Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

60Coγ-radiation effects on the ideality factor of AlxGa1?xN p-i-n solar-blind detector with high content of aluminum

Zhang Xiao-Fu Li Yu-Dong Guo Qi Luo Mu-Chang He Cheng-Fa Yu Xin Shen Zhi-Hui Zhang Xing-Yao Deng Wei Wu Zheng-Xin

60Coγ-radiation effects on the ideality factor of AlxGa1?xN p-i-n solar-blind detector with high content of aluminum

Zhang Xiao-Fu, Li Yu-Dong, Guo Qi, Luo Mu-Chang, He Cheng-Fa, Yu Xin, Shen Zhi-Hui, Zhang Xing-Yao, Deng Wei, Wu Zheng-Xin
PDF
Get Citation
  • High Al content AlxGa1-xN solar-blind photodetector and Si p-i-n visible light detector were irradiated with 60Co γ-rays up to 0.1, 1, 10 Mrad(Si). With the increase of total radiation dose, the ideality factor of AlxGa1-xN p-i-n diode saw a significant rise and the ideality factor n is grater than 2 with a total dose up to 10 Mrad(Si); the ideality factor of Si p-i-n diode, however, changed only slightly even up to 10 Mrad(Si). The degradation of AlxGa1-xN p-i-n diode might be attributed to the deterioration of Ohmic contacts, however, to some extent, the slight increase of the Si p-i-n diode might be due to the degradation of the insensitive layer.
    [1]

    Long J P, Varadaraajan S, Matthews J, Schetzina J F 2002 Opto-Electronics Review 10 251

    [2]

    Kolb C E, Ryali S B, Wormhoudt J C 1988 Proc. SPIE 0932 2

    [3]

    Yan T J, Chong M, Zhao D G, Zhang S, Chen L H 2011 Inrared and Laser Engineering 40 32 (in Chinese) [颜廷静, 种明, 赵德刚, 张爽, 陈良惠 2011 红外与激光工程 40 32]

    [4]

    Zhang L Q, Zhang C H, Yang Y T, Yao C F, Li B S, Sun Y M and Song S J 2009 Chin. Phys. Lett. 26 036101

    [5]

    Claeys C, Simoen E (Translated by Liu Z L) 2008 Radiation Effects in Advanced Semiconductor Materials and Devices (Beijing: National Defence Industry Press) p20 (in Chinese) [Claeys C, Simoen E著, 刘忠立译 2008 先进半导体材料及器件的辐射效应 (北京: 国防工业出版社) 第20页]

    [6]

    Lv L, Zhang J C, Li L, Ma X H, Cao Y R and Hao Y 2012 Acta Phys. Sin. 61 057202 (in Chinese) [吕玲, 张进成, 李亮, 马晓华, 曹艳荣, 郝跃 2012 物理学报 61 057202]

    [7]

    Ohyama H, Takakura K, Hanada M, Nagano T, Yoshino K, Nakashima T, Kuboyama S, Simoen E, Claeys C 2010 Materials Science and Engineering B 173 57

    [8]

    Aktas O, Kuliev A, Kumar V, Schwindt R, Toshkov S, Costescu D, Stubbins J, Adesida I 2004 Solid-State Electronics 48 471

    [9]

    Fan L, Hao Y, Zhao Y F, Zhang J C, Gao Z Y, Li P X 2009 Chin. Phys. B 18 2912

    [10]

    Hu X, Choi B K, Barnaby H J, Fleetwood D M, Schrimpf R D, Lee S, Shojah-Ardalan S, Wilkins R, Mishra U M, Dettmer R W 2004 IEEE Trans. Nucl. Sci. 51 293

    [11]

    Nedelcescu A L, Carlone C, Houdayer A, Bardeleben H J, Cantin J L, Raymond S 2002 IEEE Trans. Nucl. Sci. 49 2733

    [12]

    Hong-Yeol Kim, Travis Anderson, Michael A. Mastro, Jaime A. Freitas Jr, Soohwan Jang, Jennifer Hite, Charles R. Eddy Jr, Jihyun Kim 2011 Journal of Crystal Growth 326 62

    [13]

