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The research on metal induced crystallization with chemical source

Zhao Shu-Yun Wu Chun-Ya Li Juan Liu Jian-Ping Zhang Xiao-Dan Zhang Li-Zhu Meng Zhi-Guo Xiong Shao-Zhen

The research on metal induced crystallization with chemical source

Zhao Shu-Yun, Wu Chun-Ya, Li Juan, Liu Jian-Ping, Zhang Xiao-Dan, Zhang Li-Zhu, Meng Zhi-Guo, Xiong Shao-Zhen
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  • Received Date:  06 January 2005
  • Accepted Date:  23 June 2005
  • Published Online:  15 February 2006

The research on metal induced crystallization with chemical source

  • 1. 南开大学光电子器件与技术研究所,天津 300071;天津市光电子薄膜器件与技术重点实验室,天津 300071;教育部光电信息技术科学重点实验室,天津 300071

Abstract: The metal induced crystallization with chemical source on different silicon based films is studied. All amorphous silicon films deposited by LPCVD, RF-PECVD and VHF-PECVD have been crystallized. However, the a-Si films prepared by VHF-PECVD seems to have crystallized better. The crystallization was also affected by the concentration of the chemical solution. Under a certain conditions, the polycrystalline silicon crystallized with the solution of 10000ppm has larger grain size than that with 5000ppm solution. The annealing atmosphere also affects the crystallization process. Compared with the physical inducing source, the chemical inducing source gives different micro-crystallization structures. For the metal induced crystallization, the chemical source tends to be more advantageous.

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