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Photoinduced change in resistance of charge-ordering Gd0.55Sr0.45MnO3 thin film

Zhao Sheng-Gui Jin Ke-Xin Luo Bing-Cheng Wang Jian-Yuan Chen Chang-Le

Photoinduced change in resistance of charge-ordering Gd0.55Sr0.45MnO3 thin film

Zhao Sheng-Gui, Jin Ke-Xin, Luo Bing-Cheng, Wang Jian-Yuan, Chen Chang-Le
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  • The compound and the film of the critical charge-ordering Gd0.55Sr0.45MnO3 thin film are prepared using the solid state reaction technique and the pulsed laser deposition method respectively. The properties of the photoinduced relative change in the resistance of the film are investigated. Experimental results indicate that the film exhibits the semiconductive conduction and the charge-ordering temperature is about 70 K from the fitting of a variable-range hopping model. The maximum value of the photoinduced relative change in resistance is about 99.8% when the laser with a power density of 40 mW/mm2 irradiates the film, and the rise time is about 8s independent of temperature. The maximum value of the photoinduced relative change in resistance is about 44% at T=20 K when the laser with a power density of 6 mW/mm2 irradiates the film. The time constant is increased with the increase of temperature, which is attributed to the competition between photoinduced effect and thermal fluctuation.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos: 51172183, 61078057, 50702046), the Scientific Research Program Funded by Shaanxi Provincial Education Commission (Grant No. 2010JK673), NPU Foundation for Fundamental Research (Grant No. NPU-FFR-JC201048), and NWPU Aoxiang Star.
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    Helmholt R V, Wecker J , Holzapel B , Schultz L, Samwer K 1993 Phys. Rev. Lett. 71 2331

    [2]

    Jin K X, Chen C L, Wang S L, Wang Y L, Wang Y C, Song Z M 2004 J. Appl. Phys. 96 1537

    [3]

    Tomioka Y, Tokura Y 2004 Phys. Rev. B 70 014432

    [4]

    Dho Joonghoe, Hur N H 2003 Phys. Rev. B 67 214414

    [5]

    Gao T, Cao S X, LiWJ, Kang B J, Yuan S J, Zhang J C 2006 Acta Phys. Sin. 55 3692 (in Chinese) [高湉, 曹世勋, 李文娟, 康保娟, 袁淑娟, 张金仓 2006 物理学报 55 3692]

    [6]

    Zhang R L, Song W H, Ma Y Q, Yang J, Zhao B C, Zheng G H, Sheng Z G, LuWJ, Sun Y P 2006 J. Phys. D: Appl. Phys. 39 621

    [7]

    Jin K X, Zhao S G, Chen C L 2009 Acta Phys. Sin. 58 4953 (in Chinese) [金克新, 赵省贵, 陈长乐 2009 物理学报 58 4953]

    [8]

    Takubo N, Ogimoto Y, Nakamura M, Tamaru H, Izumi M, Miyano K 2005 Phys. Rev. Lett. 95 017404

    [9]

    Takubo N, Onishi I, Takubo K, Mizokawa T, Miyano K 2008 Phys. Rev. Lett. 101 177403

    [10]

    Matsubara M, Okimoto Y, Ogasawara T, Tomioka Y, Okamoto H, Tokura Y 2007 Phys. Rev. Lett. 99 207401

    [11]

    Beyreuther E, Thiessen A, Grafström S , Eng L M, Dekker M C, Dörr K 2009 Phys. Rev. B 80 075106

    [12]

    Hu L, Sun Y P, Wang B, Sheng Z G, Luo X, Zhu X B, Yang Z R, Song W H, Dai J M, Yin Z Z, Wu W B 2009 J. Appl. Phys. 106 083903

    [13]

    Hu L, Sun Y P, Wand B, Luo X, Sheng Z G, Zhu X B, Song W H, Yang Z R, Dai J M 2010 Chin. Phys. Lett. 27 097504

    [14]

    Zhao S G, Jin K X, Chen C L 2007 J. Appl. Phys. 101 083701

    [15]

    Liu J M, Wang K F 2005 Progress in Physics 25 82

    [16]

    Kézsmárki I, Tomioka Y, Miyasaka S, DemkóL, Okimoto Y, Tokura Y 2008 Phys. Rev. B 77 075117

    [17]

    Chamberlin R V, Mozurkewich G, Orbach R 1991 J. Appl. Phys. 56 1714

  • [1]