    Hong-Yeol Kim, Fan Ren, Pearton S J, Jihyun Kim 2009 Electrochemical and Solid-State Letters 12 173

    [14]

    Gu W P, Zhang J C, Wang C, Feng Q, Ma X H, Hao Y 2009 Acta Phys. Sin. 58 1161 (in Chinese) [谷文萍, 张进城, 王冲, 冯倩, 马晓华, 郝跃 2009 物理学报 58 1161]

    [15]

    Khanna S M, Diego Estan, Erhardt L S, Alain Houdayer, Cosmo Carlone, Ionascut-Nedelcescu A, Messenger S R, Walters R J, Summers G P, Warner J H, Insoo Jun 2004 IEEE Trans. Nucl. Sci. 51 2729

    [16]

    Khanna S M, Webb J, Tang H, Haudayer A J, Carlone C 2000 IEEE Trans. Nucl. Sci. 47 2322

    [17]

    Look D C, Reynolds D C, Hemsky J W, Sizelove J R, Jones R L, Molnar R J 1997 Phys. Rev. Lett. 79 2273

    [18]

    Koike J, Parkin D M, Mitchell T E 1992 Appl. Phys. Lett. 60 1450

    [19]

    Zhang M L, Wang X L, Xiao H L, Wang C M, Ran J X, Hu G X 2008 Chin. Phys.Lett. 25 1045

    [20]

    Jin Y Z, Hu Y P, Zeng X H, Yang Y J 2010 Acta Phys. Sin. 59 1258 (in Chinese) [金豫浙, 胡益培, 曾祥华, 杨义军 2010 物理学报 59 1258]

    [21]

    Shmidt N M, Davydov D V, Emtsev V V, Krestnikov I L, Lebedev A A, Lundin W V, Poloskin D S, Sakharov A V, Usikov A S, Osinsky A V 1999 Phys. Stat. Sol. (b) 216 533

    [22]

    Feng F F, Liu J L, Qiu C, Wang G X and Jiang F Y 2010 Acta Phys. Sin. 59 5706 (in Chinese) [封飞飞, 刘军林, 邱冲, 王光绪, 江风益 2010 物理学报 59 5706]

    [23]

    Wang G X, Tao X X, Xiong C B, Liu J L, Feng F F, Zhang M, Jiang F Y 2011 Acta Phys. Sin. 60 078503 (in Chinese) [王光绪, 陶喜霞, 熊传兵, 刘军林, 封飞飞, 张萌, 江风益 2011 物理学报 60 078503]

    [24]

    Wang X Y, Chong M, Zhao D G, Su Y M 2012 Acta Phys. Sin. 61 217302 (in Chinese) [王晓勇, 种明, 赵德刚, 苏艳梅 2012 物理学报 61 217302]

    [25]

    Ding Z B, Wang K, Chen T X, Chen D, Yao S D 2008 Acta Phys. Sin. 57 2445 (in Chinese) [丁志博, 王坤, 陈田祥, 陈迪, 姚淑德 2008 物理学报 57 2445]

    [26]

    Charles Joseph Collins 2002 Ph. D. Dissertation ( Austin: University of Texas)

    [27]

    Fan L, Zhang J C, Li P X, Hao Y 2003 Chin. J. Semiconduct. 24 937 (in Chinese) [范隆, 张进城, 李培咸, 郝跃 2003 半导体学报 24 937]

    [28]

    Umana-Membreno G A, Dell J M, Parish G, Nener B D, Faraone L, Mishra U K 2003 IEEE Transactions on Electronics Devices 50 2326

    [29]

    Belyaev A E, Boltovets N S, Ivanov V N, Kapitanchuk L M, Konakova R V, Kudryk Ya Ya, Lytvyn O S, Milenin V V, Sheremet V N, Sveshnikov Y N 2009 Semiconductor Structures, Interfaces And Surfaces 43 904

    [30]

    Cheng C J, Si J J, Lu Z X,Zhao H Y, Zhao L, Ding J X, Sun W G, Chen Z Z, Zhang G Y 2006 Infrared 27 20 (in Chinese) [成彩晶, 司俊杰, 鲁正雄, 赵鸿燕, 赵岚, 丁嘉欣, 孙维国, 陈志忠, 张国义 2006 红外 27 20]

