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POPULATION INVERSION OF ENERGY LEVELS OF MgXI 1s3p AND 1s4p UNDER THE CONDITION OF AVERAGE HIGH TEMPERATURE AND HIGH ELECTRON DENSITY

WANG GUAN-ZHI LIN ZUN-QI CHEN WEN-HUA YU WEN-YAN TAN WEI-HAN ZHENG YU-XIA GU MIN ZHANG HUI-HUANG CHENG RUI-HUA CUI JI-XIU DENG XI-MING

POPULATION INVERSION OF ENERGY LEVELS OF MgXI 1s3p AND 1s4p UNDER THE CONDITION OF AVERAGE HIGH TEMPERATURE AND HIGH ELECTRON DENSITY

WANG GUAN-ZHI, LIN ZUN-QI, CHEN WEN-HUA, YU WEN-YAN, TAN WEI-HAN, ZHENG YU-XIA, GU MIN, ZHANG HUI-HUANG, CHENG RUI-HUA, CUI JI-XIU, DENG XI-MING
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  • Received Date:  14 September 1987
  • Published Online:  06 July 2005

POPULATION INVERSION OF ENERGY LEVELS OF MgXI 1s3p AND 1s4p UNDER THE CONDITION OF AVERAGE HIGH TEMPERATURE AND HIGH ELECTRON DENSITY

  • 1. (1)长春光学精密机械学院,毕业实习生; (2)中国科学院上海光学精密机械研究所

Abstract: The microtube target with side jet burner is designed. Strong population inversion is observed along the whole side jet burner between the energy leveles of MgXI Is3p 1P00 and Is4p 1P00 while the average laser irradiance reached about 3.5×1013W·cm-2 on the inner wall of the microtube targets. The corresponding environment average electron temperature 470-520 eV and density of 2×10cm-3 of plasma at the inversion area is measured. The possible mechanisms of population inversion under the average high temperature condition has been analysed.

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