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THE STEP-RELATED ELECTRONIC STATES ON THE VICINAL SURFACES OF Si(001)

W. RANKE CHEN XIAO-HUA XU YA-BO LI HAI-YANG JI ZHEN-GUO

THE STEP-RELATED ELECTRONIC STATES ON THE VICINAL SURFACES OF Si(001)

W. RANKE, CHEN XIAO-HUA, XU YA-BO, LI HAI-YANG, JI ZHEN-GUO
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  • Received Date:  18 June 1986
  • Published Online:  18 March 2005

THE STEP-RELATED ELECTRONIC STATES ON THE VICINAL SURFACES OF Si(001)

  • 1. (1)Fritz-Haber-Institut der MPG,F. R. G.; (2)浙江大学物理系; (3)浙江大学中心实验室

Abstract: Angle-resolved ultraviolet photoelectron spectroscopy has been used to investigate the step-related electronic states on the vicinal surfaces of Si(00l). Such states have been found at 0.5-0.6 eV below EF at Γ point (K = 0) for vicinal surfaces with steps along 〈100〉 or 〈110〉. The dispersion of these states is smaller than that of the (001) surface states.

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