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Sub-diffraction-limit fabrication of 6H-SiC with femtosecond laser

Yun Zhi-Qiang Wei Ru-Sheng Li Wei Luo Wei-Wei Wu Qiang Xu Xian-Gang Zhang Xin-Zheng

Sub-diffraction-limit fabrication of 6H-SiC with femtosecond laser

Yun Zhi-Qiang, Wei Ru-Sheng, Li Wei, Luo Wei-Wei, Wu Qiang, Xu Xian-Gang, Zhang Xin-Zheng
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  • Sub-diffraction-limit fabrication of 6H-SiC is investigated with femtosecond laser direct-write setup. Micro/nano-fabrication on 6H-SiC is studied with a home-made micro/nano-fabrication platform, which is integrated with a fluorescence microscope and a Ti:sapphire laser with a central wavelength of 800 nm and pulse duration of 130 fs. Micro/nano-structures are characterized with scanning electron microscope. It is found that the spatial resolution is improved with the decrease of laser power and the increase of scanning velocity. The smallest resolution achieved is 125 nm and line array with a line width of 240 nm and a period of 1 μm is fabricated. This work paves the new way for integrated micro electro-mechanical systems devices.
    • Funds: Project supported by National Basic Research Program of China (Grant Nos. 2010CB934101, 2012CB934201), the International S & T Cooperation Program of China (Grant No. 2011DFA52870), International Cooperation Program of Tianjin (Grant No. 11ZCGHHZ01000), and the Fundamental Research Funds for the Central Universities, China.
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    Huang W, Chen Z Z, Chen B Y, Zhang J Y, Yan C F, Xiao B, Shi E W 2009 Acta Phys. Sin. 58 3443 (in Chinese) [黄维, 陈之战, 陈博源, 张静玉, 严成峰, 肖兵, 施尔畏 2009 物理学报 58 3443]

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    Farsari M, Filippidis G, Zoppel S, Reider G A, Fotakis C 2005 J. Micromech. Microeng. 15 1786

    [19]

    Zoppel S, Farsari M, Merz R, Zehetner J, Stangl G, Reider G A, Fotakis C 2005 Microelectronic Engineering 83 1400

    [20]

    Desbiens J P, Masson P 2007 Sensors and Actuators A 136 554

    [21]

    Kawata S, Sun H B, Tanaka T, Takada K 2001 Nature 412 697

    [22]

    Dong X Z, Chen W Q, Zhao Z S, Duan X M 2008 Sci. China 53 2 (in Chinese) [董贤子, 陈卫强, 赵震声, 段宣明 2008 中国科学 53 2]

    [23]

    Kang C Y, Tang J, Li L M, Pan H B, Yan W S, Xu P S, Wei S Q, Chen X F, Xu X G 2011 Acta Phys. Sin. 60 047302 (in Chinese) [康朝阳, 唐军, 李利民, 潘海斌, 闫文盛, 徐彭寿, 韦世强, 陈秀芳, 徐现刚 2011 物理学报 60 047302]

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  • [1]

    Pecholt B, Gupta S, Molian P 2011 J. Laser Appl. 23 1

    [2]

    Sarro P M 2000 Sensors and Actuators 82 210

    [3]

    Zetterling C M 2002 Process Technology for Silicon Carbide Devices p7

    [4]

    Shang Y C, Zhang Y M, Zhang Y M 2000 Acta Phys. Sin. 49 1786 (in Chinese) [尚也淳, 张义门, 张玉明 2000 物理学报 49 1786]

    [5]

    Xu C F, Yang Y T, Liu L 2002 Acta Phys. Sin. 51 1113 (in Chinese) [徐昌发, 杨银堂, 刘莉 2002 物理学报 51 1113]

    [6]

    Okojie R S, Ned A A, Kurtz A D 1998 Sensors and Actuators A 66 200

    [7]

    Pakula L S, Yang H, Pham H T M, French P J, Sarro P M 2004 J. Micromech. Microeng. 14 1478

    [8]

