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A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor

Ma Ji-Gang Ma Xiao-Hua Zhang Hui-Long Cao Meng-Yi Zhang Kai Li Wen-Wen Guo Xing Liao Xue-Yang Chen Wei-Wei Hao Yue

A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor

Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue
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  • Kink effect is analyzed in AlGaN/GaN devices primarily. A semiempirical model is given by analyzing the kink effect on AlGaN/GaN high electron mobility transistor and by considering the relationship between Vds,kink and gate voltage. Due to a little error between simulation results and measured data, this model can be used to identify the occurrence of kink effect and change in drain current. The analyses of experimental results and model simulation lead to a conclusion that impact ionization plays an important role in generating kink effect.
    • Funds: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606).
    [1]

    Gaska R, Chen Q, Yang J, Osinsky A, Khan M A, Shur M S 1997 IEEE Electron Dev. Lett. 18 492

    [2]

    Kumar V, Lu W, Schwindt R, Kuliev A, Simin G, Yang J, Khan M A, Adesida Ilesanmi 2002 IEEE Electron Dev. Lett. 23 455

    [3]

    Wu Y F, Moore M, Saxler A, Wisleder T, Parikh P 2006 64th Device Research Conference p151—152

    [4]

    Bi ZH W, Feng Q, Hao Y, Yue Y ZH, Zhang ZH F, Mao W, Yang L Y, Hu G ZH 2003 Acta Phys. Sin. 58 7211 (in Chinese) [毕志伟, 冯倩, 郝跃, 岳远征, 张忠芬, 毛维, 杨丽媛, 胡贵州 2009 物理学报 58 7211]

    [5]

    Ma X H, Yu H Y, Quan S, Yang L Y, Pan C Y, Yang L, Wang H, Zhang J CH, Hao Y 2011 Chin. Phys. B 20 027303

    [6]

    Meneghesso G, Rampazzo F, Kordos P, Verzellesi G, Zanoni E 2006 IEEE Trans. Electron Devices 53 2932

    [7]

    Jarndal A, Kompa G 2007 IEEE Trans. Electron Devices 54 2830

    [8]

    Fu L H, Lu H, Chen D J, Zhang R, Zheng Y D, Chen T S, Wei K, Liu X Y 2011 Appl. Phys. Lett. 98 173508

    [9]

    Wang M J, Chen K J 2011 IEEE Electron Dev. Lett. 32 482

    [10]

    Brar B, Boutros K, DeWames R E, Tilak V, Shealy R and Eastman L 2002 Proc. IEEE Lester Eastman Conf. p487—491

    [11]

    Meneghesso G, Zanon F, Uren M J, Zanoni E 2009 IEEE Electron Dev. Lett. 30 100

    [12]

    SomervilleMH, del Alamo J A, HokeW1995 International Electron Devices Meeting Washington, DC, USA 201

    [13]

    Somerville M H, Ernst A, del Alamo J A 2000 IEEE Trans. Electron Devices 47 922

    [14]

    Liu D, Chen X J, Liu G G, He ZH J, Liu X Y, Wu D X 2006 Chinese Journal of Semiconductors 27 1984 (in Chinese) [刘丹, 陈晓娟, 刘果果, 和致经, 刘新宇, 吴德馨 2006 半导体学报 27 1984]

    [15]

    Dyakonova N, Dickens A, Shur M S, Gaska R, Yang J W 1998 Appl. Phys. Lett. 72 2562

    [16]

    Lin Ch H, Wang W K, Lin P C, Lin C K, Chang Y J, Chan Y J 2005 IEEE Electron Dev. Lett. 26 710

    [17]

    Liu H X, Hao Y, Zhang T, Zheng X F, Ma X H 2003 Acta Phys. Sin. 52 984 (in Chinese) [刘红侠, 郝跃, 张涛, 郑雪峰, 马晓华 2003 物理学报 52 984]

  • [1]

    Gaska R, Chen Q, Yang J, Osinsky A, Khan M A, Shur M S 1997 IEEE Electron Dev. Lett. 18 492

    [2]

    Kumar V, Lu W, Schwindt R, Kuliev A, Simin G, Yang J, Khan M A, Adesida Ilesanmi 2002 IEEE Electron Dev. Lett. 23 455

    [3]

    Wu Y F, Moore M, Saxler A, Wisleder T, Parikh P 2006 64th Device Research Conference p151—152

    [4]

    Bi ZH W, Feng Q, Hao Y, Yue Y ZH, Zhang ZH F, Mao W, Yang L Y, Hu G ZH 2003 Acta Phys. Sin. 58 7211 (in Chinese) [毕志伟, 冯倩, 郝跃, 岳远征, 张忠芬, 毛维, 杨丽媛, 胡贵州 2009 物理学报 58 7211]

    [5]

    Ma X H, Yu H Y, Quan S, Yang L Y, Pan C Y, Yang L, Wang H, Zhang J CH, Hao Y 2011 Chin. Phys. B 20 027303

    [6]

    Meneghesso G, Rampazzo F, Kordos P, Verzellesi G, Zanoni E 2006 IEEE Trans. Electron Devices 53 2932

    [7]

    Jarndal A, Kompa G 2007 IEEE Trans. Electron Devices 54 2830

    [8]

    Fu L H, Lu H, Chen D J, Zhang R, Zheng Y D, Chen T S, Wei K, Liu X Y 2011 Appl. Phys. Lett. 98 173508

    [9]

    Wang M J, Chen K J 2011 IEEE Electron Dev. Lett. 32 482

    [10]

    Brar B, Boutros K, DeWames R E, Tilak V, Shealy R and Eastman L 2002 Proc. IEEE Lester Eastman Conf. p487—491

    [11]

    Meneghesso G, Zanon F, Uren M J, Zanoni E 2009 IEEE Electron Dev. Lett. 30 100

    [12]

    SomervilleMH, del Alamo J A, HokeW1995 International Electron Devices Meeting Washington, DC, USA 201

    [13]

    Somerville M H, Ernst A, del Alamo J A 2000 IEEE Trans. Electron Devices 47 922

    [14]

    Liu D, Chen X J, Liu G G, He ZH J, Liu X Y, Wu D X 2006 Chinese Journal of Semiconductors 27 1984 (in Chinese) [刘丹, 陈晓娟, 刘果果, 和致经, 刘新宇, 吴德馨 2006 半导体学报 27 1984]

    [15]

    Dyakonova N, Dickens A, Shur M S, Gaska R, Yang J W 1998 Appl. Phys. Lett. 72 2562

    [16]

    Lin Ch H, Wang W K, Lin P C, Lin C K, Chang Y J, Chan Y J 2005 IEEE Electron Dev. Lett. 26 710

    [17]

    Liu H X, Hao Y, Zhang T, Zheng X F, Ma X H 2003 Acta Phys. Sin. 52 984 (in Chinese) [刘红侠, 郝跃, 张涛, 郑雪峰, 马晓华 2003 物理学报 52 984]

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  • Received Date:  10 April 2011
  • Accepted Date:  23 June 2011
  • Published Online:  15 April 2012

A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor

  • 1. School of Technical Physics, Xidian University, Xi’an 710071, China;
  • 2. Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
Fund Project:  Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606).

Abstract: Kink effect is analyzed in AlGaN/GaN devices primarily. A semiempirical model is given by analyzing the kink effect on AlGaN/GaN high electron mobility transistor and by considering the relationship between Vds,kink and gate voltage. Due to a little error between simulation results and measured data, this model can be used to identify the occurrence of kink effect and change in drain current. The analyses of experimental results and model simulation lead to a conclusion that impact ionization plays an important role in generating kink effect.

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