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Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method

Wang Chen Xu Yi-Hong Li Cheng Lin Hai-Jun Zhao Ming-Jie

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Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method

Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun, Zhao Ming-Jie
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  • Abstract views:  12724
  • PDF Downloads:  57
  • Cited By: 0
Publishing process
  • Received Date:  08 May 2019
  • Accepted Date:  10 June 2019
  • Available Online:  01 September 2019
  • Published Online:  05 September 2019

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