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A new phenomenon of photoconductive InSb detector under the irradiation of out-band laser

Zheng Xin Jiang Tian Cheng Xiang-Ai Jiang Hou-Man Lu Qi-Sheng

A new phenomenon of photoconductive InSb detector under the irradiation of out-band laser

Zheng Xin, Jiang Tian, Cheng Xiang-Ai, Jiang Hou-Man, Lu Qi-Sheng
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  • A new phenomenon is observed when a photoconductive InSb detector with 0.228eV band gap is irradiated by 10.6 μm laser, whose photon energy is 0.12 eV. The detector is heated by this out-band laser, due to the absorption of laser energy. However, a transformation temperature T0 exists in this process. When the temperature of the detector, T, is lower than T0, the number of carriers remains constant but the conductivity changes because of a change in mobility. The mobility decreases with the increase of temperature and varies as T-2.35. At T>T0, the concentration of thermally-activated carrier increases with temperature, which is proportional to exp (-Eg/2k0T). As a result, the influence of carrier concentration becomes more and more important. As a result, the output of the detector decreases. In a word, the output voltage of photoconductive detector results from the temperature dependence of mobility and concentration of carriers. This work provides an experimental basis for improving the carrier transport model.
    • Funds: Project supported by the National Basic Technology Research and Development Program of China (Grant No. 1030110).
    [1]

    Bartoli F, Esterowitz L, Kruer M, Allen R 1977 Appl. Opt. 16 2934

    [2]

    Bartoli F J, Esterowitz L, Kruer M R, Allen R E 1975 Appl. Opt. 14 2499

    [3]

    Bartoli F, Esterowitz L, Allen R, Kruer M 1976 J. Appl. Phys. 47 2875

    [4]

    Xu X Y, Ye Z H, Li Z F, Lu W 2007 Acta Phys. Sin. 56 2882 (in Chinese) [徐向晏, 叶振华, 李志锋, 陆卫 2007 物理学报 56 2882]

    [5]

    HuWD, Yin F, Ye Z H, Quan Z J, Hu X N, Li Z F, Cheng X S, Lu W 2009 Acta Phys. Sin. 58 7891 (in Chinese) [胡伟达, 殷菲, 叶振华, 全知觉, 胡晓宁, 李志锋, 陈效双, 陆卫 2009 物理学报 58 7891]

    [6]

    Liu X Y, Ma W Q, Zhang Y H, Huo Y H, Zhong M, Chen L H 2010 Acts Phys. Sin. 59 5720 (in Chinese) [刘小宇, 马文全, 张艳华, 霍永恒, 种明, 陈良惠 2010 物理学报 59 5720]

    [7]

    He Y X Jiang H M 2008 High Power Laser and Particle Beams 20 1233 (in Chinese) [贺元兴, 江厚满 2008 强激光与粒子束 20 1233]

    [8]

    Shen X C 2002 The Spectrum and Optical Properties of Semiconductor (Beijing: Science Press ) pp363, 467 (in Chinese) [沈学础 2002 半导体光谱和光学性质 (北京: 科学出版社) 第363,467页]

    [9]

    Li L, Lu Q S 2008 Acta Opt. Sin. 28 1953 (in Chinese) [李莉, 陆启生 2008 光学学报 28 1953]

    [10]

    Wang R, Si L, Lu Q S 2003 Laser & Infrared 33 335 (in Chinese) [王睿, 司磊, 陆启生 2009 激光与红外 33 335]

    [11]

    Li X Q, Cheng X A, Wang R 2003 China J. Laser. 30 1070 (in Chinese) [李修乾, 程湘爱, 王睿 2003 中国激光 28 1070]

    [12]

    Li X Q, Cheng X A, Wang R 2003 High Power Laser and Partial Beams 15 40 (in Chinese) [李修乾, 程湘爱, 王睿 2003 强激光与粒子束 15 40]

    [13]

    Ma L Q, Lu Q S 2006 High Power Laser and Partial Beams 18 201 (in Chinese) [马丽芹, 陆启生 2006 强激光与粒子束 18 201]

    [14]

    Ma L Q, Lu Q S, Du S J 2004 China J. Laser. 31 342 (in Chinese) [马丽芹, 陆启生, 杜少军 2004 中国激光 31 342]

    [15]

    Sun C W, Lu Q S 2002 Effect of Laser Irradiation (Beijing: National Defense Industry Press ) pp341—360 (in Chinese) [孙承伟, 陆启生 2002 激光辐照效应 (北京: 国防工业出版社) 第341---360页]

    [16]

    Varshni Y P 1967 Physica 34 149

    [17]

    Meyer J R 1978 Bull. Am. Phys. Soc. 23 328

    [18]

    Srinivasan K, Zhi G Y 2007 J. Appl. Phys 101 113104

    [19]

    Liu E K, Zhu B S, Luo J S 2009 Semiconductor Phys. (Beijing: Publishing House of Electronics Industry ) pp76 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2009 半导体物理学 (北京: 电子工业出版社) 第76页]

    [20]

    Sadao A, Ji Z G 2009 Properties of GroupIV, II-V and II-VI Semiconductors (Beijing: Science Press ) pp113, 114 (in Chinese) [Sadao Adachi 著 季振国 译 2009 IV族, III-V 族和 II-VI 族半导体材料的特性(北京: 科学出版社)第113,114页]

