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Effects of Ta buffer layers on the ordering of equiatomic FePt thin films

Meng Fan-Bin Li Yang-Xian Zhang Li-Jiao Cai Jian-Wang

Effects of Ta buffer layers on the ordering of equiatomic FePt thin films

Meng Fan-Bin, Li Yang-Xian, Zhang Li-Jiao, Cai Jian-Wang
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  • Received Date:  10 March 2005
  • Accepted Date:  13 May 2005
  • Published Online:  20 January 2006

Effects of Ta buffer layers on the ordering of equiatomic FePt thin films

  • 1. (1)河北工业大学材料学院,天津 300130; (2)中国科学院物理研究所磁学国家重点实验室,北京 100080

Abstract: The magnetic and microstructural properties of Ta/FePt/C thin films after annealing at various temperatures have been investigated. The results indicate that for a very thin Ta buffer with amorphous structure and relatively large roughness, defects and grain boundaries of high density are formed in the FePt film grown on it, which effectively lowers the energy barrier of the ordering with Ta interdiffusion into the grain boundaries of the FePt film during the annealing process. The formation of the L10 phase of FePt thin films is thus greatly promoted with the ordering temperature of FePt significantly reduced by introducing a thin Ta buffer layer. On the other hand, when Ta layer is relatively thick, its roughness accordingly reduces, and most of the interfacial Ta atoms are finally bounded with the advent of the crystalline structure of the Ta buffer. Therefore, Ta buffer layer at this thickness range has little effect on the ordering of FePt films.

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