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The tunnel conductance and tunnel magnetic resistance of NM/FI/NI/FI/NM double spin filter junction

Zhu Lin Chen Wei-Dong Xie Zheng-Wei Li Bo-Zang

The tunnel conductance and tunnel magnetic resistance of NM/FI/NI/FI/NM double spin filter junction

Zhu Lin, Chen Wei-Dong, Xie Zheng-Wei, Li Bo-Zang
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Publishing process
  • Received Date:  22 February 2006
  • Accepted Date:  27 March 2006
  • Published Online:  01 October 2006

The tunnel conductance and tunnel magnetic resistance of NM/FI/NI/FI/NM double spin filter junction

  • 1. (1)四川师范大学物理系与电子工程学院,成都 610066; (2)四川师范大学物理系与电子工程学院,成都 610066;中国科学院物理研究所,北京 100080

Abstract: Based on the NM/FI/FI/NM double spin filter junction (NM represents the nonmagnetic metal layer and FI the ferromagnetic insulator or semiconductor layer), a new type of double spin filter junction NM/FI/NI/FI/NM (NI represents the nonmagnetic insulator layer) is discussed. By inserting an nonmagnetic insulator layer between the ferromagnetic insulator layers, the adverse influence on the tunneling magnetic resistance (TMR) caused by the magnetic coupling at the interface between the ferromagnetic insulator (FI) layers can be avoided. Using the free-electron approximation and transfer matrix method the dependence of the tunneling conductance and TMR on the thickness of the FI layer and the NI layer and on the bias voltage in the double spin filter junction NM/FI/NI/FI/NM are studied.

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