Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

FOURIER TRANSFORM PHOTOTHERMAL IONIZATION SPEC-TROSCOPY OF SHALLOW IMPURITIES IN SEMICONDUCTORS

YU ZHI-YI HUANG YE-XIAO CHEN JIAN-XIANG YE HONG-JUAN SHEN XUE-CHU E. E. HALLER

FOURIER TRANSFORM PHOTOTHERMAL IONIZATION SPEC-TROSCOPY OF SHALLOW IMPURITIES IN SEMICONDUCTORS

YU ZHI-YI, HUANG YE-XIAO, CHEN JIAN-XIANG, YE HONG-JUAN, SHEN XUE-CHU, E. E. HALLER
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  2417
  • PDF Downloads:  986
  • Cited By: 0
Publishing process
  • Received Date:  15 January 1989
  • Published Online:  08 July 2005

FOURIER TRANSFORM PHOTOTHERMAL IONIZATION SPEC-TROSCOPY OF SHALLOW IMPURITIES IN SEMICONDUCTORS

  • 1. 中国科学院上海技术物理研究所红外物理开放研究实验室

Abstract: We report the experimental set-up and measurement system combining with a fast-scan Fourier transform spectrometer for photothermal ionization spectroscopy. They have been successfully applied for the investigation and detection of residual shallow impurity centers in ultra-pure germanium and silicon single crystals with high resolution as well as high sensitivity. Boron acceptor at a concentration of the order of magnitude of 108 cm-3 has been detected in ultra-pure germanium, and the detection limit of at least 107 cm-3 has been demonstrated. Lithiumoxygen donor complex D(Li, O) has been revealed in n-type highpurity silicon. Transition line series of both boron acceptor and phosphorus donor in p-type high-purity silicon have been observed simultaneously with the excitation of intrinsic light. In addition, the transitions associated with higher excited states of shallow impurities in both germanium and silicon have also been observed.

Catalog

    /

    返回文章
    返回