    [31]

    Shah J M, Li Y L, Gessmann Th, Schubert E F 2003 J. Appl. Phys. 94 2627

    [32]

    Rhoderick E H, Williams R H 1988 Metal Semiconductor Conta cts (2nd Edn.) (Oxford: Oxford University Press) p129

  • [1]

    Long J P, Varadaraajan S, Matthews J, Schetzina J F 2002 Opto-Electronics Review 10 251

    [2]

    Kolb C E, Ryali S B, Wormhoudt J C 1988 Proc. SPIE 0932 2

    [3]

    Yan T J, Chong M, Zhao D G, Zhang S, Chen L H 2011 Inrared and Laser Engineering 40 32 (in Chinese) [颜廷静, 种明, 赵德刚, 张爽, 陈良惠 2011 红外与激光工程 40 32]

    [4]

    Zhang L Q, Zhang C H, Yang Y T, Yao C F, Li B S, Sun Y M and Song S J 2009 Chin. Phys. Lett. 26 036101

    [5]

    Claeys C, Simoen E (Translated by Liu Z L) 2008 Radiation Effects in Advanced Semiconductor Materials and Devices (Beijing: National Defence Industry Press) p20 (in Chinese) [Claeys C, Simoen E著, 刘忠立译 2008 先进半导体材料及器件的辐射效应 (北京: 国防工业出版社) 第20页]

    [6]

    Lv L, Zhang J C, Li L, Ma X H, Cao Y R and Hao Y 2012 Acta Phys. Sin. 61 057202 (in Chinese) [吕玲, 张进成, 李亮, 马晓华, 曹艳荣, 郝跃 2012 物理学报 61 057202]

    [7]

    Ohyama H, Takakura K, Hanada M, Nagano T, Yoshino K, Nakashima T, Kuboyama S, Simoen E, Claeys C 2010 Materials Science and Engineering B 173 57

    [8]

    Aktas O, Kuliev A, Kumar V, Schwindt R, Toshkov S, Costescu D, Stubbins J, Adesida I 2004 Solid-State Electronics 48 471

    [9]

    Fan L, Hao Y, Zhao Y F, Zhang J C, Gao Z Y, Li P X 2009 Chin. Phys. B 18 2912

    [10]

    Hu X, Choi B K, Barnaby H J, Fleetwood D M, Schrimpf R D, Lee S, Shojah-Ardalan S, Wilkins R, Mishra U M, Dettmer R W 2004 IEEE Trans. Nucl. Sci. 51 293

    [11]

    Nedelcescu A L, Carlone C, Houdayer A, Bardeleben H J, Cantin J L, Raymond S 2002 IEEE Trans. Nucl. Sci. 49 2733

    [12]

    Hong-Yeol Kim, Travis Anderson, Michael A. Mastro, Jaime A. Freitas Jr, Soohwan Jang, Jennifer Hite, Charles R. Eddy Jr, Jihyun Kim 2011 Journal of Crystal Growth 326 62

    [13]

    Hong-Yeol Kim, Fan Ren, Pearton S J, Jihyun Kim 2009 Electrochemical and Solid-State Letters 12 173

    [14]

    Gu W P, Zhang J C, Wang C, Feng Q, Ma X H, Hao Y 2009 Acta Phys. Sin. 58 1161 (in Chinese) [谷文萍, 张进城, 王冲, 冯倩, 马晓华, 郝跃 2009 物理学报 58 1161]

    [15]

    Khanna S M, Diego Estan, Erhardt L S, Alain Houdayer, Cosmo Carlone, Ionascut-Nedelcescu A, Messenger S R, Walters R J, Summers G P, Warner J H, Insoo Jun 2004 IEEE Trans. Nucl. Sci. 51 2729

    [16]

    Khanna S M, Webb J, Tang H, Haudayer A J, Carlone C 2000 IEEE Trans. Nucl. Sci. 47 2322

    [17]

    Look D C, Reynolds D C, Hemsky J W, Sizelove J R, Jones R L, Molnar R J 1997 Phys. Rev. Lett. 79 2273

