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SURFACE STATES OF GaP(111) SURFACE STUDIED BY ARUPS AND HREELS

LU XUE-KUN DONG GUO-SHENG

SURFACE STATES OF GaP(111) SURFACE STUDIED BY ARUPS AND HREELS

LU XUE-KUN, DONG GUO-SHENG
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  • Received Date:  01 February 1989
  • Published Online:  08 July 2005

SURFACE STATES OF GaP(111) SURFACE STUDIED BY ARUPS AND HREELS

  • 1. 复旦大学表面物理实验室

Abstract: Angle resolved ultra-violet photoelectron spectroscopy( ARUPS) and high resolution electron energy loss spectroscopy (HREELS) are used to investigate the surface states of GaP (111) surf aces prepared by ion bombardment and annealing. It is found that the intrinsic occupied surface states related to P atom dangling bonds are located at 0.6 eV below the valence band maximum, while the defect induced empty surface states are located at 1.1 eV above the valence band maximum (Γ point). A 1.36 eV band bending in surface region is induced by these empty surface states.

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