  • [1]

    Bartoli F, Esterowitz L, Kruer M, Allen R 1977 Appl. Opt. 16 2934

    [2]

    Bartoli F J, Esterowitz L, Kruer M R, Allen R E 1975 Appl. Opt. 14 2499

    [3]

    Bartoli F, Esterowitz L, Allen R, Kruer M 1976 J. Appl. Phys. 47 2875

    [4]

    Xu X Y, Ye Z H, Li Z F, Lu W 2007 Acta Phys. Sin. 56 2882 (in Chinese) [徐向晏, 叶振华, 李志锋, 陆卫 2007 物理学报 56 2882]

    [5]

    HuWD, Yin F, Ye Z H, Quan Z J, Hu X N, Li Z F, Cheng X S, Lu W 2009 Acta Phys. Sin. 58 7891 (in Chinese) [胡伟达, 殷菲, 叶振华, 全知觉, 胡晓宁, 李志锋, 陈效双, 陆卫 2009 物理学报 58 7891]

    [6]

    Liu X Y, Ma W Q, Zhang Y H, Huo Y H, Zhong M, Chen L H 2010 Acts Phys. Sin. 59 5720 (in Chinese) [刘小宇, 马文全, 张艳华, 霍永恒, 种明, 陈良惠 2010 物理学报 59 5720]

    [7]

    He Y X Jiang H M 2008 High Power Laser and Particle Beams 20 1233 (in Chinese) [贺元兴, 江厚满 2008 强激光与粒子束 20 1233]

    [8]

    Shen X C 2002 The Spectrum and Optical Properties of Semiconductor (Beijing: Science Press ) pp363, 467 (in Chinese) [沈学础 2002 半导体光谱和光学性质 (北京: 科学出版社) 第363,467页]

    [9]

    Li L, Lu Q S 2008 Acta Opt. Sin. 28 1953 (in Chinese) [李莉, 陆启生 2008 光学学报 28 1953]

    [10]

    Wang R, Si L, Lu Q S 2003 Laser & Infrared 33 335 (in Chinese) [王睿, 司磊, 陆启生 2009 激光与红外 33 335]

    [11]

    Li X Q, Cheng X A, Wang R 2003 China J. Laser. 30 1070 (in Chinese) [李修乾, 程湘爱, 王睿 2003 中国激光 28 1070]

    [12]

    Li X Q, Cheng X A, Wang R 2003 High Power Laser and Partial Beams 15 40 (in Chinese) [李修乾, 程湘爱, 王睿 2003 强激光与粒子束 15 40]

    [13]

    Ma L Q, Lu Q S 2006 High Power Laser and Partial Beams 18 201 (in Chinese) [马丽芹, 陆启生 2006 强激光与粒子束 18 201]

    [14]

    Ma L Q, Lu Q S, Du S J 2004 China J. Laser. 31 342 (in Chinese) [马丽芹, 陆启生, 杜少军 2004 中国激光 31 342]

    [15]

    Sun C W, Lu Q S 2002 Effect of Laser Irradiation (Beijing: National Defense Industry Press ) pp341—360 (in Chinese) [孙承伟, 陆启生 2002 激光辐照效应 (北京: 国防工业出版社) 第341---360页]

    [16]

    Varshni Y P 1967 Physica 34 149

    [17]

    Meyer J R 1978 Bull. Am. Phys. Soc. 23 328

    [18]

    Srinivasan K, Zhi G Y 2007 J. Appl. Phys 101 113104

    [19]

    Liu E K, Zhu B S, Luo J S 2009 Semiconductor Phys. (Beijing: Publishing House of Electronics Industry ) pp76 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2009 半导体物理学 (北京: 电子工业出版社) 第76页]

    [20]

    Sadao A, Ji Z G 2009 Properties of GroupIV, II-V and II-VI Semiconductors (Beijing: Science Press ) pp113, 114 (in Chinese) [Sadao Adachi 著 季振国 译 2009 IV族, III-V 族和 II-VI 族半导体材料的特性(北京: 科学出版社)第113,114页]

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  • Received Date:  16 May 2011
  • Accepted Date:  24 June 2011
  • Published Online:  15 April 2012

A new phenomenon of photoconductive InSb detector under the irradiation of out-band laser

  • 1. College of Optoelectric Science and Engineering, National University of Defense Technology, Changsha 410073, China
Fund Project:  Project supported by the National Basic Technology Research and Development Program of China (Grant No. 1030110).

Abstract: A new phenomenon is observed when a photoconductive InSb detector with 0.228eV band gap is irradiated by 10.6 μm laser, whose photon energy is 0.12 eV. The detector is heated by this out-band laser, due to the absorption of laser energy. However, a transformation temperature T0 exists in this process. When the temperature of the detector, T, is lower than T0, the number of carriers remains constant but the conductivity changes because of a change in mobility. The mobility decreases with the increase of temperature and varies as T-2.35. At T>T0, the concentration of thermally-activated carrier increases with temperature, which is proportional to exp (-Eg/2k0T). As a result, the influence of carrier concentration becomes more and more important. As a result, the output of the detector decreases. In a word, the output voltage of photoconductive detector results from the temperature dependence of mobility and concentration of carriers. This work provides an experimental basis for improving the carrier transport model.

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