    [18]

    Koike J, Parkin D M, Mitchell T E 1992 Appl. Phys. Lett. 60 1450

    [19]

    Zhang M L, Wang X L, Xiao H L, Wang C M, Ran J X, Hu G X 2008 Chin. Phys.Lett. 25 1045

    [20]

    Jin Y Z, Hu Y P, Zeng X H, Yang Y J 2010 Acta Phys. Sin. 59 1258 (in Chinese) [金豫浙, 胡益培, 曾祥华, 杨义军 2010 物理学报 59 1258]

    [21]

    Shmidt N M, Davydov D V, Emtsev V V, Krestnikov I L, Lebedev A A, Lundin W V, Poloskin D S, Sakharov A V, Usikov A S, Osinsky A V 1999 Phys. Stat. Sol. (b) 216 533

    [22]

    Feng F F, Liu J L, Qiu C, Wang G X and Jiang F Y 2010 Acta Phys. Sin. 59 5706 (in Chinese) [封飞飞, 刘军林, 邱冲, 王光绪, 江风益 2010 物理学报 59 5706]

    [23]

    Wang G X, Tao X X, Xiong C B, Liu J L, Feng F F, Zhang M, Jiang F Y 2011 Acta Phys. Sin. 60 078503 (in Chinese) [王光绪, 陶喜霞, 熊传兵, 刘军林, 封飞飞, 张萌, 江风益 2011 物理学报 60 078503]

    [24]

    Wang X Y, Chong M, Zhao D G, Su Y M 2012 Acta Phys. Sin. 61 217302 (in Chinese) [王晓勇, 种明, 赵德刚, 苏艳梅 2012 物理学报 61 217302]

    [25]

    Ding Z B, Wang K, Chen T X, Chen D, Yao S D 2008 Acta Phys. Sin. 57 2445 (in Chinese) [丁志博, 王坤, 陈田祥, 陈迪, 姚淑德 2008 物理学报 57 2445]

    [26]

    Charles Joseph Collins 2002 Ph. D. Dissertation ( Austin: University of Texas)

    [27]

    Fan L, Zhang J C, Li P X, Hao Y 2003 Chin. J. Semiconduct. 24 937 (in Chinese) [范隆, 张进城, 李培咸, 郝跃 2003 半导体学报 24 937]

    [28]

    Umana-Membreno G A, Dell J M, Parish G, Nener B D, Faraone L, Mishra U K 2003 IEEE Transactions on Electronics Devices 50 2326

    [29]

    Belyaev A E, Boltovets N S, Ivanov V N, Kapitanchuk L M, Konakova R V, Kudryk Ya Ya, Lytvyn O S, Milenin V V, Sheremet V N, Sveshnikov Y N 2009 Semiconductor Structures, Interfaces And Surfaces 43 904

    [30]

    Cheng C J, Si J J, Lu Z X,Zhao H Y, Zhao L, Ding J X, Sun W G, Chen Z Z, Zhang G Y 2006 Infrared 27 20 (in Chinese) [成彩晶, 司俊杰, 鲁正雄, 赵鸿燕, 赵岚, 丁嘉欣, 孙维国, 陈志忠, 张国义 2006 红外 27 20]

    [31]

    Shah J M, Li Y L, Gessmann Th, Schubert E F 2003 J. Appl. Phys. 94 2627

    [32]

    Rhoderick E H, Williams R H 1988 Metal Semiconductor Conta cts (2nd Edn.) (Oxford: Oxford University Press) p129

