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Simulation of step response of silane low-temperature pasma(1)

Yang Jing Li Jing-Zhen Sun Xiu-Quan Gong Xiang-Dong

Simulation of step response of silane low-temperature pasma(1)

Yang Jing, Li Jing-Zhen, Sun Xiu-Quan, Gong Xiang-Dong
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  • PDF Downloads:  467
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  • Received Date:  31 May 2004
  • Accepted Date:  18 November 2004
  • Published Online:  07 July 2005

Simulation of step response of silane low-temperature pasma(1)

  • 1. 深圳大学工程技术学院,深圳 518060

Abstract: Understanding of the transient response of electronegative radio-frequency glow plasmas is important for process control, better selectivity etch technology and charge free etching. We have investigated the step responses of RF(1356MHz) silane gas plasmas at a pressure of 05 Torr(05×10333Pa). The result showed that, when the power voltage changed stepwise from 550V to 350V, a steady sta te pulsed plasma oscillation at a few kHz appeared. The transient behavior and o scillation were interpreted in terms of the transport and chemistry of charge ca rriers in the plasma.

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