    Young D J, Du J G, Zorman C A, Ko W H 2004 IEEE Sensors Journal 4 464

    [9]

    Atwell A R, Okojie R S, Kornegay K T, Roberson S L, Beliveau A 2003 Sensors and Actuators A 104 11

    [10]

    Pecholt B, Vendan M, Dong Y Y, Molian P 2008 Int. J. Adv. Manuf. Technol. 39 239

    [11]

    Yasseen A A, Wu C H, Zorman C A, Mehregany M 2000 IEEE Electron Device Letters 21 164

    [12]

    Zhou Y H, Zhang Y M, Zhang Y M, Meng X Z 2004 Acta Phys. Sin. 53 3710 (in Chinese) [周拥华, 张义门, 张玉明, 孟祥志 2004 物理学报 53 3710]

    [13]

    Tang X Y, Zhang Y M, Zhang Y M, Gao J X 2004 Chin. Phys. 13 1110

    [14]

    Tang X Y, Zhang Y M, Zhang Y M, Gao J X 2005 Chin. Phys. 14 583

    [15]

    Hossain T K, Maclaren S, Engel J M, Liu C, Adesida I, Okojie R S 2006 J. Micromech. Microeng. 16 751

    [16]

    Chai C C, Yang Y T, Li Y J, Jia H J, Han J 2001 Res. Prog. SSE 21 109 (in Chinese) [柴常春, 杨银堂, 李跃进, 贾护军, 韩键 2001 固体电子学研究与进展 21 109]

    [17]

    Huang W, Chen Z Z, Chen B Y, Zhang J Y, Yan C F, Xiao B, Shi E W 2009 Acta Phys. Sin. 58 3443 (in Chinese) [黄维, 陈之战, 陈博源, 张静玉, 严成峰, 肖兵, 施尔畏 2009 物理学报 58 3443]

    [18]

    Farsari M, Filippidis G, Zoppel S, Reider G A, Fotakis C 2005 J. Micromech. Microeng. 15 1786

    [19]

    Zoppel S, Farsari M, Merz R, Zehetner J, Stangl G, Reider G A, Fotakis C 2005 Microelectronic Engineering 83 1400

    [20]

    Desbiens J P, Masson P 2007 Sensors and Actuators A 136 554

    [21]

    Kawata S, Sun H B, Tanaka T, Takada K 2001 Nature 412 697

    [22]

    Dong X Z, Chen W Q, Zhao Z S, Duan X M 2008 Sci. China 53 2 (in Chinese) [董贤子, 陈卫强, 赵震声, 段宣明 2008 中国科学 53 2]

    [23]

    Kang C Y, Tang J, Li L M, Pan H B, Yan W S, Xu P S, Wei S Q, Chen X F, Xu X G 2011 Acta Phys. Sin. 60 047302 (in Chinese) [康朝阳, 唐军, 李利民, 潘海斌, 闫文盛, 徐彭寿, 韦世强, 陈秀芳, 徐现刚 2011 物理学报 60 047302]

    [24]

    Tomita T, Okada T, Kawahara T, Kumai R, Matsuo S, Hashimoto S, Kawamoto M, Yamaguchi M, Ueno S, Shindou E, Yoshida A 2010 Appl. Phys. A 100 113

