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THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H

WANG ZHI-CHAO TENG MIN-KANG ZHANG SHU-YI GE WANG-DA QIU SHU-YE

THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H

WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE
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BY GOOGLE TRANSLATE IF NEEDED.)

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  • Received Date:  07 September 1987
  • Published Online:  06 July 2005

THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H

  • 1. (1)南京大学物理系声学研究所; (2)南京无线电元件十七厂; (3)汕头大学物理系

Abstract: The defects and the nonradiative recombination of photogenerated carriers in a-Si:H and a-SiNx:H films are studied by using infrared spectrometer, spectrophotometer, photoacoustic Spectrometer and positron annihilation life-time spectrometer from various respects.

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