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White light emitting diode based on quantum dots and MEH-PPV

Sun Li-Zhi Zhao Su-Ling Xu Zheng Yin Hui-Li Zhang Cheng-Wen Long Zhi-Juan Hong Xiao-Xia Wang Peng Xu Xu-Rong

White light emitting diode based on quantum dots and MEH-PPV

Sun Li-Zhi, Zhao Su-Ling, Xu Zheng, Yin Hui-Li, Zhang Cheng-Wen, Long Zhi-Juan, Hong Xiao-Xia, Wang Peng, Xu Xu-Rong
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  • The white light emitting diode (LED) devices, in which blue-emitting quantum dots doped in the polymer of poly [2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylene vinylene] (MEH-PPV) serve as the active layer, have been fabricated in a nitrogen-filled glove box; the devices have the structure of ITO/PEDOT/MEH-PPV:QDs(B)/LiF/Al. After a systematical investigation, we report the effect of different quantum dots (QDs) doping concentration (mass fraction) on the electroluminescent spectrum, current density, brightness, CIE coordinates of the devices and atomic force microscopy (AFM) characterizations of the emitting layer. With the increase of QDs doping concentration, we find that the QDs luminance intensity of the controlling devices continues to grow. When the QDs doping concentration is 40%, the normal white light emission is obtained in the devices. The CIE coordinates of the white QD-LED are (0.35, 0.32), which are close to the balanced white coordinates. Besides, we also fabricate the non-doped devices, in which the structure is ITO/PEDOT/MEH-PPV/QDs(B)/LiF/Al. After finishing the active layer's preparation, the morphology of the films are investigated by AFM. By comparing the analysis, the doped system has a lower level on the root mean squared roughness. In addition, the doped devices demonstrate a superior performance, and exhibit a low turn-on voltage and a high maximum value of luminance.
      Corresponding author: Zhao Su-Ling, slzhao@bjtu.edu.cn
    • Funds: Project supported by the National High Technology Research and Development Program of China (Grant No. 2013AA032205), the National Natural Science Foundation of China (Grant Nos. 11474018, 51272022, 61575019), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20120009130005, 20130009130001), and the Technological Development Contract (csot) (Grant No. HETONG-150188-04E008).
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  • [1]

    Steckel J S, Snee P, Coe-Sullivan S, Zimmer J P, Halpert J E, Anikeeva P, Kim L A, Bulovic V, Bawendi M G 2006 Angew. Chem. Int. Ed. 45 5796

    [2]

    Steckel J S, Zimmer J P, Coe-Sullivan S, Stott N E, Bulovic V, Bawendi M G 2004 Angew. Chem. Int. Ed. 43 2154

    [3]

    O'Connor E, O'Riordan A, Doyle H, Moynihan S, Cuddihy A, Redmond G 2005 Appl. Phys. Lett. 86 201114

    [4]

    Bakueva L, Musikhin S, Hines M A, Chang T W F, Tzolov M, Scholes G D, Sargent E H 2003 Appl. Phys. Lett. 82 2895

    [5]

    Lee J I, Ha K S, Yoo H S 2008 Acta Biomater. 4 791

    [6]

    Sun Q J, Wang Y A, Li L S, Wang D Y, Zhu T, Xu J, Yang C H, Li Y F 2007 Nature Photon. 1 717

    [7]

    Clapp A R, Medintz I L, Mauro J M, Fisher B R, Bawendi M G, Mattoussi H 2004 J. Am. Chem. Soc. 126 301

    [8]

    He Y D, Xu Z, Zhao S L, Liu Z M, Gao S, Xu X R 2014 Acta Phys. Sin. 63 177301 (in Chinese) [何月娣, 徐征, 赵谡玲, 刘志民, 高松, 徐叙瑢 2014 物理学报 63 177301]

    [9]

    Kim H H, Park S, Yi Y, Son D I, Park C, Hwang do K, Choi W K 2015 Sci. Reports 5 8968

    [10]

    Pust P, Schmidt P J, Schnick W 2015 Nature Mater. 14 454

    [11]

    Dai X L, Zhang Z X, Jin Y Z, Niu Y, Cao H J, Liang X Y, Chen L W, Wang J P, Peng X G 2014 Nature 515 96

