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Anisotropic magnetoresistance effect in spin valve multilayers

Jiang Hong-Wei Wang Ai-Ling Zheng Wu

Anisotropic magnetoresistance effect in spin valve multilayers

Jiang Hong-Wei, Wang Ai-Ling, Zheng Wu
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  • Abstract views:  2831
  • PDF Downloads:  904
  • Cited By: 0
Publishing process
  • Received Date:  21 July 2004
  • Accepted Date:  12 October 2004
  • Published Online:  10 May 2005

Anisotropic magnetoresistance effect in spin valve multilayers

  • 1. 首都师范大学物理系,北京 100037

Abstract: Planar Hall effect(PHE) in Ta(8nm)/NiFe(7nm)/Cu(2.4nm)/NiFe(4.4nm)/FeMn(14nm)/Ta(6nm) spin valve multilayer have been measured in magnetic fields rotating in the film plane. A “mixed” effect of the free and pinned layers on anisotropic magnetoresistance (AMR) has been obtserved. The result shows that the PHE can give more information about the magnetic configurations of the spin valve multilayers than the usual MR measurements.

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