  • [1] Wang Xiao-Yong, Chong Ming, Zhao De-Gang, Su Yan-Mei. Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact. Acta Physica Sinica, 2012, 61(21): 217302. doi: 10.7498/aps.61.217302
    [2] Bai Jun-Xue, Guo Wei-Ling, Sun Jie, Fan Xing, Han Yu, Sun Xiao, Xu Ru, Lei Jun. Research on the relationship between ideality factor and number of units of GaN-based high voltage light-emitting diode. Acta Physica Sinica, 2015, 64(1): 017303. doi: 10.7498/aps.64.017303
    [3] Feng Fei-Fei, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi, Qiu Chong. N-polar n-type ohmic contact of GaN-based LED on Si substrate. Acta Physica Sinica, 2010, 59(8): 5706-5709. doi: 10.7498/aps.59.5706
    [4] Pan Shu-Wan, Qi Dong-Feng, Chen Song-Yan, Li Cheng, Huang Wei, Lai Hong-Kai. Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact. Acta Physica Sinica, 2011, 60(9): 098108. doi: 10.7498/aps.60.098108
    [5] Huang Ya-Ping, Yun Feng, Ding Wen, Wang Yue, Wang Hong, Zhao Yu-Kun, Zhang Ye, Guo Mao-Feng, Hou Xun, Liu Shuo. The reflectivity and ohmic contact resistivity of Ni/Ag/Ti/Au in contact with p-GaN. Acta Physica Sinica, 2014, 63(12): 127302. doi: 10.7498/aps.63.127302
    [6] Wang Su-Jie, Li Shu-Qiang, Wu Xiao-Ming, Chen Fang, Jiang Feng-Yi. Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP. Acta Physica Sinica, 2020, 69(4): 048103. doi: 10.7498/aps.69.20191720
    [7] Zhu Yan-Xu, Cao Wei-Wei, Xu Chen, Deng Ye, Zou De-Shu. Effect of different ohmic contact pattern on GaN HEMT electrical properties. Acta Physica Sinica, 2014, 63(11): 117302. doi: 10.7498/aps.63.117302
    [8] Li Xiao-Jing, Zhao De-Gang, He Xiao-Guang, Wu Liang-Liang, Li Liang, Yang Jing, Le Ling-Cong, Chen Ping, Liu Zong-Shun, Jiang De-Sheng. Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN. Acta Physica Sinica, 2013, 62(20): 206801. doi: 10.7498/aps.62.206801
    [9] Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun, Zhao Ming-Jie. Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method. Acta Physica Sinica, 2019, 68(17): 178501. doi: 10.7498/aps.68.20190699
    [10] WANG YIN-YUE, ZHEN CONG-MIAN, GONG HENG-XIANG, YAN ZHI-JUN, WANG YA-FAN, LIU XUE-QIN, YANG YING-HU, HE SHAN-HU. MEASUREMENT OF THE SPECIFIC CONTACT RESISTANCE OF Au/Ti/p-DIAMOND USING TRANSMIS SION LINE MODEL. Acta Physica Sinica, 2000, 49(7): 1348-1351. doi: 10.7498/aps.49.1348
    [11] Ding Zhi-Bo, Wang Kun, Chen Tian-Xiang, Chen Di, Yao Shu-De. Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time. Acta Physica Sinica, 2008, 57(4): 2445-2449. doi: 10.7498/aps.57.2445
  • Citation:
Metrics
  • Abstract views:  590
  • PDF Downloads:  537
  • Cited By: 0
Publishing process
  • Received Date:  14 November 2012
  • Accepted Date:  05 December 2012
  • Published Online:  05 April 2013

60Coγ-radiation effects on the ideality factor of AlxGa1?xN p-i-n solar-blind detector with high content of aluminum

  • 1. Xinjiang technical institute of Physics and Chemistry, University of Chinese Academy of Sciences, Urumqi 830011, China;
  • 2. Xinjiang Key Laboratory of Electronic information materials and devices, Urumqi 830011, China;
  • 3. Chongqing Optoelectronics Research Institute, Chongqing 400060, China

Abstract: High Al content AlxGa1-xN solar-blind photodetector and Si p-i-n visible light detector were irradiated with 60Co γ-rays up to 0.1, 1, 10 Mrad(Si). With the increase of total radiation dose, the ideality factor of AlxGa1-xN p-i-n diode saw a significant rise and the ideality factor n is grater than 2 with a total dose up to 10 Mrad(Si); the ideality factor of Si p-i-n diode, however, changed only slightly even up to 10 Mrad(Si). The degradation of AlxGa1-xN p-i-n diode might be attributed to the deterioration of Ohmic contacts, however, to some extent, the slight increase of the Si p-i-n diode might be due to the degradation of the insensitive layer.

Reference (32)

Catalog

    /

    返回文章
    返回