Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Photoluminescence studies of the neutral vacancy defect known as GR1 centre in diamond

Wang Kai-Yue Li Zhi-Hong Tian Yu-Ming Zhu Yu-Mei Zhao Yuan-Yuan Chai Yue-Sheng

Photoluminescence studies of the neutral vacancy defect known as GR1 centre in diamond

Wang Kai-Yue, Li Zhi-Hong, Tian Yu-Ming, Zhu Yu-Mei, Zhao Yuan-Yuan, Chai Yue-Sheng
PDF
Get Citation
  • The single isolate vacancy in diamond exists in three charged states, neutral, negative and positive; and many complicated defects such as di-vacancies, impurities-vacancy complexes could also be formed in diamond. In this paper, we investigate the optical properties of the irradiation-induced neutral vacancy in diamond by low-temperature micro-photoluminescence technology, which will play a guiding significant role in the further studies of the complex defects in diamond.
    • Funds: Project supported by China Scholarship Council (Grant No. 2010625044) and the Doctoral Initiating Project of Taiyuan University of Science and Technology, China (Grant No. 20122044).
    [1]

    Wang K Y, Li Z H, Gao K, Zhu Y M 2012 Acta Phys. Sin. 61 097803 (in Chinese) [王凯悦, 李志宏, 高凯, 朱玉梅 2012 物理学报 61 097803]

    [2]

    Wang K Y 2012 Ph. D. Dissertation (Tianjin: Tianjin University) (in Chinese) [王凯悦 2012 博士学位论文(天津: 天津大学)]

    [3]

    Mainwood A, Stoneham A M 1997 J. Phys.: Condens. Matter 9 2453

    [4]

    Clark C D, Ditchburn R W, Dyer H B 1956 Proc. Royal Soc. A 234 363

    [5]

    Fuchs G D, Dobrovitski V V, Toyli D M, Heremans F J, Weis C D, Schenkel T, Awschalom D 2010 Nature Phys. 6 668

    [6]

    Abtew T A, Sun Y Y, Shih B C, Dev P, Zhang S B, Zhang P 2011 Phys. Rev. Lett. 107 146403

    [7]

    Allers L, Collins A T, Hiscock J 1998 Diamond Relat. Mater. 7 228

    [8]

    Davies G, Collins A T 1993 Diamond Relat. Mater. 2 80

    [9]

    Kohn W 1954 Phys. Rev. A 94 1409

    [10]

    Bourgoin J C, Lannoo M 1981 In Point Defects in Semiconductors (Vol. 1) (Berlin: Springer)

    [11]

    Charles S J, Steeds J W, Bulter J E, Evans D J F 2003 J. Appl. Phys. 94 3091

    [12]

    Wang K Y, Li Z H, Zhang B, Zhu Y M 2012 Acta Phys. Sin. 61 127804 (in Chinese) [王凯悦, 李志宏, 张博, 朱玉梅 2012 物理学报 61 127804]

    [13]

    Walker J 1979 Rep. Prog. Phys. 42 1605

    [14]

    Davies G, Campbell B, Mainwood A, Newton M, Wartkins M, Kanda H, Anthony T R 2001 Phys. Status Solidi (A) 186 187

    [15]

    Wang K Y, Steeds J, Li Z H 2012 Diamond Relat. Mater. 25 29

    [16]

    Steeds J W, Sullivan W, Wotherspoon A, Hayes J M 2009 J. Phys.: Condens. Matter 21 364219

    [17]

    Steeds J W, Charles S J, Davis T J, Griffin I 2000 Diamond Relat. Mater. 9 397

    [18]

    Davies G, Nazaré M H, Hamer M F 1976 Proc. Royal Soc. London A 351 245

    [19]

    van Wyk J A 1982 J. Phys. C: Solid State Phys. 15 L981

    [20]

    Mainwood A 1999 Diamond Relat. Mater. 8 1560

    [21]

    Davies G, Manson N B 1994 EMIS Data Reviews Series No 9 by Davies G ed. (London: INSPEC) Chapter 5.3 159

  • [1]

    Wang K Y, Li Z H, Gao K, Zhu Y M 2012 Acta Phys. Sin. 61 097803 (in Chinese) [王凯悦, 李志宏, 高凯, 朱玉梅 2012 物理学报 61 097803]

    [2]

    Wang K Y 2012 Ph. D. Dissertation (Tianjin: Tianjin University) (in Chinese) [王凯悦 2012 博士学位论文(天津: 天津大学)]

    [3]

    Mainwood A, Stoneham A M 1997 J. Phys.: Condens. Matter 9 2453

    [4]

    Clark C D, Ditchburn R W, Dyer H B 1956 Proc. Royal Soc. A 234 363

    [5]

    Fuchs G D, Dobrovitski V V, Toyli D M, Heremans F J, Weis C D, Schenkel T, Awschalom D 2010 Nature Phys. 6 668

    [6]

    Abtew T A, Sun Y Y, Shih B C, Dev P, Zhang S B, Zhang P 2011 Phys. Rev. Lett. 107 146403

    [7]

    Allers L, Collins A T, Hiscock J 1998 Diamond Relat. Mater. 7 228

    [8]

    Davies G, Collins A T 1993 Diamond Relat. Mater. 2 80

    [9]

    Kohn W 1954 Phys. Rev. A 94 1409

    [10]

    Bourgoin J C, Lannoo M 1981 In Point Defects in Semiconductors (Vol. 1) (Berlin: Springer)

    [11]

    Charles S J, Steeds J W, Bulter J E, Evans D J F 2003 J. Appl. Phys. 94 3091

    [12]

