17]

    Wolf I D 1996 Semicond. Sci. Technol. 11 139

  • [1]

    Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 2064 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2010 物理学报 59 2064]

    [2]

    Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Science in China 53 454

    [3]

    Zhang J H, Gu F, Liu Q Q, Gu B, Li M 2010 Acta Phys. Sin. 59 4226 (in Chinese) [张加宏, 顾芳, 刘清惓, 顾斌, 李敏 2010 物理学报 59 4226]

    [4]

    Gao H, Ikeda K, Hata S, Nakashima H, Wang D, Nakashima H 2011 Acta Materialia 59 2882

    [5]

    Song J J, Zhang H M, Hu H Y, Fu Q 2009 Science in China 52 546

    [6]

    Haugerud B M, Nayeem M B, Krithivasan R, Lu Y, Zhu C D, Cressler J D, Belford R E, Joseph A J 2005 Solid-State Electronics 49 986

    [7]

    Olsen S H, Dobrosz P, Agaiby M B, Tsang Y L, Alatise O, Bull S J, O’Neill A G, Moselund K E, Ionescu A M, Majhi P, Buca D, Mantl S, Coulson H 2008 Materials Science in Semiconductor Processing 11(5-6) 271

    [8]

    Mermoux M, Crisci A, Baillet F, Destefanis V, Rouchon D, Papon A M, Hartmann J M 2010 J. Appl. Phys. 107 013512

    [9]

    Qian J 2003 MS Thesis (Beijing: The Chinese Academy of Sciences) (in Chinese) [钱劲 2003 硕士论文(北京: 中国科学院研究生院)]

    [10]

    Narayanan S, Kalidindi S R, Schadler L S 1997 J. Appl. Phys. 82 2595

    [11]

    Qiu Y, Lei Z K, Kang Y L, Hu M, Xu H, Niu H P 2004 Journal of Mechanical Strength 26 389

    [12]

    Anastassakis E, Pinczuk A, Burstein E 1970 Solid State Communications 8 133

    [13]

    Anastassakis E, Cantarere A, Cardona M 1990 Phys. Rev. B 41 7529

    [14]

    Brantley W A 1973 J. Appl. Phys. 44 534

    [15]

    Loudon R 1964 Adv. Phys. 13 423

    [16]

    Song J J, Mao Y F, Shan H S, Yang C D, Li Y M, Zhang H M, Hu H Y 2010 IEEE International Asia Conference on Optical Instrument and Measurement Shenzhen 120—122

    [17]

    Wolf I D 1996 Semicond. Sci. Technol. 11 139

  • [1] Sun Yun, Wang Sheng-Lai, Gu Qing-Tian, Xu Xin-Guang, Ding Jian-Xu, Liu Wen-Jie, Liu Guang-Xia, Zhu Sheng-Jun. Study of KDP crystal lattice strain and stress by high resolution X-ray diffraction. Acta Physica Sinica, 2012, 61(21): 210203. doi: 10.7498/aps.61.210203
    [2] Zhang Jin-Shuai, Huang Qiu-Shi, Jiang Li, Qi Run-Ze, Yang Yang, Wang Feng-Li, Zhang Zhong, Wang Zhan-Shan. Stress and structure properties of X-ray W/Si multilayer under low temperature annealing. Acta Physica Sinica, 2016, 65(8): 086101. doi: 10.7498/aps.65.086101
    [3] Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming. Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica, 2005, 54(11): 5450-5454. doi: 10.7498/aps.54.5450
    [4] Wang Guan-Yu, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Ma Jian-Li, Wang Xiao-Yan. Analytical dispersion relation model for conduction band of uniaxial strained Si. Acta Physica Sinica, 2012, 61(9): 097103. doi: 10.7498/aps.61.097103
    [5] Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo. Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric. Acta Physica Sinica, 2010, 59(11): 8131-8136. doi: 10.7498/aps.59.8131
    [6] Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric Halo. Acta Physica Sinica, 2013, 62(15): 158502. doi: 10.7498/aps.62.158502
    [7] Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi. Dispersion relation model of valence band in strained Si. Acta Physica Sinica, 2008, 57(11): 7228-7232. doi: 10.7498/aps.57.7228
    [8] Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Xuan Rong-Xi, Hu Hui-Yong, Wang Guan-Yu. Densities of states of strained Si in different crystal systems. Acta Physica Sinica, 2011, 60(4): 047106. doi: 10.7498/aps.60.047106
    [9] Hu Hui-Yong, Lei Shuai, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin, Wang Bin. Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate. Acta Physica Sinica, 2012, 61(10): 107301. doi: 10.7498/aps.61.107301
    [10] Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2013, 62(10): 108501. doi: 10.7498/aps.62.108501
  • Citation:
Metrics
  • Abstract views:  2436
  • PDF Downloads:  1610
  • Cited By: 0
Publishing process
  • Received Date:  13 May 2011
  • Accepted Date:  15 June 2011
  • Published Online:  15 April 2012

Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si

  • 1. Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
Fund Project:  Project supported by the National Ministries and Commissions (Grant Nos. 51308040203, 6139801), the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499, 72104089), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).

Abstract: Performance enhancement of strained Si material originates from the stress on it, which can be measured by Raman spectroscopy. A study of the theoretical model of strain-induced Raman spectrum frequency shift in strained Si material is of profound theoretical and practical significance. The Raman frequency shift of strained Si is significantly correlated with the stress intensity, the stress type and the crystal plane. However, the corresponding reports republished are lacking in integrality and systematization in the process of modeling. In this paper, according to the theory of Raman spectroscopy, based on Secular equation and Raman selection rules, quantitative relationships between strain tensor and Raman frequency shift for uniaxial and biaxial strained Si grown on (001), (101), and (111) SiGe substrates are achieved. On this basis, theoretical models of mechanical stress and Raman spectrum for uniaxial and biaxial strained Si materials grown on (001), (101), and (111) SiGe substrates are obtained using Hooke's law, respectively. The procedure for setling up these models is elaborate and systematic and the results obtained are comprehensive and quantificational, which can provide an important reference for the stress analysis in strained Si material.

Reference (17)

Catalog

    /

    返回文章
    返回