Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

The Effect of DC degradation and heat-treatment on defects in ZnO varistor

Zhao Xue-Tong Li Jian-Ying Jia Ran Li Sheng-Tao

The Effect of DC degradation and heat-treatment on defects in ZnO varistor

Zhao Xue-Tong, Li Jian-Ying, Jia Ran, Li Sheng-Tao
PDF
Get Citation
  • In this research, DC degradation for ZnO varistors at 3.2 kV/cm and 50 mA/cm2 for 115 hours was performed, and its effect on electrical properties and defects of ZnO varistors was investigated. It was found that the breakdown field and nonlinear coefficient drops sharply from 2845 V/cm to 51.6 V/cm and 38.3 to 1.1, respectively, when the DC degradaion time reaches 115 hours. For the degraded sample, the dielectric loss was dominated by the increase of conductivity so that some defect relaxation peaks cannot be observed is the DC degraded ZnO varistors. However, in electrical modulus plot, one relaxation peak can be observed. The conductivity in low frequency range increases greatly and the conductance activation energy drops from 0.84 to 0.083 eV. Additionally, the heat-treatment process of ZnO varistors at 800 ℃ for 24 hours was also performed. It is interesting to note that the electrical properties and the relaxation processes of ZnO varistor is restorable completely again after heat-treatment. The breakdown field and the nonlinear coefficient increase to 3085 V/cm and 50.8, respectively, and the activation energy of conductance increases to 0.88 eV. It is also found that the defect relaxation peak, which is shown in dielectric spectra corresponding to oxygen vacancy defect, is suppressed evidently by heat-retreating. Therefore, it is proposed that oxygen is likely to diffuse into the ZnO grain boundaries at the heat-treatment process, which can play an important role in restorability of the DC degraded ZnO varistor.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 50977071, 51177121).
    [1]

    Gupta T K, Straub W D 1989 J. Appl. Phys. 66 6132

    [2]

    Xu D, Shi L Y, Wu Z H, Zhong Q D, Wu X X 2009 J. Eur. Ceram. Soc. 29 1789

    [3]

    Zhao K Y, Zeng H R, Li G R, Song H Z, Cheng L H, Hui S X, Yin Q R 2009 Chin. Phys. Lett. 26 100701

    [4]

    Li S T, Yang Y, Zhang L, Cheng P F, Li J Y 2009 Chin. Phys. Lett. 26 077201

    [5]

    Zhao X T, Li J Y, Li H, Li S T 2012 Acta Phys. Sin. 61 153103 (in Chinese) [赵学童, 李建英, 李欢, 李盛涛 2012 物理学报 61 153103]

    [6]

    Wang Y P, Cheng P F 2010 Insulators and Surge Arresters 4 34 (in Chinese) [王玉平, 成鹏飞 2010 电瓷避雷器 4 34]

    [7]

    Gupta T K 1990 J. Am. Ceram. Soc. 73 1817

    [8]

    Li S T, Cheng P F, Wang Y P 2008 Insulators and Surge Arresters 4 16 (in Chinese) [李盛涛, 成鹏飞, 王玉平, 朱斌 2008 电瓷避雷器 4 16]

    [9]

    Yin G L, Li J Y, Yao G, Cheng P F, Li S T 2010 Acta Phys. Sin. 59 6345 (in Chinese) [尹桂来, 李建英, 尧广, 成鹏飞, 李盛涛 2010 物理学报 59 6345]

    [10]

    Chen J D, Liu Z Y 1982 Dielectric Physics (Beijing: Mechanical Industry Press) p151 (in Chinese) [陈季丹, 刘子玉 1982 电介质物理学 (北京: 机械工业出版社) 第151页]

    [11]

    Jonscher A K 1996 Universal Relaxation Law (London: Chelsea Dielectrics Press)

    [12]

    Tripathi R, Kumar A, Bharti C, Sinha T P 2010 Curr. Appl. Phys. 10 676

    [13]

    Roling B, Happe A, Funke K, Ingram M D 1997 Phys. Rev. Lett. 78 2160

    [14]