  • [1] Deng Fa-Ming. Effect of intense laser irradiation on the electronic properties of 6H-SiC. Acta Physica Sinica, 2016, 65(10): 107101. doi: 10.7498/aps.65.107101
    [2] SHANG YE-CHUN, ZHANG YI-MEN, ZHANG YU-MING. MONTE CARLO SIMULATION OF ELECTRON TRANSPORT IN 6H-SiC. Acta Physica Sinica, 2000, 49(9): 1786-1791. doi: 10.7498/aps.49.1786
    [3] Qin Xi-Feng, Wang Feng-Xiang, Liang Yi, Fu Gang, Zhao You-Mei. Investigation of the lateral spread of Er ions implanted in 6H-SiC. Acta Physica Sinica, 2010, 59(9): 6390-6393. doi: 10.7498/aps.59.6390
    [4] Kang Chao-Yang, Tang Jun, Li Li-Min, Pan Hai-Bin, Yan Wen-Sheng, Xu Peng-Shou, Wei Shi-Qiang, Chen Xiu-Fang, Xu Xian-Gang. Preparation of graphene on different-polarity 6H-SiC substrates and the study of their electronic structures. Acta Physica Sinica, 2011, 60(4): 047302. doi: 10.7498/aps.60.047302
    [5] Du Yang-Yang, Li Bing-Sheng, Wang Zhi-Guang, Sun Jian-Rong, Yao Cun-Feng, Chang Hai-Long, Pang Li-Long, Zhu Ya-Bin, Cui Ming-Huan, Zhang Hong-Peng, Li Yuan-Fei, Wang Ji, Zhu Hui-Ping, Song Peng, Wang Dong. Spectra study of He-irradiation induced defects in 6H-SiC. Acta Physica Sinica, 2014, 63(21): 216101. doi: 10.7498/aps.63.216101
    [6] Zhou Yong-Hua, Zhang Yi-Men, Zhang Yu-Ming, Meng Xiang-Zhi. Simulation and analysis of 6H-SiC pn junction ultraviolet photodetector. Acta Physica Sinica, 2004, 53(11): 3710-3715. doi: 10.7498/aps.53.3710
    [7] SHANG YE-CHUN, ZHANG YI-MEN, ZHANG YU-MING. MONTE CARLO STUDY ON INTERFACE ROUGHNESS DEPENDENCE OF ELECTRON MOBILITY IN 6H-SiC INVERSION LAYERS. Acta Physica Sinica, 2001, 50(7): 1350-1354. doi: 10.7498/aps.50.1350
    [8] Zhang Qian, Li Meng, Gong Qi-Huang, Li Yan. Femtosecond laser direct writing of optical quantum logic gates. Acta Physica Sinica, 2019, 68(10): 104205. doi: 10.7498/aps.68.20190024
    [9] Wei Wei-Hua, Li Mu-Tian, Liu Mo-Nan. Coupled microcavities with unidirectional single mode via femtosecond laser direct-writing. Acta Physica Sinica, 2018, 67(6): 064203. doi: 10.7498/aps.67.20172395
    [10] Zhang Chong-Hong, Zhang Hong-Hua, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong. Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica, 2009, 58(5): 3302-3308. doi: 10.7498/aps.58.3302
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  • Received Date:  22 August 2012
  • Accepted Date:  23 October 2012
  • Published Online:  20 March 2013

Sub-diffraction-limit fabrication of 6H-SiC with femtosecond laser

  • 1. The KOE Laboratory of Weak-Light Nonlinear Photonics, School of Physics & TEDA Applied Physics School, Nankai University, Tianjin 300457, China;
  • 2. State Key Labboratory of Crystal Materials, Shandong University, Jinan 250100, China
Fund Project:  Project supported by National Basic Research Program of China (Grant Nos. 2010CB934101, 2012CB934201), the International S & T Cooperation Program of China (Grant No. 2011DFA52870), International Cooperation Program of Tianjin (Grant No. 11ZCGHHZ01000), and the Fundamental Research Funds for the Central Universities, China.

Abstract: Sub-diffraction-limit fabrication of 6H-SiC is investigated with femtosecond laser direct-write setup. Micro/nano-fabrication on 6H-SiC is studied with a home-made micro/nano-fabrication platform, which is integrated with a fluorescence microscope and a Ti:sapphire laser with a central wavelength of 800 nm and pulse duration of 130 fs. Micro/nano-structures are characterized with scanning electron microscope. It is found that the spatial resolution is improved with the decrease of laser power and the increase of scanning velocity. The smallest resolution achieved is 125 nm and line array with a line width of 240 nm and a period of 1 μm is fabricated. This work paves the new way for integrated micro electro-mechanical systems devices.

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