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Effects of total ionizing dose on narrow-channel SOI NMOSFETs

Ning Bing-Xu Hu Zhi-Yuan Zhang Zheng-Xuan Bi Da-Wei Huang Hui-Xiang Dai Ruo-Fan Zhang Yan-Wei Zou Shi-Chang

Effects of total ionizing dose on narrow-channel SOI NMOSFETs

Ning Bing-Xu, Hu Zhi-Yuan, Zhang Zheng-Xuan, Bi Da-Wei, Huang Hui-Xiang, Dai Ruo-Fan, Zhang Yan-Wei, Zou Shi-Chang
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  • Received Date:  10 October 2012
  • Accepted Date:  29 October 2012
  • Published Online:  05 April 2013

Effects of total ionizing dose on narrow-channel SOI NMOSFETs

  • 1. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, the Chinese Academy of Sciences, Shanghai 200050, China;
  • 2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

Abstract: The effects of total ionizing dose on narrow-channel N-type metal-oxide-semiconductor field-effect-transistors (NMOSFETs) in a 130 nm partially depleted silicon-on-insulator (SOI) technology are presented. The charge conservation principle is utilized to analyze the radiation-induced narrow-channel effect (RINCE). In addition, it is found for the first time, as for as we know that for the narrow-channel NMOSFETs operated in the linear region, the radiation-induced positive charges trapped in the shallow trench isolation can increase the probability of electron-electron collisions and surface roughness scattering, resulting in the degradation of the carrier mobility and transconductance of the main transistor. Finally, the RINCE as well as the degradation of the carrier mobility has been verified by our three-dimensional device simulation; and good agreement between the simulation and experimental results is obtained.

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