    Yin G L, Li J Y, Li S T 2009 Acta Phys. Sin. 58 4219 (in Chinese) [尹桂来, 李建英, 李盛涛2009 物理学报 58 4219]

    [15]

    Cheng P F, Li S T, Li J Y 2009 Acta Phys. Sin. 58 5721 (in Chinese) [成鹏飞, 李盛涛, 李建英 2009 物理学报 58 5721]

    [16]

    Cheng P, Li S, Zhang L, Li J 2008 Appl. Phys. Lett. 93 012902

    [17]

    Zhao X T, Li J Y, Li S T 2012 J. Appl. Phys. 111 124106

    [18]

    Greuter F 1995 Solid State Ionics 75 67

    [19]

    Li J Y, Li S T, Liu F Y, Alim M A 2006 J Mater Sci: Mater Electron 17 211

    [20]

    Sinclair D C, West A R 1989 J. Appl. Phys. 66 3850

  • [1]

    Gupta T K, Straub W D 1989 J. Appl. Phys. 66 6132

    [2]

    Xu D, Shi L Y, Wu Z H, Zhong Q D, Wu X X 2009 J. Eur. Ceram. Soc. 29 1789

    [3]

    Zhao K Y, Zeng H R, Li G R, Song H Z, Cheng L H, Hui S X, Yin Q R 2009 Chin. Phys. Lett. 26 100701

    [4]

    Li S T, Yang Y, Zhang L, Cheng P F, Li J Y 2009 Chin. Phys. Lett. 26 077201

    [5]

    Zhao X T, Li J Y, Li H, Li S T 2012 Acta Phys. Sin. 61 153103 (in Chinese) [赵学童, 李建英, 李欢, 李盛涛 2012 物理学报 61 153103]

    [6]

    Wang Y P, Cheng P F 2010 Insulators and Surge Arresters 4 34 (in Chinese) [王玉平, 成鹏飞 2010 电瓷避雷器 4 34]

    [7]

    Gupta T K 1990 J. Am. Ceram. Soc. 73 1817

    [8]

    Li S T, Cheng P F, Wang Y P 2008 Insulators and Surge Arresters 4 16 (in Chinese) [李盛涛, 成鹏飞, 王玉平, 朱斌 2008 电瓷避雷器 4 16]

    [9]

    Yin G L, Li J Y, Yao G, Cheng P F, Li S T 2010 Acta Phys. Sin. 59 6345 (in Chinese) [尹桂来, 李建英, 尧广, 成鹏飞, 李盛涛 2010 物理学报 59 6345]

    [10]

    Chen J D, Liu Z Y 1982 Dielectric Physics (Beijing: Mechanical Industry Press) p151 (in Chinese) [陈季丹, 刘子玉 1982 电介质物理学 (北京: 机械工业出版社) 第151页]

    [11]

    Jonscher A K 1996 Universal Relaxation Law (London: Chelsea Dielectrics Press)

    [12]

    Tripathi R, Kumar A, Bharti C, Sinha T P 2010 Curr. Appl. Phys. 10 676

    [13]

    Roling B, Happe A, Funke K, Ingram M D 1997 Phys. Rev. Lett. 78 2160

    [14]

    Yin G L, Li J Y, Li S T 2009 Acta Phys. Sin. 58 4219 (in Chinese) [尹桂来, 李建英, 李盛涛2009 物理学报 58 4219]

    [15]

    Cheng P F, Li S T, Li J Y 2009 Acta Phys. Sin. 58 5721 (in Chinese) [成鹏飞, 李盛涛, 李建英 2009 物理学报 58 5721]

    [16]

    Cheng P, Li S, Zhang L, Li J 2008 Appl. Phys. Lett. 93 012902

    [17]

    Zhao X T, Li J Y, Li S T 2012 J. Appl. Phys. 111 124106

    [18]

    Greuter F 1995 Solid State Ionics 75 67

    [19]

    Li J Y, Li S T, Liu F Y, Alim M A 2006 J Mater Sci: Mater Electron 17 211

    [20]

