Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

FTIR study an VO2 defect in fast neutron irradiated Czochralski silicon

Yang Shuai Li Yang-Xian Ma Qiao-Yun Xu Xue-Wen Niu Ping-Juan Li Yong-Zhang Niu Sheng-Li Li Hong-Tao

FTIR study an VO2 defect in fast neutron irradiated Czochralski silicon

Yang Shuai, Li Yang-Xian, Ma Qiao-Yun, Xu Xue-Wen, Niu Ping-Juan, Li Yong-Zhang, Niu Sheng-Li, Li Hong-Tao
PDF
Get Citation
Metrics
  • Abstract views:  2759
  • PDF Downloads:  669
  • Cited By: 0
Publishing process
  • Received Date:  18 October 2004
  • Published Online:  10 May 2005

FTIR study an VO2 defect in fast neutron irradiated Czochralski silicon

  • 1. (1)河北工业大学材料科学与工程学院,天津 300130; (2)天津工业大学信息与通信学院,天津 300160; (3)中国原子能科学研究院,北京 102413

Abstract: The vacancy_dioxygen complex(VO2) is one of the main defects formed i n fast neutron irradiated CZ_Si during annealing in the temperature range 400—500℃. In this defect,two oxygen atoms share a vacancy,each of which is bonded to two s ilicon neighbors.With the increase of the 889cm-1(VO2),two infrared absorption bands at 919.6 and 1006cm-1 will arise in neutron irradia ted CZ _Si after annealed in the temperature range 300—500℃.IR vibrational bands at 9 19.6 and 1006cm-1 can be assigned to the metastable defect (O-V-O)th at is composed of a VO(A center) and a neighboring interstitial oxygen(Oi)atom.By prolonging the annealing time from 2h up to 10h or increasing the annealing temperature,the metastable defect(O-V-O)will be converted into V O2.During annealing in the temperature range 400—500℃,the main defe cts for med in the high dose(1019) neutron irradiated CZ_Si is the multi_vac ancy type of defects and the formation of the VO2 will be depressed.

Catalog

    /

    返回文章
    返回