    [12]

    Lee K H, Han C Y, Kang H D, Ko H, Lee C, Lee J, Myoung N, Yim S Y, Yang H 2015 ACS Nano 9 10941

    [13]

    Qi D F, Fischbein M, Drndić M, elmić S 2005 Appl. Phys. Lett. 86 093103

    [14]

    Yang X Y, Divayana Y, Zhao D W, Leck K S, Lu F, Tan S T, Abiyasa A P, Zhao Y B, Demir H V, Sun X W 2012 Appl. Phys. Lett. 101 233110

    [15]

    Breeze A J, Schlesinger Z, Carter S A, Brock P J 2001 Phys. Rev. B 64 125205

    [16]

    Anikeeva P O, Halpert J E, Bawendi M G, Bulovic V 2009 Nano Lett. 9 2532

    [17]

    Wu C C, Wu C I, Sturm J C, Kahn A 1997 Appl. Phys. Lett. 70 1348

    [18]

    Chen W B, Xu Z X, Li K, Chui S S Y, Roy V A L, Lai P T, Che C M 2012 Chin. Phys. B 21 078401

    [19]

    Liu Z M, Zhao S L, Xu Z, Gao S, Yang Y F 2014 Acta Phys. Sin. 63 097302 (in Chinese) [刘志民, 赵谡玲, 徐征, 高松, 杨一帆 2014 物理学报 63 097302]

    [20]

    Yin Y H, Deng Z B, Lun J C, L Z Y, Du H L, Wang Y S 2012 Chin. J. Lumin. 33 171 (in Chinese) [殷月红, 邓振波, 伦建超, 吕昭月, 杜海亮, 王永生 2012 发光学报 33 171]

    [21]

    Lee T W, Park O O, Kim J, Kim Y C 2002 Chem. Mater. 14 4281

    [22]

    Cho K S, Lee E K, Joo W J, Jang E, Kim T H, Lee S J, Kwon S J, Han J Y, Kim B K, Choi B L, Kim J M 2009 Nature Photon. 3 341

    [23]

    Fang Z D, Gong Z, Miao Z H, Xu X H, Ni H Q, Niu Z C 2003 Chin. Phys. Lett. 20 2061

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  • Received Date:  16 November 2015
  • Accepted Date:  22 December 2015
  • Published Online:  20 March 2016

White light emitting diode based on quantum dots and MEH-PPV

    Corresponding author: Zhao Su-Ling, slzhao@bjtu.edu.cn
  • 1. Institute of Optoelectronics Technology, Beijing Jiaotong University, Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China
Fund Project:  Project supported by the National High Technology Research and Development Program of China (Grant No. 2013AA032205), the National Natural Science Foundation of China (Grant Nos. 11474018, 51272022, 61575019), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20120009130005, 20130009130001), and the Technological Development Contract (csot) (Grant No. HETONG-150188-04E008).

Abstract: The white light emitting diode (LED) devices, in which blue-emitting quantum dots doped in the polymer of poly [2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylene vinylene] (MEH-PPV) serve as the active layer, have been fabricated in a nitrogen-filled glove box; the devices have the structure of ITO/PEDOT/MEH-PPV:QDs(B)/LiF/Al. After a systematical investigation, we report the effect of different quantum dots (QDs) doping concentration (mass fraction) on the electroluminescent spectrum, current density, brightness, CIE coordinates of the devices and atomic force microscopy (AFM) characterizations of the emitting layer. With the increase of QDs doping concentration, we find that the QDs luminance intensity of the controlling devices continues to grow. When the QDs doping concentration is 40%, the normal white light emission is obtained in the devices. The CIE coordinates of the white QD-LED are (0.35, 0.32), which are close to the balanced white coordinates. Besides, we also fabricate the non-doped devices, in which the structure is ITO/PEDOT/MEH-PPV/QDs(B)/LiF/Al. After finishing the active layer's preparation, the morphology of the films are investigated by AFM. By comparing the analysis, the doped system has a lower level on the root mean squared roughness. In addition, the doped devices demonstrate a superior performance, and exhibit a low turn-on voltage and a high maximum value of luminance.

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