    Helmholt R V, Wecker J , Holzapel B , Schultz L, Samwer K 1993 Phys. Rev. Lett. 71 2331

    [2]

    Jin K X, Chen C L, Wang S L, Wang Y L, Wang Y C, Song Z M 2004 J. Appl. Phys. 96 1537

    [3]

    Tomioka Y, Tokura Y 2004 Phys. Rev. B 70 014432

    [4]

    Dho Joonghoe, Hur N H 2003 Phys. Rev. B 67 214414

    [5]

    Gao T, Cao S X, LiWJ, Kang B J, Yuan S J, Zhang J C 2006 Acta Phys. Sin. 55 3692 (in Chinese) [高湉, 曹世勋, 李文娟, 康保娟, 袁淑娟, 张金仓 2006 物理学报 55 3692]

    [6]

    Zhang R L, Song W H, Ma Y Q, Yang J, Zhao B C, Zheng G H, Sheng Z G, LuWJ, Sun Y P 2006 J. Phys. D: Appl. Phys. 39 621

    [7]

    Jin K X, Zhao S G, Chen C L 2009 Acta Phys. Sin. 58 4953 (in Chinese) [金克新, 赵省贵, 陈长乐 2009 物理学报 58 4953]

    [8]

    Takubo N, Ogimoto Y, Nakamura M, Tamaru H, Izumi M, Miyano K 2005 Phys. Rev. Lett. 95 017404

    [9]

    Takubo N, Onishi I, Takubo K, Mizokawa T, Miyano K 2008 Phys. Rev. Lett. 101 177403

    [10]

    Matsubara M, Okimoto Y, Ogasawara T, Tomioka Y, Okamoto H, Tokura Y 2007 Phys. Rev. Lett. 99 207401

    [11]

    Beyreuther E, Thiessen A, Grafström S , Eng L M, Dekker M C, Dörr K 2009 Phys. Rev. B 80 075106

    [12]

    Hu L, Sun Y P, Wang B, Sheng Z G, Luo X, Zhu X B, Yang Z R, Song W H, Dai J M, Yin Z Z, Wu W B 2009 J. Appl. Phys. 106 083903

    [13]

    Hu L, Sun Y P, Wand B, Luo X, Sheng Z G, Zhu X B, Song W H, Yang Z R, Dai J M 2010 Chin. Phys. Lett. 27 097504

    [14]

    Zhao S G, Jin K X, Chen C L 2007 J. Appl. Phys. 101 083701

    [15]

    Liu J M, Wang K F 2005 Progress in Physics 25 82

    [16]

    Kézsmárki I, Tomioka Y, Miyasaka S, DemkóL, Okimoto Y, Tokura Y 2008 Phys. Rev. B 77 075117

    [17]

    Chamberlin R V, Mozurkewich G, Orbach R 1991 J. Appl. Phys. 56 1714

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  • Received Date:  24 April 2011
  • Accepted Date:  23 June 2011
  • Published Online:  15 April 2012

Photoinduced change in resistance of charge-ordering Gd0.55Sr0.45MnO3 thin film

  • 1. School of Science, Xi’an University of Science and Technology, Xi’an 710054, China;
  • 2. Shannxi Key Laboratory of Condensed Matter Structural and Properties, Northwestern Polytechnical University, Xian 710072, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos: 51172183, 61078057, 50702046), the Scientific Research Program Funded by Shaanxi Provincial Education Commission (Grant No. 2010JK673), NPU Foundation for Fundamental Research (Grant No. NPU-FFR-JC201048), and NWPU Aoxiang Star.

Abstract: The compound and the film of the critical charge-ordering Gd0.55Sr0.45MnO3 thin film are prepared using the solid state reaction technique and the pulsed laser deposition method respectively. The properties of the photoinduced relative change in the resistance of the film are investigated. Experimental results indicate that the film exhibits the semiconductive conduction and the charge-ordering temperature is about 70 K from the fitting of a variable-range hopping model. The maximum value of the photoinduced relative change in resistance is about 99.8% when the laser with a power density of 40 mW/mm2 irradiates the film, and the rise time is about 8s independent of temperature. The maximum value of the photoinduced relative change in resistance is about 44% at T=20 K when the laser with a power density of 6 mW/mm2 irradiates the film. The time constant is increased with the increase of temperature, which is attributed to the competition between photoinduced effect and thermal fluctuation.

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