    Sinclair D C, West A R 1989 J. Appl. Phys. 66 3850

  • [1] The Influence of the magentic annealing temperature on the microstructure and magnetic properties of NiCu alloy film. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20191942
    [2] Liu Ying-Guang, Bian Yong-Qing, Han Zhong-He. Heat transport behavior of bicrystal ZnO containing tilt grain boundary. Acta Physica Sinica, 2020, 69(3): 033101. doi: 10.7498/aps.69.20190627
    [3] Liu Xiang, Mi Wen-Bo. Structure, Magnetic and Transport Properties of Fe3O4 near Verwey Transition. Acta Physica Sinica, 2020, 69(4): 040505. doi: 10.7498/aps.69.20191763
    [4] Zhang Zheng-Wei, Wang Gui-Lin, Zhang Shao-Long, Sun Qi-Zhi, Liu Wei, Zhao Xiao-Ming, Jia Yue-Song, Xie Wei-Ping. Application of electrical action to design and analysis of magnetically driven solid liner implosion. Acta Physica Sinica, 2020, 69(5): 050701. doi: 10.7498/aps.69.20191690
    [5] Zuo Fu-Chang, Mei Zhi-Wu, Deng Lou-Lou, Shi Yong-Qiang, He Ying-Bo, Li Lian-Sheng, Zhou Hao, Xie Jun, Zhang Hai-Li, Sun Yan. Development and in-orbit performance evaluation of multi-layered nested grazing incidence optics. Acta Physica Sinica, 2020, 69(3): 030702. doi: 10.7498/aps.69.20191446
    [6] Preparing GaN nanowires on Al2O3 substrate without catalyst and its optical property research. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20191923
    [7] Liao Tian-Jun, Lü Yi-Xiang. Thermodynamic limit and optimal performance prediction of thermophotovoltaic energy conversion devices. Acta Physica Sinica, 2020, 69(5): 057202. doi: 10.7498/aps.69.20191835
    [8] Tribocorrosion performance of Nitrogen-doped diamond like carbon coating by high power impulse magnetron sputtering technique. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20200021
    [9] Zou Ping, Lv Dan, Xu Gui-Ying. Microstructure and thermoelectric property of (Bi1–xTbx)2(Te0.9Se0.1)3 fabricated by high pressure sintering technique. Acta Physica Sinica, 2020, 69(5): 057201. doi: 10.7498/aps.69.20191561
  • Citation:
Metrics
  • Abstract views:  832
  • PDF Downloads:  700
  • Cited By: 0
Publishing process
  • Received Date:  12 October 2012
  • Accepted Date:  22 November 2012
  • Published Online:  05 April 2013

The Effect of DC degradation and heat-treatment on defects in ZnO varistor

  • 1. State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 50977071, 51177121).

Abstract: In this research, DC degradation for ZnO varistors at 3.2 kV/cm and 50 mA/cm2 for 115 hours was performed, and its effect on electrical properties and defects of ZnO varistors was investigated. It was found that the breakdown field and nonlinear coefficient drops sharply from 2845 V/cm to 51.6 V/cm and 38.3 to 1.1, respectively, when the DC degradaion time reaches 115 hours. For the degraded sample, the dielectric loss was dominated by the increase of conductivity so that some defect relaxation peaks cannot be observed is the DC degraded ZnO varistors. However, in electrical modulus plot, one relaxation peak can be observed. The conductivity in low frequency range increases greatly and the conductance activation energy drops from 0.84 to 0.083 eV. Additionally, the heat-treatment process of ZnO varistors at 800 ℃ for 24 hours was also performed. It is interesting to note that the electrical properties and the relaxation processes of ZnO varistor is restorable completely again after heat-treatment. The breakdown field and the nonlinear coefficient increase to 3085 V/cm and 50.8, respectively, and the activation energy of conductance increases to 0.88 eV. It is also found that the defect relaxation peak, which is shown in dielectric spectra corresponding to oxygen vacancy defect, is suppressed evidently by heat-retreating. Therefore, it is proposed that oxygen is likely to diffuse into the ZnO grain boundaries at the heat-treatment process, which can play an important role in restorability of the DC degraded ZnO varistor.

Reference (20)

Catalog

    /

    返回文章
    返回