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STUDY ON THE SURFACE PROPERTIES OF AlxGa1-xAs(100)

HUANG CHUN-HUI LU XUE-KUN DING XUN-MIN

STUDY ON THE SURFACE PROPERTIES OF AlxGa1-xAs(100)

HUANG CHUN-HUI, LU XUE-KUN, DING XUN-MIN
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  • Received Date:  27 January 1989
  • Published Online:  08 July 2005

STUDY ON THE SURFACE PROPERTIES OF AlxGa1-xAs(100)

  • 1. 复旦大学表面物理实验室

Abstract: The surface states of Al0.7Ga0.3 As(l00) were studied by ultraviolet photoelecton spectro-scopy. It was found that there exist two surface states on Al0.7Ga0.3 As (100) surface, which could be removed by the adsorption of 1500 L hydrogen. The evolution of these two surface states with thermal annealing was investigated. Combining with the experimental results of LEED and XPS, it was recognized that the damage of surface could be removed effectively by a thermal annealing at a temperature near 450℃, and a nearly perfect surface of A10.7Ga0.3 As(l00) could be obtained.

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