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Time of spin-polarized tunneling through a symmetric double-barrier quantum well structure

Wang Rui-Qin Gong Jian Wu Jian-Ying Chen Jun

Time of spin-polarized tunneling through a symmetric double-barrier quantum well structure

Wang Rui-Qin, Gong Jian, Wu Jian-Ying, Chen Jun
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  • Tunneling time is an important factor to describe quantum electronic device. In this paper, the dynamic problem of spin-dependent tunneling is investigated by solving the time-dependent Schrödinger equation. The transmission coefficient and tunneling lifetime are discussed by use of mixing transfer-matrix and Runge-Kutta method. The k3 Dresselhaus term is considered to correct the effective Hamiltonian of the system in our calculation. The results show that the transmission peak of the electrons with different spin orientations split obviously. The building time and the tunneling lifetime through the double-barrier structure of AlxGa1-xSb material are different for the spin-down electron and spin-up electron. These time-dependent properties depend on the electronic spin orientation. It can be considered as one of reasons for spin polarization to appear. Additionally, the steady spin-polarization emerges in the well due to the k3 Dresselhaus spin-orbit coupling.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 1084705) and the Inner Mongolia Talent Developing Foundation, China.
    [1]

    Žutić I, Fabian J, Sarma S D 2004 Rev. Mod. Phys. 76 323

    [2]

    Guo Y, Qin J H, Chen X Y, Gu B L 2003 Chin. Phys. Lett. 20 1124

    [3]

    Afzalian A, Colinge J P, Flandre D 2011 Solid-State Electron 59 50

    [4]

    Schmidt G, Ferrand D, Molenkamp L W, Filip A T, van Wees B J 2000 Phys. Rev. B 62 R4790

    [5]

    Voskoboynikov A, Lin S S, Lee C P 1998 Phys. Rev. B 58 15397

    [6]

    Perel V I, Tarasenko S A, Yassievich I N, Ganichev S D, Bel'kov V V, Prettl W 2003 Phys. Rev. B 67 201304

    [7]

    Voskoboynikov A, Lin S S, Lee C P, Tretyak O 2000 J. Appl. Phys. 87 387

    [8]

    Koga T, Nitta J, Takayanagi H, Datta S 2002 Phys. Rev. Lett. 88 126601

    [9]

    Glazov M M, Alekseev P S, Odnoblyidov M A, Chistyakov V M, Tarasenko S A, Yassievich I N 2005 Phys. Rev. B 71 155313

    [10]

    Wan F, Jalil M B A, Tan S G 2009 J. Appl. Phys. 105 07C704

    [11]

    Li W, Guo Y 2006 Phys. Rev. B 73 205311

    [12]

    Yu L, Voskoboynikov J 2005 J. Appl. Phys. 98 023716

    [13]

    Gong J, Liang X X, Ban S L 2007 J. Appl. Phys. 102 073718

    [14]

    Peter A J 2008 Phys. Lett. A 372 5239

    [15]

    Radovanovic G, Isic G, Milanovic V 2008 Opt. Mater. 30 1134

    [16]

    Sheng J S, Chang K 2006 Phys. Rev. B 74 235315

    [17]

    Dresselhaus G 1995 Phys. Rev. 100 580

    [18]

    Collins S, Lowe D, Barker J R 1987 J. Phys. C 20 6233

    [19]

    Guo H, Diff K, Neofotistos G, Gunton J D 1988 Appl. Phys. Lett. 53 131

    [20]

    Zhang J F, Gu B Y 1991 Phys. Rev. B 43 5028

    [21]

    Kim J U, Lee H H 1998 J. Appl. Phys. 84 907

    [22]

    Ban S L, Hasbun J E, Liang X X 2000 Acta Scientiarum Naturalium Universitatis NeiMongol 31 25 (in Chinese) [班士良, Hasbun J E, 梁希侠 2000 内蒙古大学学报(自然科学版) 31 25]

    [23]

    Wang L G, Yang W, Chang K, Chan K S 2005 Phys. Rev. B 72 153314

    [24]

    BenDaniel D J, Duke C B 1996 Phys. Rev. B 152 683

    [25]

    Gong J 2005 Ph. D. Dissertation (Hohhot:Inner Mongolia University) (in Chinese) [宫箭 2005 博士学位论文(呼和浩特:内蒙古大学)]

