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Photo-detachment of hydrogen negative ion in a magnetic field near a dielectric surface

## Photo-detachment of hydrogen negative ion in a magnetic field near a dielectric surface

Tang Tian-Tian, Wang De-Hua, Huang Kai-Yun, Wang Shan-Shan
• #### Abstract

Using the closed orbit theory, we study the photo-detachment of H- in a magnetic field near a dielectric surface. The photo-detachment cross section of this system is also derived and calculated. It is found that the photo-detachment cross section is not only related to the magnetic field strength, but also depends on the dielectric constant. For a given ion-surface distance and dielectric constant, with the increase of the magnetic field strength, the number of the closed orbits increases greatly and the oscillatory structure in the photo-detachment cross section becomes much more complicated. On the other hand, for a given magnetic field strength, the dielectric constant also has a great influence on the photo-detachment process of negative ion. Above the ionization threshold, the photo-detachment cross section becomes oscillatory. With the increase of the dielectric constant, the oscillatory structure in the cross-section becomes much more complicated. Therefore we can control the photo-detachment of negative ion by changing the magnetic field strength and the dielectric constant. This study provides a new understanding of the photo-detachment process of negative ion in the presence of external fields and surfaces.

#### Authors and contacts

###### Corresponding author: Wang De-Hua, jnwdh@sohu.com
• Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11074104, 10604045) and the High Educational Science and Technology Program of Shandong Province, China (Grant No. J09LA02).

#### References

 [1] Blumberg W A M, Itano W M, Larson D J 1979 Phys. Rev. A 19 139 [2] Bryant H C, Mohagheghi A, Stewart J E, Donahue J B, Quick C R, Reeder R A, Yuan V, Hummer C R, Smith W W, Stanley C, William P R, Lillian O 1987 Phys. Rev. Lett. 58 2412 [3] Du M L, Delos J B 1988 Phys. Rev. A 38 1896 [4] Song X H, Lin S L 2003 Acta Phys. Sin. 52 1611 (in Chinese) [宋晓红, 林圣路 2003 物理学报 52 1611] [5] Peters A D, Jaffe C, Delos J B 1997 Phys. Rev. A 56 331 [6] Peters A D, Delos J B 1993 Phys. Rev. A 47 3020 [7] Liu Z Y, Wang D H 1997 Phys. Rev. A 55 4605 [8] Liu Z Y, Wang D H 1997 Phys. Rev. A 56 2670 [9] Petek H, Weida M J, Nagano H, Ogawa S 2000 Science 288 1402 [10] Sjakste J, Borisov A G, Gauyacq J P 2004 Phys. Rev. Lett. 92 156101 [11] Yang G C, Zheng Y Z, Chi X X 2006 J. Phys. B 39 1855 [12] Yang G C, Zheng Y Z, Chi X X 2006 Phys. Rev. A 73 043413 [13] Wang D H 2007 Eur. Phys. J. D 45 179 [14] Wang D H, Yu Y J 2008 Chin. Phys. B 17 1231 [15] Zhao H J, Du M L 2009 Phys. Rev. A 79 023408 [16] Rui K K, Yang G C 2009 Surf. Sci. 603 632 [17] Wang D H, Huang K Y 2010 Commun. Theor. Phys. 53 898 [18] Yang G C, Du M L 2010 J. Phys. B: At. Mol. Opt. Phys. 43 035002 [19] Huang K Y, Wang D H 2010 Acta Phys. Sin. 59 932 (in Chinese) [黄凯云, 王德华 2010 物理学报 59 932] [20] Wang D H, Tang T T,Wang S S 2010 J. Electron Spectrosc. Relat. Phenom. 177 30 [21] Du M L 1989 Phys. Rev. A 40 4984 063202-7

#### Cited By

•  [1] Blumberg W A M, Itano W M, Larson D J 1979 Phys. Rev. A 19 139 [2] Bryant H C, Mohagheghi A, Stewart J E, Donahue J B, Quick C R, Reeder R A, Yuan V, Hummer C R, Smith W W, Stanley C, William P R, Lillian O 1987 Phys. Rev. Lett. 58 2412 [3] Du M L, Delos J B 1988 Phys. Rev. A 38 1896 [4] Song X H, Lin S L 2003 Acta Phys. Sin. 52 1611 (in Chinese) [宋晓红, 林圣路 2003 物理学报 52 1611] [5] Peters A D, Jaffe C, Delos J B 1997 Phys. Rev. A 56 331 [6] Peters A D, Delos J B 1993 Phys. Rev. A 47 3020 [7] Liu Z Y, Wang D H 1997 Phys. Rev. A 55 4605 [8] Liu Z Y, Wang D H 1997 Phys. Rev. A 56 2670 [9] Petek H, Weida M J, Nagano H, Ogawa S 2000 Science 288 1402 [10] Sjakste J, Borisov A G, Gauyacq J P 2004 Phys. Rev. Lett. 92 156101 [11] Yang G C, Zheng Y Z, Chi X X 2006 J. Phys. B 39 1855 [12] Yang G C, Zheng Y Z, Chi X X 2006 Phys. Rev. A 73 043413 [13] Wang D H 2007 Eur. Phys. J. D 45 179 [14] Wang D H, Yu Y J 2008 Chin. Phys. B 17 1231 [15] Zhao H J, Du M L 2009 Phys. Rev. A 79 023408 [16] Rui K K, Yang G C 2009 Surf. Sci. 603 632 [17] Wang D H, Huang K Y 2010 Commun. Theor. Phys. 53 898 [18] Yang G C, Du M L 2010 J. Phys. B: At. Mol. Opt. Phys. 43 035002 [19] Huang K Y, Wang D H 2010 Acta Phys. Sin. 59 932 (in Chinese) [黄凯云, 王德华 2010 物理学报 59 932] [20] Wang D H, Tang T T,Wang S S 2010 J. Electron Spectrosc. Relat. Phenom. 177 30 [21] Du M L 1989 Phys. Rev. A 40 4984 063202-7
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•  Citation:
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• Abstract views:  1865
• Cited By: 0
##### Publishing process
• Received Date:  12 June 2011
• Accepted Date:  30 June 2011
• Published Online:  20 March 2012

## Photo-detachment of hydrogen negative ion in a magnetic field near a dielectric surface

###### Corresponding author: Wang De-Hua, jnwdh@sohu.com;
• 1. College of Physics, Ludong University, Yantai 264025, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 11074104, 10604045) and the High Educational Science and Technology Program of Shandong Province, China (Grant No. J09LA02).

Abstract: Using the closed orbit theory, we study the photo-detachment of H- in a magnetic field near a dielectric surface. The photo-detachment cross section of this system is also derived and calculated. It is found that the photo-detachment cross section is not only related to the magnetic field strength, but also depends on the dielectric constant. For a given ion-surface distance and dielectric constant, with the increase of the magnetic field strength, the number of the closed orbits increases greatly and the oscillatory structure in the photo-detachment cross section becomes much more complicated. On the other hand, for a given magnetic field strength, the dielectric constant also has a great influence on the photo-detachment process of negative ion. Above the ionization threshold, the photo-detachment cross section becomes oscillatory. With the increase of the dielectric constant, the oscillatory structure in the cross-section becomes much more complicated. Therefore we can control the photo-detachment of negative ion by changing the magnetic field strength and the dielectric constant. This study provides a new understanding of the photo-detachment process of negative ion in the presence of external fields and surfaces.

Reference (21)

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