    Wang K Y, Li Z H, Zhang B, Zhu Y M 2012 Acta Phys. Sin. 61 127804 (in Chinese) [王凯悦, 李志宏, 张博, 朱玉梅 2012 物理学报 61 127804]

    [13]

    Walker J 1979 Rep. Prog. Phys. 42 1605

    [14]

    Davies G, Campbell B, Mainwood A, Newton M, Wartkins M, Kanda H, Anthony T R 2001 Phys. Status Solidi (A) 186 187

    [15]

    Wang K Y, Steeds J, Li Z H 2012 Diamond Relat. Mater. 25 29

    [16]

    Steeds J W, Sullivan W, Wotherspoon A, Hayes J M 2009 J. Phys.: Condens. Matter 21 364219

    [17]

    Steeds J W, Charles S J, Davis T J, Griffin I 2000 Diamond Relat. Mater. 9 397

    [18]

    Davies G, Nazaré M H, Hamer M F 1976 Proc. Royal Soc. London A 351 245

    [19]

    van Wyk J A 1982 J. Phys. C: Solid State Phys. 15 L981

    [20]

    Mainwood A 1999 Diamond Relat. Mater. 8 1560

    [21]

    Davies G, Manson N B 1994 EMIS Data Reviews Series No 9 by Davies G ed. (London: INSPEC) Chapter 5.3 159

  • [1] Hu Xiao-Jun, Dai Yong-Bing, He Xian-Chang, Shen He-Sheng, Li Rong-Bin. . Acta Physica Sinica, 2002, 51(6): 1388-1392. doi: 10.7498/aps.51.1388
    [2] Chen Long, Chen Cheng-Ke, Li Xiao, Hu Xiao-Jun. Effects of oxidation on silicon vacancy photoluminescence and microstructure of separated domain formed nanodiamond films. Acta Physica Sinica, 2019, 68(16): 168101. doi: 10.7498/aps.68.20190422
    [3] Jin Zhi-Hao, Wen Chao, Sun De-Yu, Li Xun, Guan Jin-Qing, Liu Xiao-Xin, Lin Ying-Rui, Tang Shi-Ying, Zhou Gang, Lin Jun-De. Nano-graphite synthesized by explosive detonation and its application in preparing diamond under high-pressure and high-temperature. Acta Physica Sinica, 2004, 53(4): 1260-1264. doi: 10.7498/aps.53.1260
    [4] Wang Kai-Yue, Li Zhi-Hong, Zhang Bo, Zhu Yu-Mei. Investigation of vibronic structures of optical centres in diamond by photoluminescence spectra. Acta Physica Sinica, 2012, 61(12): 127804. doi: 10.7498/aps.61.127804
    [5] Tian Yu-Ming, Wang Kai-Yue, Li Zhi-Hong, Zhu Yu-Mei, Chai Yue-Sheng, Zeng Yu-Shun, Wang Qiang. Effect of high-energy electron exposure on the charge states of defects in diamond. Acta Physica Sinica, 2013, 62(18): 188101. doi: 10.7498/aps.62.188101
    [6] Yan Bing-Min, Jia Xiao-Peng, Qin Jie-Ming, Sun Shi-Shuai, Zhou Zhen-Xiang, Fang Chao, Ma Hong-An. Characterization of typical infrared characteristic peaks of hydrogen in nitrogen and hydrogen co-doped diamond crystals. Acta Physica Sinica, 2014, 63(4): 048101. doi: 10.7498/aps.63.048101
    [7] Lin Xue-Ling, Pan Feng-Chun. The magnetism study of N-doped diamond. Acta Physica Sinica, 2013, 62(16): 166102. doi: 10.7498/aps.62.166102
    [8] Hu Xiao-Jun, Li Rong-Bin, Shen He-Sheng, He Xian-Chang, Deng Wen, Luo Li-Xiong. Investigation of defect properties in doped diamond films. Acta Physica Sinica, 2004, 53(6): 2014-2018. doi: 10.7498/aps.53.2014
    [9] Zhang Xiu-Zhi, Wang Kai-Yue, Li Zhi-Hong, Zhu Yu-Mei, Tian Yu-Ming, Chai Yue-Sheng. Effect of nitrogen on the defect luminescence in diamond. Acta Physica Sinica, 2015, 64(24): 247802. doi: 10.7498/aps.64.247802
    [10] Li Rong-Bin, Dai Yong-Bing, Hu Xiao-Jun, Shen He-Sheng, He Xian-Chang. A molecular dynamics study of energetic particle bombardment on diamond. Acta Physica Sinica, 2003, 52(12): 3135-3141. doi: 10.7498/aps.52.3135
  • Citation:
Metrics
  • Abstract views:  985
  • PDF Downloads:  509
  • Cited By: 0
Publishing process
  • Received Date:  23 September 2012
  • Accepted Date:  12 November 2012
  • Published Online:  20 March 2013

Photoluminescence studies of the neutral vacancy defect known as GR1 centre in diamond

  • 1. School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030014, China;
  • 2. Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China
Fund Project:  Project supported by China Scholarship Council (Grant No. 2010625044) and the Doctoral Initiating Project of Taiyuan University of Science and Technology, China (Grant No. 20122044).

Abstract: The single isolate vacancy in diamond exists in three charged states, neutral, negative and positive; and many complicated defects such as di-vacancies, impurities-vacancy complexes could also be formed in diamond. In this paper, we investigate the optical properties of the irradiation-induced neutral vacancy in diamond by low-temperature micro-photoluminescence technology, which will play a guiding significant role in the further studies of the complex defects in diamond.

Reference (21)

Catalog

    /

    返回文章
    返回