  • [1]

    Žutić I, Fabian J, Sarma S D 2004 Rev. Mod. Phys. 76 323

    [2]

    Guo Y, Qin J H, Chen X Y, Gu B L 2003 Chin. Phys. Lett. 20 1124

    [3]

    Afzalian A, Colinge J P, Flandre D 2011 Solid-State Electron 59 50

    [4]

    Schmidt G, Ferrand D, Molenkamp L W, Filip A T, van Wees B J 2000 Phys. Rev. B 62 R4790

    [5]

    Voskoboynikov A, Lin S S, Lee C P 1998 Phys. Rev. B 58 15397

    [6]

    Perel V I, Tarasenko S A, Yassievich I N, Ganichev S D, Bel'kov V V, Prettl W 2003 Phys. Rev. B 67 201304

    [7]

    Voskoboynikov A, Lin S S, Lee C P, Tretyak O 2000 J. Appl. Phys. 87 387

    [8]

    Koga T, Nitta J, Takayanagi H, Datta S 2002 Phys. Rev. Lett. 88 126601

    [9]

    Glazov M M, Alekseev P S, Odnoblyidov M A, Chistyakov V M, Tarasenko S A, Yassievich I N 2005 Phys. Rev. B 71 155313

    [10]

    Wan F, Jalil M B A, Tan S G 2009 J. Appl. Phys. 105 07C704

    [11]

    Li W, Guo Y 2006 Phys. Rev. B 73 205311

    [12]

    Yu L, Voskoboynikov J 2005 J. Appl. Phys. 98 023716

    [13]

    Gong J, Liang X X, Ban S L 2007 J. Appl. Phys. 102 073718

    [14]

    Peter A J 2008 Phys. Lett. A 372 5239

    [15]

    Radovanovic G, Isic G, Milanovic V 2008 Opt. Mater. 30 1134

    [16]

    Sheng J S, Chang K 2006 Phys. Rev. B 74 235315

    [17]

    Dresselhaus G 1995 Phys. Rev. 100 580

    [18]

    Collins S, Lowe D, Barker J R 1987 J. Phys. C 20 6233

    [19]

    Guo H, Diff K, Neofotistos G, Gunton J D 1988 Appl. Phys. Lett. 53 131

    [20]

    Zhang J F, Gu B Y 1991 Phys. Rev. B 43 5028

    [21]

    Kim J U, Lee H H 1998 J. Appl. Phys. 84 907

    [22]

    Ban S L, Hasbun J E, Liang X X 2000 Acta Scientiarum Naturalium Universitatis NeiMongol 31 25 (in Chinese) [班士良, Hasbun J E, 梁希侠 2000 内蒙古大学学报(自然科学版) 31 25]

    [23]

    Wang L G, Yang W, Chang K, Chan K S 2005 Phys. Rev. B 72 153314

    [24]

    BenDaniel D J, Duke C B 1996 Phys. Rev. B 152 683

    [25]

    Gong J 2005 Ph. D. Dissertation (Hohhot:Inner Mongolia University) (in Chinese) [宫箭 2005 博士学位论文(呼和浩特:内蒙古大学)]

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  • Received Date:  08 November 2012
  • Accepted Date:  13 December 2012
  • Published Online:  20 April 2013

Time of spin-polarized tunneling through a symmetric double-barrier quantum well structure

  • 1. School of Physics Sciences and Technology, Inner Mongolia University, Hohhot 010021, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 1084705) and the Inner Mongolia Talent Developing Foundation, China.

Abstract: Tunneling time is an important factor to describe quantum electronic device. In this paper, the dynamic problem of spin-dependent tunneling is investigated by solving the time-dependent Schrödinger equation. The transmission coefficient and tunneling lifetime are discussed by use of mixing transfer-matrix and Runge-Kutta method. The k3 Dresselhaus term is considered to correct the effective Hamiltonian of the system in our calculation. The results show that the transmission peak of the electrons with different spin orientations split obviously. The building time and the tunneling lifetime through the double-barrier structure of AlxGa1-xSb material are different for the spin-down electron and spin-up electron. These time-dependent properties depend on the electronic spin orientation. It can be considered as one of reasons for spin polarization to appear. Additionally, the steady spin-polarization emerges in the well due to the k3 Dresselhaus spin-orbit coupling.

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